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Results: 1-8 |
Results: 8

Authors: YANG H HAN SD WANG L KIM IJ SON YM
Citation: H. Yang et al., PREPARATION AND CHARACTERIZATION OF INDIUM-DOPED TIN DIOXIDE NANOCRYSTALLINE POWDERS, Materials chemistry and physics, 56(2), 1998, pp. 153-156

Authors: GASSMAN PG HAN SD CHYALL LJ
Citation: Pg. Gassman et al., THERMAL REARRANGEMENTS OF 7,7-DIHALO-TRANS-BICYCLO[4.1.0]HEPT-3-ENES, Tetrahedron letters, 39(31), 1998, pp. 5459-5462

Authors: HAN SD KASS SR
Citation: Sd. Han et Sr. Kass, THE SYNTHESIS OF POTENTIAL CYCLOPROPENYL ANION PRECURSORS - 3-METHYL-3-TRIMETHYLSILYLCYCLOPROPENE AND ITS DIBENZOYL DERIVATIVE, Tetrahedron letters, 38(43), 1997, pp. 7503-7506

Authors: CHOI IH HAN SD EOM SH LEE WH LEE HC
Citation: Ih. Choi et al., DICHROIC PROPERTIES NEAR THE ENERGY-BAND GAP IN AGGASE2, AGGAS2, CUGAS2 AND CUINSE2 COMPOUNDS, Journal of the Korean Physical Society, 29(3), 1996, pp. 377-383

Authors: CHO JS KWAG JG OH YR HAN SD SONG CJ
Citation: Js. Cho et al., DETECTION AND CHARACTERIZATION OF HEPATOCELLULAR-CARCINOMA - VALUE OFDYNAMIC CT DURING THE ARTERIAL DOMINANT PHASE WITH UNIPHASIC CONTRAST-MEDIUM INJECTION, Journal of computer assisted tomography, 20(1), 1996, pp. 128-134

Authors: HAN SD ZOU WH JIN S ZHANG Z YANG DH
Citation: Sd. Han et al., THE STUDIES OF THE MARTENSITE TRANSFORMATIONS IN A TI36.5NI48.5HF15 ALLOY, Scripta metallurgica et materialia, 32(9), 1995, pp. 1441-1446

Authors: CAMPET G HAN SD WEN SJ SHASTRY MCR CHAMINADE B MARQUESTAUT E PORTIER J DORDOR P
Citation: G. Campet et al., CORRELATIONS BETWEEN THE THERMOELECTRIC-POWER AND HALL-EFFECT OF SN OR GE DOPED IN2O3 SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 274-278

Authors: CAMPET G HAN SD WEN SJ MANAUD JP PORTIER J XU Y SALARDENNE J
Citation: G. Campet et al., THE ELECTRONIC EFFECT OF TI4-PROPERTIES OF IN2O3 AND SN-DOPED IN2O3 CERAMICS - APPLICATION TO NEW HIGHLY-TRANSPARENT CONDUCTIVE ELECTRODES(, ZR4+ AND GE4+ DOPINGS UPON THE PHYSICAL), Materials science & engineering. B, Solid-state materials for advanced technology, 19(3), 1993, pp. 285-289
Risultati: 1-8 |