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Results: 1-7 |
Results: 7
X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF METAL STACKS ETCHED IN CL-2 BCL3 HIGH-DENSITY PLASMAS/
Authors: CZUPRYNSKI P JOUBERT O VALLIER L PUTTOCK M HEITZMANN M
Citation: P. Czuprynski et al., X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF METAL STACKS ETCHED IN CL-2 BCL3 HIGH-DENSITY PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 147-158
EFFICIENCY EVALUATION OF POSTETCH METAL STACK ANTICORROSION TREATMENTS USING CHEMICAL-ANALYSES BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND WIDEDISPERSIVE-X-RAY FLUORESCENCE
Authors: CZUPRYNSKI P JOUBERT O HEITZMANN M LOUIS D VIZIOZ C LAJOINIE E
Citation: P. Czuprynski et al., EFFICIENCY EVALUATION OF POSTETCH METAL STACK ANTICORROSION TREATMENTS USING CHEMICAL-ANALYSES BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND WIDEDISPERSIVE-X-RAY FLUORESCENCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1000-1007
ELIMINATION OF STRESS-INDUCED DEFECTS IN POLYBUFFERED LOCOS ISOLATIONSCHEME FOR SUB-0.25-MU-M DESIGNS
Authors: DELEONIBUS S MARTIN F HEITZMANN M GUIBERT JC PAPON AM
Citation: S. Deleonibus et al., ELIMINATION OF STRESS-INDUCED DEFECTS IN POLYBUFFERED LOCOS ISOLATIONSCHEME FOR SUB-0.25-MU-M DESIGNS, Journal of the Electrochemical Society, 144(6), 1997, pp. 164-166
HIGH-PRESSURE HIGH-TEMPERATURE STEAM OXIDATION POLY BUFFER LOCOS (HP-HTPBL) FIELD ISOLATION PROCESS FOR REDUCED ENCROACHMENT AND LOW-STRESS
Authors: DELEONIBUS S MARTIN F KIM SS EMAMI A FLORIN B HEITZMANN M LEROUX C
Citation: S. Deleonibus et al., HIGH-PRESSURE HIGH-TEMPERATURE STEAM OXIDATION POLY BUFFER LOCOS (HP-HTPBL) FIELD ISOLATION PROCESS FOR REDUCED ENCROACHMENT AND LOW-STRESS, JPN J A P 2, 35(9B), 1996, pp. 1169-1172
DIFFERENTIAL BODY EFFECT ANALYSIS AND OPTIMIZATION OF THE LARGE TILT IMPLANTED SLOPED SHALLOW TRENCH ISOLATION PROCESS (LATI-STI)
Authors: DELEONIBUS S HEITZMANN M GOBIL Y MARTIN F DEMOLLIENS O GUIBERT JC TOFFOLI A
Citation: S. Deleonibus et al., DIFFERENTIAL BODY EFFECT ANALYSIS AND OPTIMIZATION OF THE LARGE TILT IMPLANTED SLOPED SHALLOW TRENCH ISOLATION PROCESS (LATI-STI), JPN J A P 2, 35(8A), 1996, pp. 971-973
A HEAVY-ION IMPLANTED POCKET 0.10-MU-M N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HYBRID LITHOGRAPHY (ELECTRON-BEAM DEEPULTRAVIOLET) AND SPECIFIC GATE PASSIVATION PROCESS/
Authors: BENISTANT F TEDESCO S GUEGAN G MARTIN F HEITZMANN M DALZOTTO B
Citation: F. Benistant et al., A HEAVY-ION IMPLANTED POCKET 0.10-MU-M N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HYBRID LITHOGRAPHY (ELECTRON-BEAM DEEPULTRAVIOLET) AND SPECIFIC GATE PASSIVATION PROCESS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4051-4054
A 0.10 MU-M NMOSFET, MADE BY HYBRID LITHOGRAPHY (E-BEAM DUV), WITH INDIUM POCKET AND SPECIFIC GATE REOXIDATION PROCESS/
Authors: BENISTANT F TEDESCO S GUEGAN G MARTIN F HEITZMANN M DALZOTTO B
Citation: F. Benistant et al., A 0.10 MU-M NMOSFET, MADE BY HYBRID LITHOGRAPHY (E-BEAM DUV), WITH INDIUM POCKET AND SPECIFIC GATE REOXIDATION PROCESS/, Microelectronic engineering, 30(1-4), 1996, pp. 459-462
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