Authors:
HENRIQUES AB
GONCALVES LCD
OLIVEIRA NF
SHIBLI SM
SOUZA PL
YAVICH B
Citation: Ab. Henriques et al., QUANTUM TRANSPORT IN PERIODICALLY DELTA-DOPED GAAS, Zeitschrift fur Physik. B, Condensed matter, 104(3), 1997, pp. 457-461
Citation: Ab. Henriques et al., DENSITY AND GRAVITON PERTURBATIONS IN THE COSMIC MICROWAVE BACKGROUND, Physical review. D. Particles and fields, 55(10), 1997, pp. 5908-5916
Authors:
YAVICH B
SOUZA PL
PAMPLONAPIRES M
HENRIQUES AB
GONCALVES LCD
Citation: B. Yavich et al., SINGLE AND PERIODICALLY SI DELTA-DOPED INP GROWN BY LP-MOVPE, Semiconductor science and technology, 12(4), 1997, pp. 481-484
Citation: Lcd. Goncalves et Ab. Henriques, ELECTRONIC-PROPERTIES OF GATED DELTA-DOPED SEMICONDUCTORS, Semiconductor science and technology, 12(2), 1997, pp. 203-209
Authors:
GONCALVES LCD
HENRIQUES AB
SOUZA PL
YAVICH B
Citation: Lcd. Goncalves et al., CHARACTERIZATION OF PERIODICALLY DELTA-DOPED SEMICONDUCTORS BY CAPACITANCE-VOLTAGE PROFILING, Semiconductor science and technology, 12(11), 1997, pp. 1455-1458
Authors:
HENRIQUES AB
OBUKHOV S
GONCALVES LCD
SOUZA PL
YAVICH B
Citation: Ab. Henriques et al., BAND-GAP RENORMALIZATION IN PERIODICALLY DELTA-DOPED SEMICONDUCTORS, Physica status solidi. a, Applied research, 164(1), 1997, pp. 133-136
Authors:
SOUZA PL
YAVICH B
PAMPLONAPIRES M
HENRIQUES AB
GONZALES LCD
Citation: Pl. Souza et al., ELECTRONIC AND OPTICAL-PROPERTIES OF PERIODICALLY SI DELTA-DOPED INP GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 82(4), 1997, pp. 1700-1705
Authors:
HENRIQUES AB
GONCALVES LCD
DESOUZA PL
YAVICH B
Citation: Ab. Henriques et al., CHARACTERIZATION OF DELTA-DOPED SUPERLATTICES BY SHUBNIKOV-DE HAAS MEASUREMENTS, Semiconductor science and technology, 11(2), 1996, pp. 190-195
Citation: Ab. Henriques, QUANTUM AND TRANSPORT MOBILITIES IN DELTA-DOPED SEMICONDUCTORS, Physical review. B, Condensed matter, 53(24), 1996, pp. 16365-16371
Citation: Ab. Henriques, THE CLASSICAL TESTS OF COSMOLOGY WITH A SIMPLE KANTOWSKI-SACHS MODEL, Astrophysics and space science, 235(1), 1996, pp. 129-140
Citation: Le. Mendes et al., EXACT CALCULATION OF THE ENERGY DENSITY OF COSMOLOGICAL GRAVITATIONAL-WAVES, Physical review. D. Particles and fields, 52(4), 1995, pp. 2083-2088
Citation: Ab. Henriques, TIGHT-BINDING MODEL FOR THE TRANSVERSE SHUBNIKOV-DE HAAS EFFECT IN SEMICONDUCTOR SUPERLATTICES, Physical review. B, Condensed matter, 50(12), 1994, pp. 8658-8662
Citation: Ab. Henriques et Lcd. Goncalves, CROSSOVER FROM A 2-DIMENSIONAL TO 3-DIMENSIONAL ELECTRONIC-STRUCTURE IN SI SPIKE DOPED GAAS SUPERLATTICES, Surface science, 305(1-3), 1994, pp. 343-347
Citation: Ab. Henriques et Le. Mendes, AN INFLATIONARY BIANCHI-V MODEL WITH SHEAR AND ROTATION, General relativity and gravitation, 26(1), 1994, pp. 61-73
Citation: Ab. Henriques et Lcd. Goncalves, THEORETICAL INVESTIGATION OF THE PHOTOLUMINESCENCE AND FERMI-SURFACE OF PERIODICALLY DELTA-DOPED GAAS, Semiconductor science and technology, 8(4), 1993, pp. 585-589
Authors:
SHIBLI SM
HENRIQUES AB
MENDONCA CAC
DASILVA ECF
MENESES EA
SCOLFARO LMR
LEITE JR
Citation: Sm. Shibli et al., ELECTRONIC-PROPERTIES OF MULTIPLE SI DELTA-DOPED GAAS-LAYERS GROWN BYMOLECULAR-BEAM EPITAXY AND MIGRATION-ENHANCED EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 700-702