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Results: 1-13 |
Results: 13
DYNAMICAL DENSITY-MATRIX THEORY OF MULTIPHOTON TRANSITIONS IN SEMICONDUCTORS
Authors: SELBMANN PE DUPERTUIS MA HAACKE S HESSLER T PLEUMEEKERS JL DEVEAUD B
Citation: Pe. Selbmann et al., DYNAMICAL DENSITY-MATRIX THEORY OF MULTIPHOTON TRANSITIONS IN SEMICONDUCTORS, Physica status solidi. b, Basic research, 206(1), 1998, pp. 219-226
LONGITUDINAL SPATIAL HOLE-BURNING AND ASSOCIATED NONLINEAR GAIN IN GAIN-CLAMPED SEMICONDUCTOR OPTICAL AMPLIFIERS
Authors: PLEUMEEKERS JL DUPERTUIS MA HESSLER T SELBMANN PE HAACKE S DEVEAUD B
Citation: Jl. Pleumeekers et al., LONGITUDINAL SPATIAL HOLE-BURNING AND ASSOCIATED NONLINEAR GAIN IN GAIN-CLAMPED SEMICONDUCTOR OPTICAL AMPLIFIERS, IEEE journal of quantum electronics, 34(5), 1998, pp. 879-886
ANALYSIS AND OPTIMIZATION OF FABRICATION OF CONTINUOUS-RELIEF DIFFRACTIVE OPTICAL-ELEMENTS
Authors: HESSLER T ROSSI M KUNZ RE GALE MT
Citation: T. Hessler et al., ANALYSIS AND OPTIMIZATION OF FABRICATION OF CONTINUOUS-RELIEF DIFFRACTIVE OPTICAL-ELEMENTS, Applied optics, 37(19), 1998, pp. 4069-4079
TIME-RESOLVED RELAXATION OSCILLATIONS IN GAIN-CLAMPED SEMICONDUCTOR OPTICAL AMPLIFIERS BY PUMP AND PROBE MEASUREMENTS
Authors: HESSLER T HAACKE S PLEUMEEKERS JL SELBMANN PE DUPERTUIS MA DEVEAUD B TAYLOR RA DOUSSIERE P BACHMANN M DUCELLIER T EMERY JY
Citation: T. Hessler et al., TIME-RESOLVED RELAXATION OSCILLATIONS IN GAIN-CLAMPED SEMICONDUCTOR OPTICAL AMPLIFIERS BY PUMP AND PROBE MEASUREMENTS, Quantum and semiclassical optics, 9(5), 1997, pp. 675-679
RELAXED FABRICATION TOLERANCES FOR LOW-FRESNEL-NUMBER LENSES
Authors: HESSLER T KUNZ RE
Citation: T. Hessler et Re. Kunz, RELAXED FABRICATION TOLERANCES FOR LOW-FRESNEL-NUMBER LENSES, Journal of the Optical Society of America. A, Optics, image science,and vision., 14(7), 1997, pp. 1599-1606
MICROLENS ARRAYS WITH SPATIAL VARIATION OF THE OPTICAL FUNCTIONS
Authors: HESSLER T ROSSI M PEDERSEN J GALE MT WEGNER M STEUDLE D TIZIANI HJ
Citation: T. Hessler et al., MICROLENS ARRAYS WITH SPATIAL VARIATION OF THE OPTICAL FUNCTIONS, Pure and applied optics, 6(6), 1997, pp. 673-681
A MICROLENS-ARRAY-BASED OPTICAL NEURAL-NETWORK APPLICATION
Authors: BERGER C COLLINGS N VOLKEL R GALE MT HESSLER T
Citation: C. Berger et al., A MICROLENS-ARRAY-BASED OPTICAL NEURAL-NETWORK APPLICATION, Pure and applied optics, 6(6), 1997, pp. 683-689
DIRECT OBSERVATION IN THE TEMPORAL DOMAIN OF RELAXATION OSCILLATIONS IN A SEMICONDUCTOR-LASER
Authors: HESSLER T HAACKE S PLEUMEEKERS JL SELBMANN PE DUPERTUIS MA DEVEAUD B DOUSSIERE P BACHMANN M EMERY JY DUCELLIER T TAYLOR RA
Citation: T. Hessler et al., DIRECT OBSERVATION IN THE TEMPORAL DOMAIN OF RELAXATION OSCILLATIONS IN A SEMICONDUCTOR-LASER, Physica status solidi. b, Basic research, 204(1), 1997, pp. 574-576
MICROLENS ARRAYS FOR CONFOCAL MICROSCOPY
Authors: TIZIANI HJ ACHI R KRAMER RN HESSLER T GALE MT ROSSI M KUNZ RE
Citation: Hj. Tiziani et al., MICROLENS ARRAYS FOR CONFOCAL MICROSCOPY, Optics and Laser Technology, 29(2), 1997, pp. 85-91
RELATIONSHIP BETWEEN PROFILE OF STRESS-GENERATED INTERFACE TRAPS AND DEGRADATION OF SUBMICRON LDD MOSFET
Authors: OKHONIN S HESSLER T DUTOIT M
Citation: S. Okhonin et al., RELATIONSHIP BETWEEN PROFILE OF STRESS-GENERATED INTERFACE TRAPS AND DEGRADATION OF SUBMICRON LDD MOSFET, Microelectronics and reliability, 36(11-12), 1996, pp. 1671-1674
COMPARISON OF GATE-INDUCED DRAIN LEAKAGE AND CHARGE-PUMPING MEASUREMENTS FOR DETERMINING LATERAL INTERFACE-TRAP PROFILES IN ELECTRICALLY STRESSED MOSFETS
Authors: OKHONIN S HESSLER T DUTOIT M
Citation: S. Okhonin et al., COMPARISON OF GATE-INDUCED DRAIN LEAKAGE AND CHARGE-PUMPING MEASUREMENTS FOR DETERMINING LATERAL INTERFACE-TRAP PROFILES IN ELECTRICALLY STRESSED MOSFETS, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 605-612
SPATIAL-DISTRIBUTION OF INTERFACE TRAPS AFTER HOT-CARRIER STRESS FROMFORWARD GIDL MEASUREMENTS
Authors: OKHONIN S HESSLER T DUTOIT M
Citation: S. Okhonin et al., SPATIAL-DISTRIBUTION OF INTERFACE TRAPS AFTER HOT-CARRIER STRESS FROMFORWARD GIDL MEASUREMENTS, Microelectronic engineering, 28(1-4), 1995, pp. 261-264
CHARACTERIZATION OF HIGH-DENSITY ARRAYS OF QUANTUM WIRES BY PHOTOLUMINESCENCE AND TEM
Authors: ROBADEY J MARTI U FILIPOWITZ F HESSLER T MARTIN D MORIERGENOUD F SILVA PC MAGNENAT Y REINHART FK JOUNEAU PH BOBARD F
Citation: J. Robadey et al., CHARACTERIZATION OF HIGH-DENSITY ARRAYS OF QUANTUM WIRES BY PHOTOLUMINESCENCE AND TEM, Helvetica Physica Acta, 67(7), 1994, pp. 773-774
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