AAAAAA
Results:
1-13
|
Results: 13
Authors:
CHOW DH
HAFIZI M
STANCHINA WE
ROTH JA
ZINCK JJ
DUBRAY JJ
DUNLAP HL
Citation: Dh. Chow et al., MONOLITHIC INTEGRATION OF RESONANT-TUNNELING DIODES AND HETEROJUNCTION BIPOLAR-TRANSISTORS ON PATTERNED INP SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1413-1416
Authors:
HAFIZI M
Citation: M. Hafizi, NEW SUBMICRON HBT IC TECHNOLOGY DEMONSTRATES ULTRA-FAST, LOW-POWER INTEGRATED-CIRCUITS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1862-1868
Authors:
HAFIZI M
Citation: M. Hafizi, SUBMICRON, FULLY SELF-ALIGNED HBT WITH AN EMITTER GEOMETRY OF 0.3-MU-M, IEEE electron device letters, 18(7), 1997, pp. 358-360
Authors:
NEVIANI A
MENEGHESSO G
ZANONI E
HAFIZI M
CANALI C
Citation: A. Neviani et al., POSITIVE TEMPERATURE-DEPENDENCE OF THE ELECTRON-IMPACT IONIZATION COEFFICIENT IN IN0.53GA0.47AS INP HBTS/, IEEE electron device letters, 18(12), 1997, pp. 619-621
Authors:
HAFIZI M
Citation: M. Hafizi, HBT IC MANUFACTURABILITY AND RELIABILITY, Solid-state electronics, 41(10), 1997, pp. 1591-1598
Authors:
HAFIZI M
Citation: M. Hafizi, HIGH-FREQUENCY LOW-POWER ICS IN A SCALED SUBMICROMETER HBT TECHNOLOGY, IEEE transactions on microwave theory and techniques, 45(12), 1997, pp. 2549-2554
Authors:
HAFIZI M
STANCHINA WE
WILLIAMS F
JENSEN JF
Citation: M. Hafizi et al., RELIABILITY OF INP-BASED HBT IC TECHNOLOGY FOR HIGH-SPEED, LOW-POWER APPLICATIONS, IEEE transactions on microwave theory and techniques, 43(12), 1995, pp. 3048-3054
Authors:
HAFIZI M
LIU T
STANCHINA WE
RENSCH DB
LUI M
BROWN YK
Citation: M. Hafizi et al., IMPORTANCE OF COLLECTOR DOPING IN THE DESIGN OF ALINAS GAINAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, Applied physics letters, 64(24), 1994, pp. 3261-3263
Authors:
HAFIZI M
METZGER RA
STANCHINA WE
Citation: M. Hafizi et al., DEPENDENCE OF DC CURRENT GAIN AND FMAX OF ALINAS GAINAS HBTS ON BASE SHEET RESISTANCE/, IEEE electron device letters, 14(7), 1993, pp. 323-325
Authors:
HAFIZI M
STANCHINA WE
METZGER RA
MACDONALD PA
WILLIAMS F
Citation: M. Hafizi et al., TEMPERATURE-DEPENDENCE OF DC AND RF CHARACTERISTICS OF ALINAS GAINAS HBTS/, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1583-1588
Authors:
HAFIZI M
STANCHINA WE
METZGER RA
JENSEN JF
WILLIAMS F
Citation: M. Hafizi et al., RELIABILITY OF ALINAS GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2178-2185
Authors:
METZGER RA
HAFIZI M
STANCHINA WE
LIU T
WILSON RG
MCCRAY LG
Citation: Ra. Metzger et al., CONFINEMENT OF HIGH BE DOPING LEVELS IN ALINAS GAINAS NPN HETEROJUNCTION BIPOLAR-TRANSISTORS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH/, Applied physics letters, 63(10), 1993, pp. 1360-1362
Authors:
HAFIZI M
METZGER RA
STANCHINA WE
Citation: M. Hafizi et al., STABILITY OF BERYLLIUM-DOPED COMPOSITIONALLY GRADED AND ABRUPT ALINASGAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Applied physics letters, 63(1), 1993, pp. 93-95
Risultati:
1-13
|