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Results: 1-8 |
Results: 8
ELECTROLESS AND ELECTRO-PLATING OF CU ON SI
Authors: DOSSANTOS SG MARTINS LFO DAJELLO PCT PASA AA HASENACK CM
Citation: Sg. Dossantos et al., ELECTROLESS AND ELECTRO-PLATING OF CU ON SI, Microelectronic engineering, 33(1-4), 1997, pp. 59-64
A MECHANISM FOR ELECTROLESS CU PLATING ONTO SI
Authors: DOSSANTOS SG PASA AA HASENACK CM
Citation: Sg. Dossantos et al., A MECHANISM FOR ELECTROLESS CU PLATING ONTO SI, Microelectronic engineering, 33(1-4), 1997, pp. 149-155
ELECTROCHEMICAL EVIDENCE OF A COPPER-INDUCED ETCHING OF N-TYPE SI IN DILUTE HYDROFLUORIC-ACID SOLUTIONS
Authors: MARTINS LFO SELIGMAN L SANTOS SG DAJELLO PCT HASENACK CM PASA AA
Citation: Lfo. Martins et al., ELECTROCHEMICAL EVIDENCE OF A COPPER-INDUCED ETCHING OF N-TYPE SI IN DILUTE HYDROFLUORIC-ACID SOLUTIONS, Journal of the Electrochemical Society, 144(5), 1997, pp. 106-108
METAL CONTAMINATION OF SILICON-WAFERS INDUCED BY REACTIVE ION ETCHINGPLASMAS AND ITS BEHAVIOR UPON SUBSEQUENT CLEANING PROCEDURES
Authors: VERDONCK P HASENACK CM MANSANO RD
Citation: P. Verdonck et al., METAL CONTAMINATION OF SILICON-WAFERS INDUCED BY REACTIVE ION ETCHINGPLASMAS AND ITS BEHAVIOR UPON SUBSEQUENT CLEANING PROCEDURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 538-542
SI-SIO2 ELECTRONIC INTERFACE ROUGHNESS AS A CONSEQUENCE OF SI-SIO2 TOPOGRAPHIC INTERFACE ROUGHNESS
Authors: LOPES MCV DOSSANTOS SG HASENACK CM BARANAUSKAS V
Citation: Mcv. Lopes et al., SI-SIO2 ELECTRONIC INTERFACE ROUGHNESS AS A CONSEQUENCE OF SI-SIO2 TOPOGRAPHIC INTERFACE ROUGHNESS, Journal of the Electrochemical Society, 143(3), 1996, pp. 1021-1025
RAPID THERMAL-OXIDATION OF SILICON WITH DIFFERENT THERMAL ANNEALING CYCLES IN NITROGEN - INFLUENCE ON SURFACE MICROROUGHNESS AND ELECTRICALCHARACTERISTICS
Authors: DOSSANTOS SG HASENACK CM LOPES MCV BARANAUSKAS V
Citation: Sg. Dossantos et al., RAPID THERMAL-OXIDATION OF SILICON WITH DIFFERENT THERMAL ANNEALING CYCLES IN NITROGEN - INFLUENCE ON SURFACE MICROROUGHNESS AND ELECTRICALCHARACTERISTICS, Semiconductor science and technology, 10(7), 1995, pp. 990-996
A LESS CRITICAL CLEANING PROCEDURE FOR SILICON-WAFER USING DILUTED HFDIP AND BOILING IN ISOPROPYL-ALCOHOL AS FINAL STEPS
Authors: FILHO SGD HASENACK CM SALAY LC MERTENS P
Citation: Sgd. Filho et al., A LESS CRITICAL CLEANING PROCEDURE FOR SILICON-WAFER USING DILUTED HFDIP AND BOILING IN ISOPROPYL-ALCOHOL AS FINAL STEPS, Journal of the Electrochemical Society, 142(3), 1995, pp. 902-907
NUMERICAL-CALCULATIONS OF THE ELECTRICAL EFFECTS INDUCED BY STRUCTURAL IMPERFECTIONS ON MOS CAPACITORS
Authors: LOPES MCV HASENACK CM BARANAUSKAS V
Citation: Mcv. Lopes et al., NUMERICAL-CALCULATIONS OF THE ELECTRICAL EFFECTS INDUCED BY STRUCTURAL IMPERFECTIONS ON MOS CAPACITORS, Journal of the Electrochemical Society, 141(6), 1994, pp. 1621-1628
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