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Results:
1-14
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Results: 14
Authors:
HINGERL K
YASUDA T
HANADA T
MIWA S
KIMURA K
OHTAKE A
YAO T
Citation: K. Hingerl et al., IN-SITU DETERMINATION OF INPLANE STRAIN ANISOTROPY IN ZNSE(001) GAAS LAYERS USING REFLECTANCE DIFFERENCE SPECTROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2342-2349
Authors:
SCHMID MR
HINGERL K
STIFTER D
BONANNI A
SITTER H
Citation: Mr. Schmid et al., ASSIGNMENT OF REFLECTANCE DIFFERENCE SPECTROSCOPY PEAKS TO II-VI SURFACE-LAYERS, Journal of crystal growth, 185, 1998, pp. 218-222
Authors:
STIFTER D
HEISS W
BONANNI A
PRECHTL G
SCHMID M
HINGERL K
SEYRINGER H
SITTER H
LIU J
GORNIK E
TOTH L
BARNA A
Citation: D. Stifter et al., MOLECULAR-BEAM EPITAXY OF ZNCDSE ZNSE WIRES ON PATTERNED GAAS SUBSTRATES/, Journal of crystal growth, 185, 1998, pp. 347-351
Authors:
BONANNI A
HEISS W
PRECHTL G
STIFTER D
SCHMID M
HINGERL K
JANTSCH W
SITTER H
TOTH L
BARNA A
Citation: A. Bonanni et al., MNTE FRACTIONAL MONOLAYERS IN CDTE CDMGTE HETEROSTRUCTURES - A COMPARATIVE-STUDY OF MAGNETIC POLARONS/, Journal of crystal growth, 185, 1998, pp. 921-925
Authors:
BONANNI A
HEISS W
PRECHTL G
STIFTER D
JANTSCH W
SITTER H
SCHMID M
HINGERL K
Citation: A. Bonanni et al., MAGNETOOPTICAL SPECTROSCOPY ON DIGITAL MAGNETIC HETEROSTRUCTURES, Physica status solidi. a, Applied research, 164(1), 1997, pp. 331-334
Authors:
PHILIPS BA
KAMIYA I
HINGERL K
FLOREZ LT
ASPNES DE
MAHAJAN S
HARBISON JP
Citation: Ba. Philips et al., REAL-TIME OBSERVATION OF ATOMIC ORDERING IN (001) IN0.53GA0.47AS EPITAXIAL LAYERS, Physical review letters, 74(18), 1995, pp. 3640-3643
Authors:
PLOTZ WM
HINGERL K
SITTER H
Citation: Wm. Plotz et al., MONTE-CARLO SIMULATION OF ATOMIC LAYER EPITAXY, Semiconductor science and technology, 9(12), 1994, pp. 2224-2228
Authors:
HINGERL K
ASPNES DE
KAMIYA I
Citation: K. Hingerl et al., COMPARISON OF REFLECTANCE DIFFERENCE SPECTROSCOPY AND SURFACE PHOTOABSORPTION USED FOR THE INVESTIGATION OF ANISOTROPIC SURFACES, Surface science, 287, 1993, pp. 686-692
Authors:
PAULI H
HINGERL K
ABRAMOF E
SITTER H
ZAJICEK H
LISCHKA K
Citation: H. Pauli et al., P-TYPE CDTE EPILAYERS GROWN BY HOT-WALL-BEAM EPITAXY, Journal of applied physics, 73(8), 1993, pp. 4061-4063
Authors:
HINGERL K
ASPNES DE
KAMIYA I
FLOREZ LT
Citation: K. Hingerl et al., RELATIONSHIP AMONG REFLECTANCE-DIFFERENCE SPECTROSCOPY, SURFACE PHOTOABSORPTION, AND SPECTROELLIPSOMETRY, Applied physics letters, 63(7), 1993, pp. 885-887
Authors:
HINGERL K
SITTER H
LILJA J
KUUSISTO E
IMAI K
PESSA M
KUDLEK G
GUTOWSKI J
Citation: K. Hingerl et al., ELECTRICAL AND OPTICAL-PROPERTIES OF LI-DOPED MBE-GROWN P-TYPE ZNSE FILMS, Semiconductor science and technology, 6(9A), 1991, pp. 72-75
Authors:
ABRAMOF E
HINGERL K
PESEK A
SITTER H
Citation: E. Abramof et al., X-RAY ROCKING CURVE CHARACTERIZATION OF ZNTE LAYERS GROWN ON GAAS BY HOT-WALL EPITAXY, Semiconductor science and technology, 6(9A), 1991, pp. 80-82
Authors:
KUDLEK G
PRESSER N
GUTOWSKI J
HINGERL K
ABRAMOF E
SITTER H
Citation: G. Kudlek et al., PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY OF ZNTE GAAS EPILAYERS GROWN BY HOT-WALL EPITAXY/, Semiconductor science and technology, 6(9A), 1991, pp. 90-95
Authors:
PESEK A
HINGERL K
RIESZ F
LISCHKA K
Citation: A. Pesek et al., LATTICE MISFIT AND RELATIVE TILT OF LATTICE PLANES IN SEMICONDUCTOR HETEROSTRUCTURES, Semiconductor science and technology, 6(7), 1991, pp. 705-708
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1-14
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