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Results:
1-16
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Results: 16
Authors:
MARCINIAK MA
HENGEHOLD RL
YEO YK
TURNER GW
Citation: Ma. Marciniak et al., OPTICAL CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIALLY GROWN INASSB NEARLY LATTICE-MATCHED TO GASB, Journal of applied physics, 84(1), 1998, pp. 480-488
Authors:
COOLEY WT
HENGEHOLD RL
YEO YK
TURNER GW
LOEHR JP
Citation: Wt. Cooley et al., RECOMBINATION DYNAMICS IN INASSB QUANTUM-WELL DIODE-LASERS MEASURED USING PHOTOLUMINESCENCE UP-CONVERSION, Applied physics letters, 73(20), 1998, pp. 2890-2892
Authors:
SILKOWSKI E
POMRENKE GS
YEO YK
HENGEHOLD RL
Citation: E. Silkowski et al., OPTICAL ACTIVATION OF ION-IMPLANTED AND ANNEALED GAN, Physica scripta. T, T69, 1997, pp. 276-280
Authors:
REINHARDT KC
YEO YK
OSTDIEK PH
HENGEHOLD RL
Citation: Kc. Reinhardt et al., JUNCTION CHARACTERISTICS OF ELECTRON-IRRADIATED GA0.5IN0.5P N(-P DIODES AND SOLAR-CELLS()), Journal of applied physics, 81(8), 1997, pp. 3700-3706
Authors:
JOHNSTONE DK
YEO YK
HENGEHOLD RL
TURNER GW
Citation: Dk. Johnstone et al., DEEP-LEVEL CAPTURE BARRIER IN MOLECULAR-BEAM EPITAXIAL GROWN ALASYSB1-Y MEASURED BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY, Applied physics letters, 71(4), 1997, pp. 506-508
Authors:
MCCRAE JE
HENGEHOLD RL
YEO YK
OHMER MC
SCHUNEMANN PG
Citation: Je. Mccrae et al., PHOTOLUMINESCENCE STUDY OF P-TYPE CDGEAS2 ORDERED SEMICONDUCTOR CRYSTALS, Applied physics letters, 70(4), 1997, pp. 455-457
Authors:
KREIFELS TL
HENGEHOLD RL
YEO YK
THOMPSON PE
SIMONS DS
Citation: Tl. Kreifels et al., SI1-XGEX SI MULTIPLE-QUANTUM WELLS ON SI(100) AND SI(110) FOR INFRARED-ABSORPTION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 636-641
Authors:
THOMPSON PE
KREIFELS TL
GREGG M
HENGEHOLD RL
YEO YK
SIMONS DS
TWIGG ME
FATEMI M
HOBART K
Citation: Pe. Thompson et al., THE GROWTH AND CHARACTERIZATION OF SI1-XGEX MULTIPLE-QUANTUM WELLS ONSI(110) AND SI(111), Journal of crystal growth, 157(1-4), 1995, pp. 21-26
Authors:
THEE PL
YEO YK
HENGEHOLD RL
POMRENKE GS
Citation: Pl. Thee et al., PR3-XAS IMPLANTED WITH PR( LUMINESCENCE IN GAAS AND ALXGA1), Journal of applied physics, 78(7), 1995, pp. 4651-4658
Authors:
ELSAESSER DW
YEO YK
HENGEHOLD RL
EVANS KR
PEDROTTI FL
Citation: Dw. Elsaesser et al., ER-RELATED DEEP CENTERS IN GAAS DOPED WITH ER BY ION-IMPLANTATION ANDMOLECULAR-BEAM EPITAXY, Journal of applied physics, 77(8), 1995, pp. 3919-3926
Authors:
REINHARDT KC
YEO YK
HENGEHOLD RL
Citation: Kc. Reinhardt et al., JUNCTION CHARACTERISTICS OF GA0.5IN0.5P N(-CELLS()P DIODES AND SOLAR), Journal of applied physics, 77(11), 1995, pp. 5763-5772
Authors:
THEE PL
YEO YK
HENGEHOLD RL
POMRENKE GS
Citation: Pl. Thee et al., EXCITATION OF THE 4F-ELECTRON OF PR3-PR AND ALXGA1-XAS-PR( IN GAAS), Physica scripta. T, 54, 1994, pp. 24-27
Authors:
MCCRAE JE
GREGG MR
HENGEHOLD RL
YEO YK
OSTDIEK PH
OHMER MC
SCHUNEMANN PG
POLLAK TM
Citation: Je. Mccrae et al., POLARIZED LUMINESCENCE STUDY OF ORDERED NONLINEAR-OPTICAL MATERIAL ZNGEP2, Applied physics letters, 64(23), 1994, pp. 3142-3144
Authors:
STEINER TD
HENGEHOLD RL
YEO YK
GODBEY DJ
THOMPSON PE
POMRENKE GS
Citation: Td. Steiner et al., A STUDY OF BROAD-BAND PHOTOLUMINESCENCE FROM SI1-XGEX SI SUPERLATTICES/, Journal of crystal growth, 127(1-4), 1993, pp. 472-475
Authors:
ELSAESSER DW
COLON JE
YEO YK
HENGEHOLD RL
EVANS KR
SOLOMON JS
Citation: Dw. Elsaesser et al., ERBIUM COMPLEXES AND DEFECT LEVELS IN MBE-GROWN ERBIUM-DOPED GAAS ANDALGAAS, Journal of crystal growth, 127(1-4), 1993, pp. 707-710
Authors:
COLON JE
ELSAESSER DW
YEO YK
HENGEHOLD RL
POMRENKE GS
Citation: Je. Colon et al., ENHANCEMENT OF THE ER3+ EMISSIONS FROM ALGAASER CODOPED WITH OXYGEN, Applied physics letters, 63(2), 1993, pp. 216-218
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