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Results: 1-25 | 26-44
Results: 1-25/44
DIELECTRIC-ASSISTED TRILAYER LIFT-OFF PROCESS FOR IMPROVED METAL DEFINITION
Authors: RYAN RW KOPF RF HAMM RA MALIK RJ MASAITIS R OPILA R
Citation: Rw. Ryan et al., DIELECTRIC-ASSISTED TRILAYER LIFT-OFF PROCESS FOR IMPROVED METAL DEFINITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2759-2762
SIDE-BY-SIDE WAFER BONDING OF INP FOR USE WITH STEPPER-BASED LITHOGRAPHY
Authors: RYAN RW KOPF RF TATE A BURM J HAMM RA
Citation: Rw. Ryan et al., SIDE-BY-SIDE WAFER BONDING OF INP FOR USE WITH STEPPER-BASED LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2110-2112
EVALUATION OF ENCAPSULATION AND PASSIVATION OF INGAAS INP DHBT DEVICES FOR LONG-TERM RELIABILITY/
Authors: KOPF RF HAMM RA RYAN RW BURM J TATE A CHEN YK GEORGIOU G LANG DV REN F
Citation: Rf. Kopf et al., EVALUATION OF ENCAPSULATION AND PASSIVATION OF INGAAS INP DHBT DEVICES FOR LONG-TERM RELIABILITY/, Journal of electronic materials, 27(8), 1998, pp. 954-960
ECR PLASMA ETCH FABRICATION OF C-DOPED BASE INGAAS INP DHBT STRUCTURES - A COMPARISON OF CH4/H-2/AR VS BCL3/N-2 PLASMA ETCH CHEMISTRIES/
Authors: KOPF RF HAMM RA MALIK RJ RYAN RW GEVA M BURM J TATE A
Citation: Rf. Kopf et al., ECR PLASMA ETCH FABRICATION OF C-DOPED BASE INGAAS INP DHBT STRUCTURES - A COMPARISON OF CH4/H-2/AR VS BCL3/N-2 PLASMA ETCH CHEMISTRIES/, Journal of electronic materials, 27(2), 1998, pp. 69-72
OPTIMIZATION OF THE BASE ELECTRODE FOR INGAAS INP DHBT STRUCTURES WITH A BURIED EMITTER-BASE JUNCTION/
Authors: KOPF RF HAMM RA RYAN RW TATE A BURM J
Citation: Rf. Kopf et al., OPTIMIZATION OF THE BASE ELECTRODE FOR INGAAS INP DHBT STRUCTURES WITH A BURIED EMITTER-BASE JUNCTION/, Journal of electronic materials, 27(11), 1998, pp. 1244-1247
INTER-LIGHT-HOLE SUBBAND ABSORPTION IN TENSILE-STRAINED INGAAS INP QUANTUM-WELLS/
Authors: ILOUZ I OIKNINESCHLESINGER J GERSHONI D EHRENFREUND E RITTER D HAMM RA VANDENBERG JM
Citation: I. Ilouz et al., INTER-LIGHT-HOLE SUBBAND ABSORPTION IN TENSILE-STRAINED INGAAS INP QUANTUM-WELLS/, Superlattices and microstructures, 19(1), 1996, pp. 61-67
METALLURGICAL STABILITY OF OHMIC CONTACTS ON THIN BASE INP INGAAS/INPHBTS/
Authors: CHOR EF MALIK RJ HAMM RA RYAN R
Citation: Ef. Chor et al., METALLURGICAL STABILITY OF OHMIC CONTACTS ON THIN BASE INP INGAAS/INPHBTS/, IEEE electron device letters, 17(2), 1996, pp. 62-64
PASSIVATION OF CARBON DOPING IN INGAAS DURING ECR-CVD OF SINX
Authors: REN F HAMM RA LOTHIAN JR WILSON RG PEARTON SJ
Citation: F. Ren et al., PASSIVATION OF CARBON DOPING IN INGAAS DURING ECR-CVD OF SINX, Solid-state electronics, 39(5), 1996, pp. 763-765
MATERIALS AND ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GA0.47IN0.53AS USING CARBONTETRABROMIDE BY MOMBE FOR HBT DEVICE APPLICATIONS
Authors: HAMM RA CHANDRASEKHAR S LUNARDI L GEVA M MALIK R HUMPHREY D RYAN R
Citation: Ra. Hamm et al., MATERIALS AND ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GA0.47IN0.53AS USING CARBONTETRABROMIDE BY MOMBE FOR HBT DEVICE APPLICATIONS, Journal of crystal growth, 164(1-4), 1996, pp. 362-370
CARRIER DYNAMICS AND PHOTODETECTION IN CHARGE INJECTION TRANSISTORS
Authors: FRANKEL MY BELENKY GL LURYI S CARRUTHERS TF DENNIS ML CHO AY HAMM RA SIVCO DL
Citation: My. Frankel et al., CARRIER DYNAMICS AND PHOTODETECTION IN CHARGE INJECTION TRANSISTORS, Journal of applied physics, 79(6), 1996, pp. 3312-3317
MEASUREMENT AND COMPARISON OF 1 F NOISE AND G-R NOISE IN SILICON HOMOJUNCTION AND III-V HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: KIRTANIA AK DAS MB CHANDRASEKHAR S LUNARDI LM QUA GJ HAMM RA YANG LW
Citation: Ak. Kirtania et al., MEASUREMENT AND COMPARISON OF 1 F NOISE AND G-R NOISE IN SILICON HOMOJUNCTION AND III-V HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 784-792
KA-BAND MONOLITHIC INGAAS INP HBT VCOS IN CPW STRUCTURE/
Authors: LIN J CHEN YK HUMPHREY DA HAMM RA MALIK RJ TATE A KOPF RF RYAN RW
Citation: J. Lin et al., KA-BAND MONOLITHIC INGAAS INP HBT VCOS IN CPW STRUCTURE/, IEEE microwave and guided wave letters, 5(11), 1995, pp. 379-381
A 12-GB S HIGH-PERFORMANCE, HIGH-SENSITIVITY MONOLITHIC P-I-N/HBT PHOTORECEIVER MODULE FOR LONG-WAVELENGTH TRANSMISSION-SYSTEMS/
Authors: LUNARDI LM CHANDRASEKHAR S GNAUCK AH BURRUS CA HAMM RA SULHOFF JW ZYSKIND JL
Citation: Lm. Lunardi et al., A 12-GB S HIGH-PERFORMANCE, HIGH-SENSITIVITY MONOLITHIC P-I-N/HBT PHOTORECEIVER MODULE FOR LONG-WAVELENGTH TRANSMISSION-SYSTEMS/, IEEE photonics technology letters, 7(2), 1995, pp. 182-184
20-GB S MONOLITHIC P-I-N/HBT PHOTORECEIVER MODULE FOR 1.55-MU-M APPLICATIONS/
Authors: LUNARDI LM CHANDRASEKHAR S GNAUCK AH BURRUS CA HAMM RA
Citation: Lm. Lunardi et al., 20-GB S MONOLITHIC P-I-N/HBT PHOTORECEIVER MODULE FOR 1.55-MU-M APPLICATIONS/, IEEE photonics technology letters, 7(10), 1995, pp. 1201-1203
KINETIC ROUGHNESS IN EPITAXY (EXPERIMENTAL)
Authors: COTTA MA HAMM RA CHU SNG HULL R HARRIOTT LR TEMKIN H
Citation: Ma. Cotta et al., KINETIC ROUGHNESS IN EPITAXY (EXPERIMENTAL), Materials science & engineering. B, Solid-state materials for advanced technology, 30(2-3), 1995, pp. 137-142
PRIORITIZING INTERSECTION IMPROVEMENTS FOR CMAQ FUNDING
Authors: HAMM RA
Citation: Ra. Hamm, PRIORITIZING INTERSECTION IMPROVEMENTS FOR CMAQ FUNDING, ITE journal, 65(11), 1995, pp. 21-23
EFFECT OF ECR PLASMA ON THE LUMINESCENCE EFFICIENCY OF INGAAS AND INP
Authors: REN F BUCKLEY DN LEE KM PEARTON SJ BARTYNSKI RA CONSTANTINE C HOBSON WS HAMM RA CHAO PC
Citation: F. Ren et al., EFFECT OF ECR PLASMA ON THE LUMINESCENCE EFFICIENCY OF INGAAS AND INP, Solid-state electronics, 38(12), 1995, pp. 2011-2015
CHARACTERISTICS OF CARBON-DOPED INGAAS USING CARBONTETRABROMIDE BY METALORGANIC MOLECULAR-BEAM EPITAXY
Authors: HAMM RA CHANDRASEKHAR S LUNARDI L GEVA M
Citation: Ra. Hamm et al., CHARACTERISTICS OF CARBON-DOPED INGAAS USING CARBONTETRABROMIDE BY METALORGANIC MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 148(1-2), 1995, pp. 1-7
ENHANCED STEAM-ASSISTED GRAVITY DRAINAGE - A NEW HORIZONTAL WELL RECOVERY PROCESS FOR PEACE RIVER, CANADA
Authors: HAMM RA ONG TS
Citation: Ra. Hamm et Ts. Ong, ENHANCED STEAM-ASSISTED GRAVITY DRAINAGE - A NEW HORIZONTAL WELL RECOVERY PROCESS FOR PEACE RIVER, CANADA, Journal of Canadian Petroleum Technology, 34(4), 1995, pp. 33-40
EXTRACTION OF THE INP GAINAS HETEROJUNCTION BIPOLAR-TRANSISTOR SMALL-SIGNAL EQUIVALENT-CIRCUIT/
Authors: SPIEGEL SJ RITTER D HAMM RA FEYGENSON A SMITH PR
Citation: Sj. Spiegel et al., EXTRACTION OF THE INP GAINAS HETEROJUNCTION BIPOLAR-TRANSISTOR SMALL-SIGNAL EQUIVALENT-CIRCUIT/, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1059-1064
CARBON DOPING OF GA0.47IN0.53AS USING CARBONTETRABROMIDE BY METALORGANIC MOLECULAR-BEAM EPITAXY FOR INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTOR DEVICES
Authors: HAMM RA MALIK R HUMPHREY D RYAN R CHANDRASEKHAR S LUNARDI L GEVA M
Citation: Ra. Hamm et al., CARBON DOPING OF GA0.47IN0.53AS USING CARBONTETRABROMIDE BY METALORGANIC MOLECULAR-BEAM EPITAXY FOR INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTOR DEVICES, Applied physics letters, 67(15), 1995, pp. 2226-2228
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN INGAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: CANALI C FORZAN C NEVIANI A VENDRAME L ZANONI E HAMM RA MALIK RJ CAPASSO F CHANDRASEKHAR S
Citation: C. Canali et al., MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN INGAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS, Applied physics letters, 66(9), 1995, pp. 1095-1097
NONSTATIONARY 1 F NOISE IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: ALERS GB MARTIN S HAMM RA FEYGENSON A YADVISH RD
Citation: Gb. Alers et al., NONSTATIONARY 1 F NOISE IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Applied physics letters, 66(2), 1995, pp. 198-200
ON THE ORIGIN OF OVAL DEFECTS IN METALORGANIC MOLECULAR-BEAM EPITAXY OF INP
Authors: COTTA MA HAMM RA CHU SNG HARRIOTT LR TEMKIN H
Citation: Ma. Cotta et al., ON THE ORIGIN OF OVAL DEFECTS IN METALORGANIC MOLECULAR-BEAM EPITAXY OF INP, Applied physics letters, 66(18), 1995, pp. 2358-2360
OPTICAL-TRANSITIONS BETWEEN LIGHT-HOLE SUBBANDS IN INGAAS INP STRAINED-LAYER MULTIQUANTUM WELLS/
Authors: ILOUZ I OIKNINESCHLESINGER J GERSHONI D EHRENFREUND E RITTER D HAMM RA VANDENBERG JM
Citation: I. Ilouz et al., OPTICAL-TRANSITIONS BETWEEN LIGHT-HOLE SUBBANDS IN INGAAS INP STRAINED-LAYER MULTIQUANTUM WELLS/, Applied physics letters, 66(17), 1995, pp. 2268-2270
Risultati: 1-25 | 26-44