ACNP - Italian Periodicals Catalogue

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Results: 1-19 |

Results: 19

EFFECTS OF POSTANNEALING TEMPERATURES AND AMBIENT ATMOSPHERES ON THE ELECTRICAL-PROPERTIES OF ULTRATHIN (BA,SR)TIO3 CAPACITORS

Authors: CHEN PC MIKI H SHIMAMOTO Y MATSUI Y HIRATANI M FUJISAKI Y

Citation: Pc. Chen et al., EFFECTS OF POSTANNEALING TEMPERATURES AND AMBIENT ATMOSPHERES ON THE ELECTRICAL-PROPERTIES OF ULTRATHIN (BA,SR)TIO3 CAPACITORS, JPN J A P 1, 37(9B), 1998, pp. 5112-5117

INTERFACIAL REACTION OF SRRUO3 PREPARED DIRECTLY ON TIN

Authors: HIRATANI M OKAZAKI C TAKAGI K

Citation: M. Hiratani et al., INTERFACIAL REACTION OF SRRUO3 PREPARED DIRECTLY ON TIN, JPN J A P 1, 37(3A), 1998, pp. 938-941

THERMAL-STABILITY OF PT BOTTOM ELECTRODES FOR FERROELECTRIC CAPACITORS

Authors: MATSUI Y HIRATANI M KUMAGAI Y MIURA H FUJISAKI Y

Citation: Y. Matsui et al., THERMAL-STABILITY OF PT BOTTOM ELECTRODES FOR FERROELECTRIC CAPACITORS, JPN J A P 2, 37(4B), 1998, pp. 465-467

ATAXIA-TELANGIECTASIA IN THE JAPANESE POPULATION - IDENTIFICATION OF R1917X, W2491R, R2909G, IVS33-]A, AND 7883DEL5, THE LATTER 2 BEING RELATIVELY COMMON MUTATIONS(2T)

Authors: FUKAO T SONG XQ YOSHIDA T TASHITA H KANEKO H TERAMOTO T INOUE R KATAMURA K MAYUMI M HIRATANI M TANIGUCHI N ARAI J WAKIGUCHI H BARSHIRA A SHILOH Y KONDO N

Citation: T. Fukao et al., ATAXIA-TELANGIECTASIA IN THE JAPANESE POPULATION - IDENTIFICATION OF R1917X, W2491R, R2909G, IVS33-]A, AND 7883DEL5, THE LATTER 2 BEING RELATIVELY COMMON MUTATIONS(2T), Human mutation, 12(5), 1998, pp. 338-343

LATTICE BENDING APPEARING IN TRANSMISSION ELECTRON-MICROSCOPE VIEW - THE STRAIN RELEASE IN THE HETEROEPITAXIAL STRUCTURE OF THE HOBA2CU3OY PRBA2CU3OY/SRTIO3(110) SUBSTRATE/

Authors: HIRATANI M TARUTANI Y TAKAGI K

Citation: M. Hiratani et al., LATTICE BENDING APPEARING IN TRANSMISSION ELECTRON-MICROSCOPE VIEW - THE STRAIN RELEASE IN THE HETEROEPITAXIAL STRUCTURE OF THE HOBA2CU3OY PRBA2CU3OY/SRTIO3(110) SUBSTRATE/, Physica. C, Superconductivity, 294(1-2), 1998, pp. 90-96

HETEROEPITAXIAL PBZR0.48TI0.52O3 CAPACITORS WITH OXIDE ELECTRODES

Authors: SUGA M HIRATANI M OKAZAKI C KOGUCHI M KAKIBAYASHI H

Citation: M. Suga et al., HETEROEPITAXIAL PBZR0.48TI0.52O3 CAPACITORS WITH OXIDE ELECTRODES, IEICE transactions on electronics, E81C(4), 1998, pp. 523-527

ANOMALOUS HALL RESISTIVITIES OF SINGLE-CRYSTAL FE16N2 AND FE-N MARTENSITE FILMS EPITAXIALLY GROWN BY MOLECULAR-BEAM EPITAXY

Authors: TAKAHASHI H KOMURO M HIRATANI M IGARASHI M SUGITA Y

Citation: H. Takahashi et al., ANOMALOUS HALL RESISTIVITIES OF SINGLE-CRYSTAL FE16N2 AND FE-N MARTENSITE FILMS EPITAXIALLY GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 84(3), 1998, pp. 1493-1498

FABRICATION OF PB(ZR,TI)O-3 MICROSCOPIC CAPACITORS BY ELECTRON-BEAM LITHOGRAPHY

Authors: HIRATANI M OKAZAKI C HASEGAWA H SUGII N TARUTANI Y TAKAGI K

Citation: M. Hiratani et al., FABRICATION OF PB(ZR,TI)O-3 MICROSCOPIC CAPACITORS BY ELECTRON-BEAM LITHOGRAPHY, JPN J A P 1, 36(8), 1997, pp. 5219-5220

OXYGEN DIFFUSION IN PT BOTTOM ELECTRODES OF FERROELECTRIC CAPACITORS

Authors: MATSUI Y SUGA M HIRATANI M MIKI H FUJISAKI Y

Citation: Y. Matsui et al., OXYGEN DIFFUSION IN PT BOTTOM ELECTRODES OF FERROELECTRIC CAPACITORS, JPN J A P 2, 36(9AB), 1997, pp. 1239-1241

CHARACTERIZATION OF HETEROEPITAXIAL PZT CAPACITOR

Authors: SUGA M HIRATANI M OKAZAKI C KOGUCHI M KAKIBAYASHI H

Citation: M. Suga et al., CHARACTERIZATION OF HETEROEPITAXIAL PZT CAPACITOR, Integrated ferroelectrics, 18(1-4), 1997, pp. 389-396

ANALYSIS AND CONTROL OF SURFACE DEGENERATED LAYERS GROWN ON THIN PB(ZR, TI)O-3 FILMS

Authors: FUJISAKI Y TORII K HIRATANI M KUSHIDAABDELGHAFAR K

Citation: Y. Fujisaki et al., ANALYSIS AND CONTROL OF SURFACE DEGENERATED LAYERS GROWN ON THIN PB(ZR, TI)O-3 FILMS, Applied surface science, 108(3), 1997, pp. 365-369

SRRUO3 THIN-FILMS GROWN UNDER REDUCED OXYGEN-PRESSURE

Authors: HIRATANI M OKAZAKI C IMAGAWA K TAKAGI K

Citation: M. Hiratani et al., SRRUO3 THIN-FILMS GROWN UNDER REDUCED OXYGEN-PRESSURE, JPN J A P 1, 35(12A), 1996, pp. 6212-6216

PT TIN ELECTRODES FOR STACKED MEMORY WITH POLYSILICON PLUG UTILIZING PZT FILMS/

Authors: KUSHIDAABDELGHAFAR K HIRATANI M TORII K FUJISAKI Y

Citation: K. Kushidaabdelghafar et al., PT TIN ELECTRODES FOR STACKED MEMORY WITH POLYSILICON PLUG UTILIZING PZT FILMS/, Integrated ferroelectrics, 13(1-3), 1996, pp. 405-411

ORIENTATION AND CRYSTAL-STRUCTURE OF SRTIO3 THIN-FILMS PREPARED BY PULSED-LASER DEPOSITION

Authors: HIRATANI M IMAGAWA K TAKAGI K

Citation: M. Hiratani et al., ORIENTATION AND CRYSTAL-STRUCTURE OF SRTIO3 THIN-FILMS PREPARED BY PULSED-LASER DEPOSITION, JPN J A P 1, 34(1), 1995, pp. 254-260

THE PREVALENCE OF RETT-SYNDROME IN FUKUI PREFECTURE

Authors: TERAI K MUNESUE T HIRATANI M JIANG ZY JIBIKI I YAMAGUCHI N

Citation: K. Terai et al., THE PREVALENCE OF RETT-SYNDROME IN FUKUI PREFECTURE, Brain & development, 17(2), 1995, pp. 153-154

INSUFFICIENT OXIDATION IN PULSED-LASER DEPOSITION

Authors: HIRATANI M IMAGAWA K TAKAGI K

Citation: M. Hiratani et al., INSUFFICIENT OXIDATION IN PULSED-LASER DEPOSITION, Journal of applied physics, 78(6), 1995, pp. 4258-4260

TRANSPORT CHARACTERISTICS OF 1-2-3 TYPE OXIDE S-N-S JUNCTIONS

Authors: TARUTANI Y FUKAZAWA T KABASAWA U TSUKAMOTO A HIRATANI M OKAMOTO M TAKAGI K

Citation: Y. Tarutani et al., TRANSPORT CHARACTERISTICS OF 1-2-3 TYPE OXIDE S-N-S JUNCTIONS, Applied superconductivity, 1(10-12), 1993, pp. 1645-1651

GROWTH OF SRTIO3 THIN-FILMS BY PULSED-LASER DEPOSITION

Authors: HIRATANI M TARUTANI Y FUKAZAWA T OKAMOTO M TAKAGI K

Citation: M. Hiratani et al., GROWTH OF SRTIO3 THIN-FILMS BY PULSED-LASER DEPOSITION, Thin solid films, 227(1), 1993, pp. 100-104

EFFECT OF OXIDIZING ACTIVITY ON THE LOW-TEMPERATURE GROWTH OF HOBA2CU3OX THIN-FILMS

Authors: TSUKAMOTO A HIRATANI M AKAMATSU S

Citation: A. Tsukamoto et al., EFFECT OF OXIDIZING ACTIVITY ON THE LOW-TEMPERATURE GROWTH OF HOBA2CU3OX THIN-FILMS, Applied physics letters, 62(26), 1993, pp. 3516-3518

Risultati: 1-19 |