Authors: TSUGAWA K NODA H HOKAZONO A KITATANI K MORITA K KAWARADA H

Citation: K. Tsugawa et al., APPLICATION AND DEVICE MODELING OF DIAMOND FET USING SURFACE SEMICONDUCTIVE LAYERS, Electronics & communications in Japan. Part 2, Electronics, 81(7), 1998, pp. 19-27

Authors: KAWARADA H WILD C HERRES N KOIDL P MIZUOCHI Y HOKAZONO A NAGASAWA H

Citation: H. Kawarada et al., SURFACE-MORPHOLOGY AND SURFACE P-CHANNEL FIELD-EFFECT TRANSISTOR ON THE HETEROEPITAXIAL DIAMOND DEPOSITED ON INCLINED BETA-SIC(001) SURFACES, Applied physics letters, 72(15), 1998, pp. 1878-1880

Authors: HOKAZONO A KAWARADA H

Citation: A. Hokazono et H. Kawarada, ENHANCEMENT DEPLETION SURFACE CHANNEL FIELD-EFFECT TRANSISTORS OF DIAMOND AND THEIR LOGIC-CIRCUITS/, JPN J A P 1, 36(12A), 1997, pp. 7133-7139

Authors: NODA H HOKAZONO A KAWARADA H

Citation: H. Noda et al., DEVICE MODELING OF HIGH-PERFORMANCE DIAMOND MESFETS USING P-TYPE SURFACE SEMICONDUCTIVE LAYERS, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 865-868

Authors: HOKAZONO A ISHIKURA T NAKAMURA K YAMASHITA S KAWARADA H

Citation: A. Hokazono et al., ENHANCEMENT DEPLETION MESFETS OF DIAMOND AND THEIR LOGIC-CIRCUITS/, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 339-343

Authors: KAWARADA H ITOH M HOKAZONO A

Citation: H. Kawarada et al., ELECTRICALLY ISOLATED METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND LOGIC-CIRCUITS ON HOMOEPITAXIAL DIAMONDS, JPN J A P 2, 35(9B), 1996, pp. 1165-1168