Authors:
KIM JK
SAKUI K
LEE SS
ITOH Y
KWON SC
KANAZAWA K
LEE KJ
NAKAMURA H
KIM KY
HIMENO T
KIM JR
KANDA K
JUNG TS
OSHIMA Y
SUH KD
HASHIMOTO K
AHN ST
MIYAMOTO J
Citation: Jk. Kim et al., A 120-MM(2) 64-MB NAND FLASH MEMORY ACHIEVING 180-NS BYTE EFFECTIVE PROGRAM SPEED/, IEEE journal of solid-state circuits, 32(5), 1997, pp. 670-680