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Results:
1-24
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Results: 24
Authors:
CHEN LC
WU MC
HO WJ
Citation: Lc. Chen et al., THERMAL-PROPERTIES OF INAS0.86SB0.05P0.09 HOMOSTRUCTURE DIODES, JPN J A P 1, 37(10), 1998, pp. 5622-5624
Authors:
CHANG PS
CHENG MT
CHU ML
LIU YC
TENG PK
CHANG HL
HO WJ
HWANG CJ
SHI TT
TU YK
WANG C
Citation: Ps. Chang et al., DENSE OPTICAL INTERFACE MODULE FOR SILICON DETECTOR READOUT, Nuclear physics. B, 1998, pp. 360-365
Authors:
LIN MS
HO WJ
SHIH FY
CHEN DY
WU YP
Citation: Ms. Lin et al., A COLD-CATHODE FLUORESCENT LAMP DRIVER CIRCUIT WITH SYNCHRONOUS PRIMARY-SIDE DIMMING CONTROL, IEEE transactions on industrial electronics, 45(2), 1998, pp. 249-255
Authors:
HO WJ
CHANG WT
Citation: Wj. Ho et Wt. Chang, MULTIGRID COMPUTATION FOR CURVE-FITTING IN THE WAVELET DOMAIN, Electronics Letters, 34(5), 1998, pp. 433-434
Authors:
HO WJ
LIO JB
FENG WS
Citation: Wj. Ho et al., ECONOMIC UPS STRUCTURE WITH PHASE-CONTROLLED BATTERY CHARGER AND INPUT-POWER-FACTOR IMPROVEMENT, IEE proceedings. Electric power applications, 144(4), 1997, pp. 221-226
Authors:
HO WJ
WU MC
TU YK
Citation: Wj. Ho et al., UNIFORM AND HIGH-PERFORMANCE OF MONOLITHICALLY INTEGRATED 1X12 ARRAY OF PLANAR GAINAS PHOTODIODES, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 559-564
Authors:
KWON YW
HO WJ
HIGGINS JA
Citation: Yw. Kwon et al., A Q-BAND MONOLITHIC LINEAR-AMPLIFIER USING ALGAAS GAAS HBTS/, IEEE microwave and guided wave letters, 6(4), 1996, pp. 180-182
Authors:
WEI CJ
HWANG JCM
HO WJ
HIGGINS JA
Citation: Cj. Wei et al., LARGE-SIGNAL MODELING OF SELF-HEATING, COLLECTOR TRANSIT-TIME, AND RF-BREAKDOWN EFFECTS IN POWER HBTS, IEEE transactions on microwave theory and techniques, 44(12), 1996, pp. 2641-2647
Authors:
CHEN PF
JOHNSON RA
HO MC
HO WJ
SAILER A
CHANG MF
ASBECK PM
Citation: Pf. Chen et al., MICROWAVE AND THERMAL-CHARACTERISTICS OF BACKSIDE-CONNECTED FLIP-CHIPPOWER HETEROJUNCTION BIPOLAR-TRANSISTORS, Electronics Letters, 32(20), 1996, pp. 1931-1932
Authors:
HO WJ
LIN MS
FENG WS
Citation: Wj. Ho et al., OPTIMIZING SINGLE-PHASE PFC PRE-STAGED AC DC/AC TOPOLOGY VIA COMMON-NEUTRAL CONNECTION/, Electronics Letters, 32(17), 1996, pp. 1529-1530
Authors:
HO WJ
WU MC
DAI TA
LIN W
TU YK
Citation: Wj. Ho et al., HIGHLY UNIFORM MONOLITHIC 1X12 ARRAY OF INGAAS PHOTODIODES, Electronics Letters, 32(1), 1996, pp. 61-62
Authors:
HIGGINS JA
SOVERO EA
HO WJ
Citation: Ja. Higgins et al., 44-GHZ MONOLITHIC PLANE-WAVE AMPLIFIERS, IEEE microwave and guided wave letters, 5(10), 1995, pp. 347-348
Authors:
HO MC
JOHNSON RA
HO WJ
CHANG MF
ASBECK PM
Citation: Mc. Ho et al., HIGH-PERFORMANCE LOW-BASE-COLLECTOR CAPACITANCE ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY DEEP ION-IMPLANTATION/, IEEE electron device letters, 16(11), 1995, pp. 512-514
Authors:
LIU CM
SOVERO EA
HO WJ
HIGGINS JA
RUTLEDGE DB
Citation: Cm. Liu et al., A MILLIMETER-WAVE MONOLITHIC GRID AMPLIFIER, International journal of infrared and millimeter waves, 16(11), 1995, pp. 1901-1909
Authors:
ZAMPARDI PJ
BECCUE SM
YU J
PEDROTTI K
PIERSON RL
HO WJ
CHANG MF
WANG KC
Citation: Pj. Zampardi et al., CIRCUIT DEMONSTRATIONS IN A GAAS BIFET TECHNOLOGY, Solid-state electronics, 38(9), 1995, pp. 1723-1726
Authors:
HO WJ
DAI TA
CHUANG ZM
LIN W
TU YK
WU MC
Citation: Wj. Ho et al., INGAAS PIN PHOTODIODES ON SEMIINSULATING INP SUBSTRATES WITH BANDWIDTH EXCEEDING 14 GHZ, Solid-state electronics, 38(7), 1995, pp. 1295-1298
Authors:
WEI CJ
LAN YE
HWANG JCM
HO WJ
HIGGINS JA
Citation: Cj. Wei et al., WAVE-FORM-BASED MODELING AND CHARACTERIZATION OF MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE transactions on microwave theory and techniques, 43(12), 1995, pp. 2899-2903
Authors:
HO WJ
WU MC
TU YK
SHIH HH
Citation: Wj. Ho et al., HIGH RESPONSIVITY GAINAS PIN PHOTODIODE BY USING ERBIUM GETTERING, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 639-645
Authors:
YU J
BECCUE S
HO WJ
ZAMPARDI P
CHANG MF
WANG KC
Citation: J. Yu et al., 10 BIT 200MSPS GAAS BIFET SAMPLE-AND-HOLD CIRCUIT, Electronics Letters, 31(16), 1995, pp. 1335-1337
Authors:
MARTIN MZ
OSHITA FK
MATLOUBIAN M
FETTERMAN HR
HO WJ
WANG NL
CHANG F
CHEUNG D
Citation: Mz. Martin et al., ELECTRICAL AND OPTICAL-RESPONSE OF A VERY HIGH-FREQUENCY ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR/, Journal of applied physics, 76(6), 1994, pp. 3847-3849
Authors:
WANG NL
HO WJ
HIGGINS JA
Citation: Nl. Wang et al., ALGAAS GAAS HBT LINEARITY CHARACTERISTICS, IEEE transactions on microwave theory and techniques, 42(10), 1994, pp. 1845-1850
Authors:
HO WJ
WU MC
LIN YM
TU YK
Citation: Wj. Ho et al., INGAAS PIN PHOTODIODES GROWN BY LIQUID-PHASE EPITAXY USING ERBIUM GETTERING, Electronics Letters, 30(1), 1994, pp. 83-84
Authors:
HO WJ
CHANG MF
SAILER A
ZAMPARDI P
DEAKIN D
MCDERMOTT B
PIERSON R
HIGGINS JA
WALDROP J
Citation: Wj. Ho et al., GAINP GAAS HBTS FOR HIGH-SPEED INTEGRATED-CIRCUIT APPLICATIONS/, IEEE electron device letters, 14(12), 1993, pp. 572-574
Authors:
HO WJ
CHANG MF
SAILER A
ZAMPARDI P
DEAKIN D
MCDERMOTT B
PIERSON R
HIGGINS JA
Citation: Wj. Ho et al., IIIA-7 GAINP GAAS HBTS FOR HIGH-SPEED INTEGRATED-CIRCUIT APPLICATIONS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2113-2114
Risultati:
1-24
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