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Results:
1-13
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Results: 13
Authors:
BURKE TM
RITCHIE DA
LINFIELD EH
OSULLIVAN MP
BURROUGHES JH
LEADBEATER ML
HOLMES SN
NORMAN CE
SHIELDS AJ
Citation: Tm. Burke et al., MOBILITY (10(6) CM(2) V-1 S(-1)) OF 2DEGS, 30 NM FROM EX-SITU PATTERNED GAAS REGROWTH INTERFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 202-206
Authors:
CINA S
ARNONE DD
BURROUGHES JH
HOLMES SN
BURKE T
HUGHES HP
RITCHIE DA
PEPPER M
Citation: S. Cina et al., PLASMONS IN SPATIALLY NONUNIFORM MAGNETIC-FIELDS, Physica. B, Condensed matter, 251, 1998, pp. 286-290
Authors:
AMONE DD
CINA S
BURROUGHES JH
HOLMES SN
BURKE T
HUGHES HP
RITCHIE DA
PEPPER M
Citation: Dd. Amone et al., FAR-INFRARED STUDY OF A LATERALLY CONFINED ELECTRON-GAS FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON A PATTERNED (100)N(-GAAS SUBSTRATE()), Applied physics letters, 71(4), 1997, pp. 497-499
Authors:
BROSH B
SIMMONS MY
HOLMES SN
HAMILTON AR
RITCHIE DA
PEPPER M
Citation: B. Brosh et al., PROBING THE BAND-STRUCTURE OF A 2-DIMENSIONAL HOLE GAS-USING A ONE-DIMENSIONAL SUPERLATTICE, Physical review. B, Condensed matter, 54(20), 1996, pp. 14273-14276
Authors:
NEWMAN RC
ASHWIN MJ
FAHY MR
HART L
HOLMES SN
ROBERTS C
ZHANG X
WAGNER J
Citation: Rc. Newman et al., LATTICE LOCATIONS OF SILICON ATOMS IN DELTA-DOPED LAYERS IN GAAS AT HIGH DOPING CONCENTRATIONS, Physical review. B, Condensed matter, 54(12), 1996, pp. 8769-8781
Authors:
HARRIS JJ
ROBERTS JM
HOLMES SN
WOODBRIDGE K
Citation: Jj. Harris et al., OBSERVATION OF OSCILLATORY LINEWIDTH BEHAVIOR IN THE MAGNETOLUMINESCENCE OF A MODULATION-DOPED INXGA1-XAS QUANTUM-WELL, Physical review. B, Condensed matter, 53(8), 1996, pp. 4886-4890
Authors:
SANDER TH
HOLMES SN
HARRIS JJ
MAUDE DK
PORTAL JC
Citation: Th. Sander et al., MAGNETORESISTANCE OSCILLATIONS DUE TO INTERSUBBAND SCATTERING IN A 2-DIMENSIONAL ELECTRON-SYSTEM, Surface science, 362(1-3), 1996, pp. 564-568
Authors:
MATSUMURA A
FERNANDEZ JM
THORNTON TJ
HOLMES SN
ZHANG J
JOYCE BA
Citation: A. Matsumura et al., MAGNETOTRANSPORT OF 2-DIMENSIONAL ELECTRON-GAS IN SI SIGE MODULATION-DOPED STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Solid-state electronics, 40(1-8), 1996, pp. 399-403
Authors:
MATSUMURA A
FERNANDEZ JM
THORNTON TJ
PRASAD RS
HOLMES SN
ZHANG XM
XIE MH
ZHANG J
JOYCE BA
Citation: A. Matsumura et al., CHARACTERIZATION OF N-CHANNEL SI SIGE MODULATION-DOPED STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 10(9), 1995, pp. 1247-1252
Authors:
HOLMES SN
RILEY JM
JUNEAU P
PYNE D
HOFING GL
Citation: Sn. Holmes et al., SHORT-TERM EVALUATION OF A FORAGING DEVICE FOR NONHUMAN-PRIMATES, Laboratory animals, 29(4), 1995, pp. 364-369
Authors:
MATSUMURA A
THORNTON TJ
FERNANDEZ JM
HOLMES SN
ZHANG J
JOYCE BA
Citation: A. Matsumura et al., ELECTRON HEATING EFFECT ON TRANSPORT-PROPERTIES IN SI SIGE MODULATION-DOPED STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 157(1-4), 1995, pp. 373-377
Authors:
MCELHINNEY M
SKURAS E
HOLMES SN
JOHNSON EA
LONG AR
STANLEY CR
Citation: M. Mcelhinney et al., QUANTUM TRANSPORT MEASUREMENTS ON SI DELTA-DOPED AND SLAB-DOPED IN0.53GA0.47AS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 266-270
Authors:
GLEW RW
ADAMS AR
CROOKES CG
GREENE PD
HOLMES SN
KITCHING SA
KLIPSTEIN PC
LANCEFIELD D
STRADLING RA
WOOLLEY RA
Citation: Rw. Glew et al., HIGH-PURITY INP AND THE ROLE OF HYDROGEN, Semiconductor science and technology, 6(11), 1991, pp. 1088-1092
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