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Results: 1-10 |
Results: 10
ARTIFICIAL SUBSTRATES FOR N-TYPE AND P-TYPE SIGE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
Authors: HACKBARTH T KIBBEL H GLUECK M HOECK G HERZOG HJ
Citation: T. Hackbarth et al., ARTIFICIAL SUBSTRATES FOR N-TYPE AND P-TYPE SIGE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, Thin solid films, 321, 1998, pp. 136-140
HIGH-PERFORMANCE 0.25-MU-M P-TYPE GE SIGE MODFETS/
Authors: HOCK G HACKBARTH T ERBEN U KOHN E KONIG U
Citation: G. Hock et al., HIGH-PERFORMANCE 0.25-MU-M P-TYPE GE SIGE MODFETS/, Electronics Letters, 34(19), 1998, pp. 1888-1889
HIGH F(MAX) N-TYPE SI SIGE MODFETS
Authors: GLUCK M HACKBARTH T KONIG U HAAS A HOCK G KOHN E
Citation: M. Gluck et al., HIGH F(MAX) N-TYPE SI SIGE MODFETS, Electronics Letters, 33(4), 1997, pp. 335-337
MICROWAVE PERFORMANCE OF INP-BASED HEMTS FOR LOW-VOLTAGE APPLICATION
Authors: STRAHLE S HENLE B LEE L KUNZEL H HACKBARTH T DICKMANN J KOHN E
Citation: S. Strahle et al., MICROWAVE PERFORMANCE OF INP-BASED HEMTS FOR LOW-VOLTAGE APPLICATION, Microwave and optical technology letters, 11(3), 1996, pp. 131-135
IMPACT OF PROXIMITY CORRECTION ON DEVICE YIELD IN ELECTRON-BEAM DEFINITION OF MSM-DETECTORS
Authors: MAILE BE HACKBARTH T WAAS T
Citation: Be. Maile et al., IMPACT OF PROXIMITY CORRECTION ON DEVICE YIELD IN ELECTRON-BEAM DEFINITION OF MSM-DETECTORS, Microelectronic engineering, 30(1-4), 1996, pp. 35-40
PLANAR PROTON-IMPLANTED VCSELS AND FIBER-COUPLED 2-D VCSEL ARRAYS
Authors: ZEEB E MOLLER B REINER G RIES M HACKBARTH T EBELING KJ
Citation: E. Zeeb et al., PLANAR PROTON-IMPLANTED VCSELS AND FIBER-COUPLED 2-D VCSEL ARRAYS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 616-623
A CLOSED UHV FOCUSED ION-BEAM PATTERNING AND MBE REGROWTH TECHNIQUE
Authors: MUESSIG H HACKBARTH T BRUGGER H ORTH A REITHMAIER JP FORCHEL A
Citation: H. Muessig et al., A CLOSED UHV FOCUSED ION-BEAM PATTERNING AND MBE REGROWTH TECHNIQUE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 208-213
HIGH-SPEED PERFORMANCE OF 2-D VERTICAL-CAVITY LASER-DIODE ARRAYS
Authors: MOLLER B ZEEB E HACKBARTH T EBELING KJ
Citation: B. Moller et al., HIGH-SPEED PERFORMANCE OF 2-D VERTICAL-CAVITY LASER-DIODE ARRAYS, IEEE photonics technology letters, 6(9), 1994, pp. 1056-1058
LINEWIDTH ENHANCEMENT FACTOR OF VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES
Authors: MOLLER B ZEEB E FIEDLER U HACKBARTH T EBELING KJ
Citation: B. Moller et al., LINEWIDTH ENHANCEMENT FACTOR OF VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES, IEEE photonics technology letters, 6(8), 1994, pp. 921-923
GROWTH OF INALGAAS MULTILAYER STRUCTURES FOR HIGH-POWER AND SUBMILLIAMP VERTICAL-CAVITY LASERS
Authors: PANZLAFF K HACKBARTH T ZEEB E WIPIEJEWSKI T EBELING KJ
Citation: K. Panzlaff et al., GROWTH OF INALGAAS MULTILAYER STRUCTURES FOR HIGH-POWER AND SUBMILLIAMP VERTICAL-CAVITY LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 228-231
Risultati: 1-10 |