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Results: 1-10 |
Results: 10
HIGH-PERFORMANCE THIN-FILM TRANSISTORS IN LARGE GRAIN-SIZE POLYSILICON DEPOSITED BY THERMAL-DECOMPOSITION OF DISILANE
Authors: KOUVATSOS DN VOUTSAS AT HATALIS MK
Citation: Dn. Kouvatsos et al., HIGH-PERFORMANCE THIN-FILM TRANSISTORS IN LARGE GRAIN-SIZE POLYSILICON DEPOSITED BY THERMAL-DECOMPOSITION OF DISILANE, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1399-1406
POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED AT REDUCED THERMAL BUDGETS BY UTILIZING FLUORINATED GATE OXIDATION
Authors: KOUVATSOS DN HATALIS MK
Citation: Dn. Kouvatsos et Mk. Hatalis, POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED AT REDUCED THERMAL BUDGETS BY UTILIZING FLUORINATED GATE OXIDATION, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1448-1453
LEAKAGE CURRENT MECHANISM IN SUBMICRON POLYSILICON THIN-FILM TRANSISTORS
Authors: OLASUPO KR HATALIS MK
Citation: Kr. Olasupo et Mk. Hatalis, LEAKAGE CURRENT MECHANISM IN SUBMICRON POLYSILICON THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1218-1223
THE EFFECT OF DRAIN OFFSET ON CURRENT-VOLTAGE CHARACTERISTICS IN SUB MICRON POLYSILICON THIN-FILM TRANSISTORS
Authors: OLASUPO KR YARBROUGH W HATALIS MK
Citation: Kr. Olasupo et al., THE EFFECT OF DRAIN OFFSET ON CURRENT-VOLTAGE CHARACTERISTICS IN SUB MICRON POLYSILICON THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1306-1308
SINGLE-CRYSTAL SILICON THIN-FILM TRANSISTORS FABRICATED AT LOW PROCESS TEMPERATURES ON GLASS SUBSTRATES
Authors: KOUVATSOS DN TSOUKALAS D SARCONA GT HATALIS MK STOEMENOS J
Citation: Dn. Kouvatsos et al., SINGLE-CRYSTAL SILICON THIN-FILM TRANSISTORS FABRICATED AT LOW PROCESS TEMPERATURES ON GLASS SUBSTRATES, Electronics Letters, 32(8), 1996, pp. 775-777
RAMAN-SPECTROSCOPY OF AMORPHOUS AND MICROCRYSTALLINE SILICON FILMS DEPOSITED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: VOUTSAS AT HATALIS MK BOYCE J CHIANG A
Citation: At. Voutsas et al., RAMAN-SPECTROSCOPY OF AMORPHOUS AND MICROCRYSTALLINE SILICON FILMS DEPOSITED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 78(12), 1995, pp. 6999-7006
STRUCTURAL CHARACTERISTICS OF AS-DEPOSITED AND CRYSTALLIZED MIXED-PHASE SILICON FILMS
Authors: VOUTSAS AT HATALIS MK
Citation: At. Voutsas et Mk. Hatalis, STRUCTURAL CHARACTERISTICS OF AS-DEPOSITED AND CRYSTALLIZED MIXED-PHASE SILICON FILMS, Journal of electronic materials, 23(3), 1994, pp. 319-330
CHARACTERIZATION OF COBALT ANNEALED ON SILICON-GERMANIUM EPILAYERS
Authors: LIN F SARCONA G HATALIS MK CSERHATI AF AUSTIN E GREVE DW
Citation: F. Lin et al., CHARACTERIZATION OF COBALT ANNEALED ON SILICON-GERMANIUM EPILAYERS, Thin solid films, 250(1-2), 1994, pp. 20-25
PROPERTIES OF CADMIUM SELENIDE THIN-FILMS AS A FUNCTION OF LATERAL DISTANCE FROM CHROMIUM CONTACTS
Authors: WAECHTER D WESTCOTT MR LIN F HATALIS MK
Citation: D. Waechter et al., PROPERTIES OF CADMIUM SELENIDE THIN-FILMS AS A FUNCTION OF LATERAL DISTANCE FROM CHROMIUM CONTACTS, Journal of the Electrochemical Society, 140(10), 1993, pp. 2994-2998
CRYSTALLIZED MIXED-PHASE SILICON FILMS FOR THIN-FILM TRANSISTORS ON GLASS SUBSTRATES
Authors: VOUTSAS AT HATALIS MK
Citation: At. Voutsas et Mk. Hatalis, CRYSTALLIZED MIXED-PHASE SILICON FILMS FOR THIN-FILM TRANSISTORS ON GLASS SUBSTRATES, Applied physics letters, 63(11), 1993, pp. 1546-1548
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