Authors:
STINE BE
OUMA DO
DIVECHA RR
BONING DS
CHUNG JE
HETHERINGTON DL
HARWOOD CR
NAKAGAWA OS
OH SY
Citation: Be. Stine et al., RAPID CHARACTERIZATION AND MODELING OF PATTERN-DEPENDENT VARIATION INCHEMICAL-MECHANICAL POLISHING, IEEE transactions on semiconductor manufacturing, 11(1), 1998, pp. 129-140
Authors:
SHUL RJ
LOVEJOY ML
HETHERINGTON DL
RIEGER DJ
KLEM JF
MELLOCH MR
Citation: Rj. Shul et al., PLASMA-INDUCED DAMAGE OF GAAS PN-JUNCTION DIODES USING ELECTRON-CYCLOTRON-RESONANCE GENERATED CL-2 AR, BCL3/AR, CL-2/BCL3/AR, AND SICL4/AR PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 27-33
Citation: Mr. Shaneyfelt et al., RADIATION-INDUCED DEFECTS IN CHEMICAL-MECHANICAL POLISHED MOS OXIDES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1725-1730
Authors:
SHUL RJ
LOVEJOY ML
HETHERINGTON DL
RIEGER DJ
VAWTER GA
KLEM JF
MELLOCH MR
Citation: Rj. Shul et al., INVESTIGATION OF PLASMA ETCH INDUCED DAMAGE IN COMPOUND SEMICONDUCTOR-DEVICES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1351-1355