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Results:
1-7
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Results: 7
Authors:
DE SS
GHOSH AK
BERA M
HAJRA A
HALDAR JC
Citation: Ss. De et al., INFLUENCE OF BUILT-IN POTENTIAL ON THE EFFECTIVE SURFACE RECOMBINATION VELOCITY FOR A HEAVILY-DOPED HIGH-LOW JUNCTION, Physica. B, Condensed matter, 228(3-4), 1996, pp. 363-368
Authors:
DE SS
GHOSH AK
PATTANAYAK TK
BERA M
HALDAR JC
HAJRA AK
GUHA S
Citation: Ss. De et al., STUDIES ON SOME CHARACTERISTICS OF HEAVILY-DOPED N(-GAAS())N-GE HETEROJUNCTION STRUCTURES/, Physica status solidi. a, Applied research, 155(1), 1996, pp. 279-285
Authors:
DE SS
GHOSH AK
HAJRA AK
BERA M
HALDAR JC
Citation: Ss. De et al., HEAVY DOPING EFFECTS ON OPEN-CIRCUIT VOLTAGE DECAY IN AN ABRUPT P(-N JUNCTION()), Solid-state electronics, 37(10), 1994, pp. 1775-1777
Authors:
DE SS
GHOSH AK
SINHA PK
BERA M
SIL D
HALDAR JC
Citation: Ss. De et al., STUDIES ON SURFACE RECOMBINATION VELOCITY IN A HEAVILY-DOPED ABRUPT N(-P JUNCTION()), Physica status solidi. a, Applied research, 146(2), 1994, pp. 5-8
Authors:
DE SS
GHOSH AK
HALDAR JC
HAJRA AK
BERA M
Citation: Ss. De et al., LEAKAGE CURRENT STUDY OF A HIGH-LOW JUNCTION WITH VARIATION OF INJECTION LEVEL, Physica status solidi. a, Applied research, 139(1), 1993, pp. 29-33
Authors:
DE SS
GHOSH AK
HALDAR JC
HAJRA AK
BERA M
Citation: Ss. De et al., STUDIES ON AUGER RECOMBINATION LIFETIME IN HEAVILY-DOPED INGAASP, Physica status solidi. a, Applied research, 138(1), 1993, pp. 13-16
Authors:
DE SS
GHOSH AK
BERA M
HAZRA AK
HALDAR JC
Citation: Ss. De et al., STUDIES ON CARRIER LIFETIME IN HEAVILY-DOPED INGAASP, Canadian journal of physics, 71(11-12), 1993, pp. 582-585
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1-7
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