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Results: 1-17 |
Results: 17
MINIATURE TUNNEL JUNCTION BY ELECTRON-BEAM-INDUCED DEPOSITION
Authors: KOMURO M HIROSHIMA H TAKECHI A
Citation: M. Komuro et al., MINIATURE TUNNEL JUNCTION BY ELECTRON-BEAM-INDUCED DEPOSITION, Nanotechnology, 9(2), 1998, pp. 104-107
FABRICATION OF CONDUCTIVE WIRES BY ELECTRON-BEAM-INDUCED DEPOSITION
Authors: HIROSHIMA H KOMURO M
Citation: H. Hiroshima et M. Komuro, FABRICATION OF CONDUCTIVE WIRES BY ELECTRON-BEAM-INDUCED DEPOSITION, Nanotechnology, 9(2), 1998, pp. 108-112
THE USE OF A SI-BASED RESIST SYSTEM AND TI ELECTRODE FOR THE FABRICATION OF SUB-10 NM METAL-INSULATOR-METAL TUNNEL-JUNCTIONS
Authors: WADA T HARAICHI S ISHII K HIROSHIMA H KOMURO M GORWADKAR SM
Citation: T. Wada et al., THE USE OF A SI-BASED RESIST SYSTEM AND TI ELECTRODE FOR THE FABRICATION OF SUB-10 NM METAL-INSULATOR-METAL TUNNEL-JUNCTIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1430-1434
HIGH GROWTH-RATE FOR SLOW SCANNING IN ELECTRON-BEAM-INDUCED DEPOSITION
Authors: HIROSHIMA H KOMURO M
Citation: H. Hiroshima et M. Komuro, HIGH GROWTH-RATE FOR SLOW SCANNING IN ELECTRON-BEAM-INDUCED DEPOSITION, JPN J A P 1, 36(12B), 1997, pp. 7686-7690
ELECTRON-BEAM ASSISTED CHEMICAL ETCHING OF SINGLE-CRYSTAL DIAMOND SUBSTRATES WITH HYDROGEN GAS
Authors: TANIGUCHI J MIYAMOTO I OHNO N KANTANI K KOMURO M HIROSHIMA H
Citation: J. Taniguchi et al., ELECTRON-BEAM ASSISTED CHEMICAL ETCHING OF SINGLE-CRYSTAL DIAMOND SUBSTRATES WITH HYDROGEN GAS, JPN J A P 1, 36(12B), 1997, pp. 7691-7695
LATERAL TUNNEL JUNCTION PRODUCED BY ELECTRON-BEAM-INDUCED DEPOSITION
Authors: KOMURO M HIROSHIMA H
Citation: M. Komuro et H. Hiroshima, LATERAL TUNNEL JUNCTION PRODUCED BY ELECTRON-BEAM-INDUCED DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2809-2815
ELECTRON-BEAM DOT LITHOGRAPHY FOR NANOMETER-SCALE TUNNEL-JUNCTIONS USING A DOUBLE-LAYERED INORGANIC RESIST
Authors: HARAICHI S WADA T GORWADKAR SM ISHII K HIROSHIMA H
Citation: S. Haraichi et al., ELECTRON-BEAM DOT LITHOGRAPHY FOR NANOMETER-SCALE TUNNEL-JUNCTIONS USING A DOUBLE-LAYERED INORGANIC RESIST, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1406-1410
FABRICATION AND PROPERTIES OF DOT ARRAY USING ELECTRON-BEAM-INDUCED DEPOSITION
Authors: KOMURO M HIROSHIMA H
Citation: M. Komuro et H. Hiroshima, FABRICATION AND PROPERTIES OF DOT ARRAY USING ELECTRON-BEAM-INDUCED DEPOSITION, Microelectronic engineering, 35(1-4), 1997, pp. 273-276
DIAMETER DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF ULTRASMALL AREA ALSB-INAS RESONANT-TUNNELING DIODES WITH DIAMETERS DOWN TO 20 NM
Authors: NOMOTO K TAIRA K SUZUKI T HASE I HIROSHIMA H KOMURO M
Citation: K. Nomoto et al., DIAMETER DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF ULTRASMALL AREA ALSB-INAS RESONANT-TUNNELING DIODES WITH DIAMETERS DOWN TO 20 NM, Applied physics letters, 70(15), 1997, pp. 2025-2027
FABRICATION OF HIGH-RESOLUTION FRESNEL ZONE PLATES BY A SINGLE-LAYER RESIST PROCESS
Authors: HIROSHIMA H KOMURO M GENTILI M GRELLA L DIFABRIZIO E MAGGIORA R
Citation: H. Hiroshima et al., FABRICATION OF HIGH-RESOLUTION FRESNEL ZONE PLATES BY A SINGLE-LAYER RESIST PROCESS, JPN J A P 1, 35(12B), 1996, pp. 6447-6451
SIO2 C-SI BILAYER ELECTRON-BEAM RESIST PROCESS FOR NANO-FABRICATION/
Authors: GORWADKAR SM WADA T HARAICHI S HIROSHIMA H ISHII K KOMURO M
Citation: Sm. Gorwadkar et al., SIO2 C-SI BILAYER ELECTRON-BEAM RESIST PROCESS FOR NANO-FABRICATION/, JPN J A P 1, 35(12B), 1996, pp. 6673-6678
SIO2 POLY-SI ELECTRON-BEAM RESIST PROCESS FOR NANOFABRICATION/
Authors: WADA T HARAICHI S ISHII K HIROSHIMA H KOMURO M HIRAYAMA M
Citation: T. Wada et al., SIO2 POLY-SI ELECTRON-BEAM RESIST PROCESS FOR NANOFABRICATION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1850-1854
ELECTRON-BEAM NANO-FABRICATION BY INORGANIC RESIST FOR MIM TUNNEL JUNCTION
Authors: KOMURO M HIROSHIMA H HARAICHI S ISHII K WADA T OKAYAMA S
Citation: M. Komuro et al., ELECTRON-BEAM NANO-FABRICATION BY INORGANIC RESIST FOR MIM TUNNEL JUNCTION, Microelectronic engineering, 30(1-4), 1996, pp. 411-414
SIO2 POLY-SI MULTILAYERED ELECTRON-BEAM RESIST PROCESS FOR FABRICATION OF ULTRASMALL TUNNEL-JUNCTIONS/
Authors: WADA T HIRAYAMA M HARAICHI S ISHII K HIROSHIMA H KOMURO M
Citation: T. Wada et al., SIO2 POLY-SI MULTILAYERED ELECTRON-BEAM RESIST PROCESS FOR FABRICATION OF ULTRASMALL TUNNEL-JUNCTIONS/, JPN J A P 1, 34(12B), 1995, pp. 6961-6965
NANOBEAM PROCESS SYSTEM - AN ULTRAHIGH-VACUUM ELECTRON-BEAM LITHOGRAPHY SYSTEM WITH 3 NM PROBE SIZE
Authors: HIROSHIMA H OKAYAMA S OGURA M KOMURO M NAKAZAWA H NAKAGAWA Y OHI K TANAKA K
Citation: H. Hiroshima et al., NANOBEAM PROCESS SYSTEM - AN ULTRAHIGH-VACUUM ELECTRON-BEAM LITHOGRAPHY SYSTEM WITH 3 NM PROBE SIZE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2514-2517
ELECTRON-BEAM WRITING AND DIRECT PROCESSING SYSTEM FOR NANOLITHOGRAPHY
Authors: HIROSHIMA H OKAYAMA S OGURA M KOMURO M NAKAZAWA H NAKAGAWA Y OHI K TANAKA K
Citation: H. Hiroshima et al., ELECTRON-BEAM WRITING AND DIRECT PROCESSING SYSTEM FOR NANOLITHOGRAPHY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 363(1-2), 1995, pp. 73-78
CHARACTERISTICS OF SIO2 AS A HIGH-RESOLUTION ELECTRON-BEAM RESIST
Authors: HIROSHIMA H KOMURO M
Citation: H. Hiroshima et M. Komuro, CHARACTERISTICS OF SIO2 AS A HIGH-RESOLUTION ELECTRON-BEAM RESIST, JPN J A P 1, 32(12B), 1993, pp. 6153-6157
Risultati: 1-17 |