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Authors: HANINGTON G HSIN YM LIU QZ ASBECK PM LAU SS KHAN MA YANG JW CHEN Q

Citation: G. Hanington et al., P HE ION IMPLANT ISOLATION TECHNOLOGY FOR ALGAN/GAN HFETS/, Electronics Letters, 34(2), 1998, pp. 193-195

Authors: HANINGTON G ASBECK PM

Citation: G. Hanington et Pm. Asbeck, BASE RESISTANCE MEASUREMENTS IN HBTS USING BASE-EMITTER REVERSE BIAS BREAKDOWN, Solid-state electronics, 41(5), 1997, pp. 669-671

Authors: HANINGTON G CHANG CE ZAMPARDI PJ ASBECK PM

Citation: G. Hanington et al., THERMAL EFFECTS IN HBT EMITTER RESISTANCE EXTRACTION, Electronics Letters, 32(16), 1996, pp. 1515-1516