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Results:
1-14
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Results: 14
Authors:
KONDO S
DEGUCHI O
HINODE K
Citation: S. Kondo et al., FAST ELECTROMIGRATION LIFETIME PREDICTION OF AL-BASED LAYERED METALLIZATION USING THE SIMILARITY OF RESISTANCE INCREASE CURVE, JPN J A P 1, 36(4A), 1997, pp. 2077-2084
Authors:
MIYAZAKI H
TAKEDA K
SAKUMA N
KONDO S
HOMMA Y
HINODE K
Citation: H. Miyazaki et al., COPPER DRY-ETCHING WITH PRECISE WAFER-TEMPERATURE CONTROL USING CL-2 GAS AS A SINGLE REACTANT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 237-240
Authors:
HINODE K
HOMMA Y
HORIUCHI M
TAKAHASHI T
Citation: K. Hinode et al., MORPHOLOGY-DEPENDENT OXIDATION BEHAVIOR OF REACTIVELY SPUTTERED TITANIUM-NITRIDE FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2017-2022
Authors:
MIYAZAKI H
KOJIMA H
HINODE K
Citation: H. Miyazaki et al., PASSIVATION EFFECT OF SILICON-NITRIDE AGAINST COPPER DIFFUSION, Journal of applied physics, 81(12), 1997, pp. 7746-7750
Authors:
MIYAKE T
PETEK H
TAKEDA K
HINODE K
Citation: T. Miyake et al., ATOMIC-HYDROGEN ENHANCED REFLOW OF COPPER, Applied physics letters, 70(10), 1997, pp. 1239-1241
Authors:
MIYAZAKI H
HINODE K
HOMMA Y
KOBAYASHI N
Citation: H. Miyazaki et al., TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF INTERLEVEL DIELECTRICS FOR COPPER METALLIZATION, JPN J A P 1, 35(3), 1996, pp. 1685-1689
Authors:
HINODE K
KONDO S
DEGUCHI O
Citation: K. Hinode et al., NUMBER OF VOIDS FORMED ON A LINE - PARAMETER FOR ELECTROMIGRATION LIFETIME, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 687-690
Authors:
HINODE K
HOMMA Y
SASAKI Y
Citation: K. Hinode et al., WHISKERS GROWN ON ALUMINUM THIN-FILMS DURING HEAT-TREATMENTS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2570-2576
Authors:
KONDO S
OGASAWARA K
HINODE K
Citation: S. Kondo et al., THERMOGRAPHIC ANALYSIS OF ELECTROMIGRATION PHENOMENA IN ALUMINUM METALLIZATION, Journal of applied physics, 79(2), 1996, pp. 736-741
Authors:
TAKEDA E
IKUZAKI K
KATTO H
OHJI Y
HINODE K
HAMADA A
SAKUTA T
FUNABIKI T
SASAKI T
Citation: E. Takeda et al., VLSI RELIABILITY CHALLENGES - FROM DEVICE PHYSICS TO WAFER-SCALE SYSTEMS, Microelectronics and reliability, 35(3), 1995, pp. 325-363
Authors:
KONDO S
DEGUCHI O
HINODE K
Citation: S. Kondo et al., EFFECTS OF GRAIN-SIZE AND PREFERRED ORIENTATION ON THE ELECTROMIGRATION LIFETIME OF AL-BASED LAYERED METALLIZATION, Journal of applied physics, 78(11), 1995, pp. 6534-6538
Authors:
KONDO S
HINODE K
Citation: S. Kondo et K. Hinode, HIGH-RESOLUTION TEMPERATURE-MEASUREMENT OF VOID DYNAMICS INDUCED BY ELECTROMIGRATION IN ALUMINUM METALLIZATION, Applied physics letters, 67(11), 1995, pp. 1606-1608
Authors:
HINODE K
FURUSAWA T
HOMMA Y
Citation: K. Hinode et al., DEPENDENCE OF ELECTROMIGRATION DAMAGE ON CURRENT-DENSITY, Journal of applied physics, 74(1), 1993, pp. 201-206
Authors:
TAKEDA E
IKUZAKI K
KATTO H
OHJI Y
HINODE K
HAMADA A
SAKUTA T
FUNABIKI T
SASAKI T
Citation: E. Takeda et al., VLSI RELIABILITY CHALLENGES - FROM DEVICE PHYSICS TO WAFER-SCALE SYSTEMS, Proceedings of the IEEE, 81(5), 1993, pp. 653-674
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1-14
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