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Results: 1-25 | 26-50 | 51-59 |
Results: 51-59/59
DIRECT FORMATION OF DEVICE WORTHY THIN-FILM SIMOX STRUCTURES BY LOW-ENERGY OXYGEN IMPLANTATION
Authors: NEJIM A LI Y MARSH CD HEMMENT PLF CHATER RJ KILNER JA BOOKER GR
Citation: A. Nejim et al., DIRECT FORMATION OF DEVICE WORTHY THIN-FILM SIMOX STRUCTURES BY LOW-ENERGY OXYGEN IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 822-826
INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL
Authors: LIN C LI Y KILNER JA CHATER RJ LI J NEJIM A ZHANG JP HEMMENT PLF
Citation: C. Lin et al., INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 323-326
EVALUATION OF SILICON-ON-INSULATOR SUBSTRATES USING PHOTOCONDUCTIVE FREQUENCY-RESOLVED SPECTROSCOPY
Authors: LOURENCO MA HOMEWOOD KP HEMMENT PLF
Citation: Ma. Lourenco et al., EVALUATION OF SILICON-ON-INSULATOR SUBSTRATES USING PHOTOCONDUCTIVE FREQUENCY-RESOLVED SPECTROSCOPY, Journal of applied physics, 74(11), 1993, pp. 6754-6758
AN INVESTIGATION OF AS-IMPLANTED MATERIAL FORMED BY HIGH-DOSE 40 KEV OXYGEN IMPLANTATION INTO SILICON AT 550-DEGREES-C
Authors: LI Y KILNER JA CHATER RJ NEJIM A HEMMENT PLF TATE TJ
Citation: Y. Li et al., AN INVESTIGATION OF AS-IMPLANTED MATERIAL FORMED BY HIGH-DOSE 40 KEV OXYGEN IMPLANTATION INTO SILICON AT 550-DEGREES-C, Journal of applied physics, 74(1), 1993, pp. 82-85
NEW ETCHANT FOR CRYSTALLOGRAPHIC DEFECT STUDIES IN THIN SOI MATERIALS(LESS-THAN-1000 A-ANGSTROM)
Authors: GILES LF NEJIM A HEMMENT PLF
Citation: Lf. Giles et al., NEW ETCHANT FOR CRYSTALLOGRAPHIC DEFECT STUDIES IN THIN SOI MATERIALS(LESS-THAN-1000 A-ANGSTROM), Electronics Letters, 29(9), 1993, pp. 788-789
THE EFFECTS OF DOSE AND TARGET TEMPERATURE ON LOW-ENERGY SIMOX LAYERS
Authors: LI Y KILNER JA CHATER RJ HEMMENT PLF NEJIM A ROBINSON AK REESON KJ MARSH CD BOOKER GR
Citation: Y. Li et al., THE EFFECTS OF DOSE AND TARGET TEMPERATURE ON LOW-ENERGY SIMOX LAYERS, Journal of the Electrochemical Society, 140(6), 1993, pp. 1780-1786
OXYGEN ISOTOPIC EXCHANGE BETWEEN AN O-18-TEMPERATURE ANNEALING( SI LAYER AND A NATURAL SIO2 CAPPING LAYER DURING HIGH)
Authors: LI YP KILNER JA CHATER RJ NEJIM A HEMMENT PLF MARSH CD BOOKER GR
Citation: Yp. Li et al., OXYGEN ISOTOPIC EXCHANGE BETWEEN AN O-18-TEMPERATURE ANNEALING( SI LAYER AND A NATURAL SIO2 CAPPING LAYER DURING HIGH), Applied physics letters, 63(20), 1993, pp. 2812-2814
NUCLEAR MICROPROBE ION-CHANNELING ANALYSIS OF TOTAL DIELECTRIC ISOLATION STRUCTURES IN SILICON
Authors: THORNTON J ROBINSON AK REESON KJ DAVIS J HEMMENT PLF
Citation: J. Thornton et al., NUCLEAR MICROPROBE ION-CHANNELING ANALYSIS OF TOTAL DIELECTRIC ISOLATION STRUCTURES IN SILICON, Semiconductor science and technology, 6(9), 1991, pp. 890-895
OXYGEN RICH SIMOX
Authors: SCANLON PJ HEMMENT PLF REESON KJ ROBINSON AK KILNER JA CHATER RJ HARBEKE G
Citation: Pj. Scanlon et al., OXYGEN RICH SIMOX, Semiconductor science and technology, 6(8), 1991, pp. 730-734
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