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Results:
1-10
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Results: 10
Authors:
DELMOTTE F
HUGON MC
AGUIS B
POINTU AM
TEODORU S
Citation: F. Delmotte et al., LANGMUIR PROBE ANALYSIS OF DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE SILICON-NITRIDE DEPOSITION PLASMA, Applied physics letters, 72(12), 1998, pp. 1448-1450
Authors:
DELMOTTE F
HUGON MC
AGIUS B
COURANT JL
Citation: F. Delmotte et al., LOW-TEMPERATURE DEPOSITION OF SINX-H USING SIH4-N-2 OR SIH4-NH3 DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1919-1926
Authors:
HUGON MC
DELMOTTE F
AGIUS B
COURANT JL
Citation: Mc. Hugon et al., ELECTRICAL-PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH SILICON-NITRIDE DIELECTRICS DEPOSITED BY LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 3143-3153
Authors:
BULKIN P
BERTRAND N
DREVILLON B
ROSTAING JC
DELMOTTE F
HUGON MC
AGIUS B
Citation: P. Bulkin et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICA THIN-FILMS IN AN INTEGRATED DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE REACTOR, Thin solid films, 308, 1997, pp. 63-67
Authors:
DUFOURGERGAM E
MEYER F
DELMOTTE F
HUGON MC
AGIUS B
WARREN P
DUTARTRE D
Citation: E. Dufourgergam et al., ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS GROWN ON A SIGE LAYER BY DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 294(1-2), 1997, pp. 214-216
Authors:
FIRON M
HUGON MC
AGIUS B
HU YZ
WANG Y
IRENE EA
Citation: M. Firon et al., COMPARISON OF THE PHYSICAL AND ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE AND DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE SIO2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2543-2549
Authors:
HU YZ
LI M
WANG Y
IRENE EA
HUGON MC
VARNIERE F
JIANG N
FROMENT M
AGIUS B
Citation: Yz. Hu et al., COMPARISON OF DAMAGE AND SI OXIDATION-KINETICS RESULTING FROM ELECTRON-CYCLOTRON-RESONANCE AND DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 227-234
Authors:
SITBON S
HUGON MC
AGIUS B
ABEL F
COURANT JL
PUECH M
Citation: S. Sitbon et al., LOW-TEMPERATURE DEPOSITION OF SILICON-NITRIDE FILMS BY DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2900-2907
Authors:
STROH RJ
PLAIS F
KRETZ T
LEGAGNEUX P
HUET O
MAGIS M
PRIBAT D
JIANG N
HUGON MC
AGIUS B
Citation: Rj. Stroh et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 9-13
Authors:
JIANG N
AGIUS B
HUGON MC
OLIVIER J
PUECH M
Citation: N. Jiang et al., RADIOFREQUENCY BIAS EFFECTS ON SIO2-FILMS DEPOSITED BY DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 76(3), 1994, pp. 1847-1855
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