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Results: 1-7 |
Results: 7

Authors: CAMBEL V GREGUSOVA D ELIAS P HASENOHRL S OLEJNIKOVA B NOVAK J SCHAPERS T NEUROHR K FOX A
Citation: V. Cambel et al., CHARACTERIZATION OF INGAAS INP MICROSCOPIC HALL PROBE ARRAYS WITH A 2DEG ACTIVE LAYER/, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 188-191

Authors: HASENOHRL S KUCERA M NOVAK J BUJDAK M ELIAS P KUDELA R
Citation: S. Hasenohrl et al., MOCVD GROWTH OF INXGA1-XAS GAAS MULTIPLE-QUANTUM-WELL AND SUPERLATTICE STRUCTURES FOR OPTICAL MODULATORS/, Solid-state electronics, 42(2), 1998, pp. 263-267

Authors: MARES JJ KRISTOFIK J HUBIK P HULICIUS E MELICHAR K PANGRAC J NOVAK J HASENOHRL S
Citation: Jj. Mares et al., OUT-OF-PLANE WEAK-LOCALIZATION IN 2-DIMENSIONAL ELECTRON STRUCTURES, Physical review letters, 80(18), 1998, pp. 4020-4023

Authors: NOVAK J HASENOHRL S KUCERA M HJELT K TUOMI T
Citation: J. Novak et al., SULFUR-DOPING OF GASB GROWN BY ATMOSPHERIC-PRESSURE MOVPE, Journal of crystal growth, 183(1-2), 1998, pp. 69-74

Authors: NOVAK J HASENOHRL S KUDELA R KUCERA M WULLNER D WEHMANN HH
Citation: J. Novak et al., RESISTIVITY ANISOTROPY IN ORDERED INXGA1-XP GROWN AT 640-DEGREES-C, Applied physics letters, 73(3), 1998, pp. 369-371

Authors: HARDTDEGEN H UNGERMANNS C HOLLFELDER M RAAFAT T CARIUS R HASENOHRL S LUTH H
Citation: H. Hardtdegen et al., A NEW APPROACH TOWARDS LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY OF (ALGA)AS USING TRIETHYLGALLIUM AND DIMETHYLETHYLAMINEALANE, Journal of crystal growth, 145(1-4), 1994, pp. 478-484

Authors: NOVAK J HASENOHRL S MALACKY L
Citation: J. Novak et al., LARGE ACTIVATION OF PRASEODYMIUM IN IN0.53GA0.47AS, Semiconductor science and technology, 8(5), 1993, pp. 747-749
Risultati: 1-7 |