Authors:
HINTERMAIER F
HENDRIX B
DESROCHERS D
ROEDER J
BAUM T
VANBUSKIRK P
BOLTEN D
GROSSMANN M
LOHSE O
SCHUMACHER M
WASER R
CERVA H
DEHM C
FRITSCH E
HONLEIN W
MAZURE C
NAGEL N
THWAITE P
WENDT H
Citation: F. Hintermaier et al., PROPERTIES OF SRBI2TA2O9 THIN-FILMS GROWN BY MOCVD FOR HIGH-DENSITY FERAM APPLICATIONS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 367-379