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Results:
1-8
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Results: 8
Authors:
RUPP T
KAESEN F
HANSCH W
HAMMERL E
GRAVESTEIJN DJ
SCHORER R
SILVEIRA E
ABSTREITER G
EISELE I
Citation: T. Rupp et al., DEFECT-FREE STRAIN RELAXATION IN LOCALLY MBE-GROWN SIGE HETEROSTRUCTURES, Thin solid films, 294(1-2), 1997, pp. 27-32
Authors:
PINDL S
BIEBL M
HAMMERL E
SCHAFER H
VONPHILIPSBORN H
Citation: S. Pindl et al., OXIDATION ENHANCED DIFFUSION OF BORON IN SILICON-ON-INSULATOR SUBSTRATES, Journal of the Electrochemical Society, 144(11), 1997, pp. 4022-4026
Authors:
HANSCH W
HAMMERL E
KIUNKE W
EISELE I
RAMM J
BECK E
Citation: W. Hansch et al., SILICON MOLECULAR-BEAM EPITAXY ON HYDROGEN-PLASMA-CLEANED SUBSTRATES, JPN J A P 1, 33(4B), 1994, pp. 2263-2267
Authors:
GOSSNER H
BAUMGARTNER H
HAMMERL E
WITTMANN F
EISELE I
HEINZEL T
LORENZ H
Citation: H. Gossner et al., SELF-ORGANIZING GROWTH OF NANOMETER MESA STRUCTURES ON SILICON (100) SUBSTRATES, JPN J A P 1, 33(4B), 1994, pp. 2268-2271
Authors:
BRITTON DT
WILLUTZKI P
TRIFTSHAUSER W
HAMMERL E
HANSCH W
EISELE I
Citation: Dt. Britton et al., ON THE SENSITIVITY OF POSITRONS TO ELECTRIC-FIELDS AND DEFECTS IN MBE-GROWN SILICON STRUCTURES, Applied physics. A, Solids and surfaces, 58(4), 1994, pp. 389-393
Authors:
KIUNKE W
HAMMERL E
EISELE I
Citation: W. Kiunke et al., MBE-GROWN VERTICAL SILICON MOSFETS WITH SUB-0.3 MU-M CHANNEL LENGTHS, Journal of crystal growth, 127(1-4), 1993, pp. 73-75
Authors:
HAMMERL E
WITTMANN F
EISELE I
HEINZEL T
KUHN S
LORENZ H
KOTTHAUS JP
Citation: E. Hammerl et al., NANOMETER-SCALE LOCAL EPITAXY WITH SILICON MBE, Journal of crystal growth, 127(1-4), 1993, pp. 447-450
Authors:
HAMMERL E
EISELE I
Citation: E. Hammerl et I. Eisele, LOCAL SILICON MOLECULAR-BEAM EPITAXY WITH MICROSHADOW MASKS, Applied physics letters, 62(18), 1993, pp. 2221-2223
Risultati:
1-8
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