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Authors:
DE SS
GHOSH AK
PATTANAYAK TK
BERA M
HALDAR JC
HAJRA AK
GUHA S
Citation: Ss. De et al., STUDIES ON SOME CHARACTERISTICS OF HEAVILY-DOPED N(-GAAS())N-GE HETEROJUNCTION STRUCTURES/, Physica status solidi. a, Applied research, 155(1), 1996, pp. 279-285
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Authors:
DE SS
GHOSH AK
SINHA PK
BERA M
SIL D
HALDAR JC
Citation: Ss. De et al., STUDIES ON SURFACE RECOMBINATION VELOCITY IN A HEAVILY-DOPED ABRUPT N(-P JUNCTION()), Physica status solidi. a, Applied research, 146(2), 1994, pp. 5-8
Citation: Ss. De et al., LEAKAGE CURRENT STUDY OF A HIGH-LOW JUNCTION WITH VARIATION OF INJECTION LEVEL, Physica status solidi. a, Applied research, 139(1), 1993, pp. 29-33
Citation: Ss. De et al., STUDIES ON AUGER RECOMBINATION LIFETIME IN HEAVILY-DOPED INGAASP, Physica status solidi. a, Applied research, 138(1), 1993, pp. 13-16