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Results:
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Results: 25
Authors:
HUMMEL RE
Citation: Re. Hummel, IMPLANTATION DAMAGE AND EPITAXIAL REGROWTH OF SILICON STUDIED BY DIFFERENTIAL REFLECTOMETRY, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 253(1-2), 1998, pp. 50-61
Authors:
HUMMEL RE
SHEPHERD N
LUDWIG MH
STORA ME
Citation: Re. Hummel et al., DOES THE FAST, BLUE PHOTOLUMINESCENCE FROM SPARK-PROCESSED SILICON ORIGINATE FROM TUNGSTEN DOPING, Thin solid films, 325(1-2), 1998, pp. 1-3
Authors:
MALONE DW
HUMMEL RE
Citation: Dw. Malone et Re. Hummel, ELECTROMIGRATION FAILURE OF INTEGRATED-CIRCUIT METALLIZATIONS SUBJECTED TO HIGH-FREQUENCY PULSED CURRENTS, Journal of applied physics, 83(11), 1998, pp. 5750-5760
Authors:
SINGH RK
JUNG SM
LEE SM
HUMMEL RE
Citation: Rk. Singh et al., NOVEL METHOD FOR THE FORMATION OF LARGE-GRAINED, SILICON THIN-FILMS ON AMORPHOUS SUBSTRATES, Journal of the Electrochemical Society, 145(11), 1998, pp. 3963-3966
Authors:
MALONE DW
HUMMEL RE
Citation: Dw. Malone et Re. Hummel, ELECTROMIGRATION IN INTEGRATED-CIRCUITS, Critical reviews in solid state and materials sciences, 22(3), 1997, pp. 199-238
Authors:
KURMAEV EZ
SHAMIN SN
GALAKHOV VR
SOKOLOV VI
LUDWIG MH
HUMMEL RE
Citation: Ez. Kurmaev et al., X-RAY-EMISSION SPECTRA AND THE EFFECT OF OXIDATION ON THE LOCAL-STRUCTURE OF POROUS AND SPARK-PROCESSED SILICON, Journal of physics. Condensed matter, 9(12), 1997, pp. 2671-2681
Authors:
KURMAEV EZ
GALAKHOV VR
SHAMIN SN
SOKOLOV VI
HUMMEL RE
LUDWIG MH
Citation: Ez. Kurmaev et al., LOCAL-STRUCTURE OF POROUS SILICON STUDIED BY MEANS OF X-RAY-EMISSION SPECTROSCOPY, Applied physics A: Materials science & processing, 65(2), 1997, pp. 183-189
Authors:
HUMMEL RE
Citation: Re. Hummel, COMPUTER FAILURES - A NONPROBLEM, MRS bulletin, 22(1), 1997, pp. 4-4
Authors:
LUDWIG MH
AUGUSTIN A
HUMMEL RE
Citation: Mh. Ludwig et al., COLOR-SWITCHING EFFECT OF PHOTOLUMINESCENT SILICON AFTER SPARK-PROCESSING IN OXYGEN, Semiconductor science and technology, 12(8), 1997, pp. 981-986
Authors:
RUPP S
QUILTY J
TRODAHL HJ
LUDWIG MH
HUMMEL RE
Citation: S. Rupp et al., RAMAN-STUDY OF THE RELATIONSHIP BETWEEN NANOPARTICLES AND PHOTOLUMINESCENCE IN SPARK-PROCESSED SILICON, Applied physics letters, 70(6), 1997, pp. 723-725
Authors:
HAGMANN DR
HUMMEL RE
Citation: Dr. Hagmann et Re. Hummel, CHARACTERIZATION OF MULTILAYER THIN-FILM STRUCTURES BY DIFFERENTIAL REFLECTION SPECTROSCOPY, Materials research bulletin, 31(12), 1996, pp. 1449-1461
Authors:
HUMMEL RE
LUDWIG MH
Citation: Re. Hummel et Mh. Ludwig, SPARK-PROCESSING - A NOVEL TECHNIQUE TO PREPARE LIGHT-EMITTING, NANOCRYSTALLINE SILICON, Journal of luminescence, 68(2-4), 1996, pp. 69-76
Authors:
LUDWIG MH
AUGUSTIN A
HUMMEL RE
GROSS T
Citation: Mh. Ludwig et al., ON THE FORMATION PROCESS OF LUMINESCING CENTERS IN SPARK-PROCESSED SILICON, Journal of applied physics, 80(9), 1996, pp. 5318-5324
Authors:
LUDWIG MH
MENNIGER J
HUMMEL RE
Citation: Mh. Ludwig et al., CATHODOLUMINESCING PROPERTIES OF SPARK-PROCESSED SILICON, Journal of physics. Condensed matter, 7(47), 1995, pp. 9081-9089
Authors:
LUDWIG MH
HUMMEL RE
STORA M
Citation: Mh. Ludwig et al., LUMINESCENCE OF SPARK-PROCESSED MATERIALS, Thin solid films, 255(1-2), 1995, pp. 103-106
Authors:
HUMMEL RE
LUDWIG M
CHANG SS
LATORRE G
Citation: Re. Hummel et al., COMPARISON OF ANODICALLY ETCHED POROUS SILICON WITH SPARK-PROCESSED SILICON, Thin solid films, 255(1-2), 1995, pp. 219-223
Authors:
HUMMEL RE
LUDWIG MH
HACK J
CHANG SS
Citation: Re. Hummel et al., DOES THE BLUE VIOLET PHOTOLUMINESCENCE OF SPARK-PROCESSED SILICON ORIGINATE FROM HYDROXYL-GROUPS/, Solid state communications, 96(9), 1995, pp. 683-687
Authors:
HUMMEL RE
LUDWIG MH
CHANG SS
FAUCHET PM
VANDYSHEV JV
TSYBESKOV L
Citation: Re. Hummel et al., TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS IN SPARK-PROCESSED BLUE AND GREEN EMITTING SILICON, Solid state communications, 95(8), 1995, pp. 553-557
Authors:
HUMMEL RE
LUDWIG MH
CHANG SS
Citation: Re. Hummel et al., STRONG, BLUE, ROOM-TEMPERATURE PHOTOLUMINESCENCE OF SPARK-PROCESSED SILICON, Solid state communications, 93(3), 1995, pp. 237-241
Authors:
LUDWIG MH
HUMMEL RE
AUGUSTIN A
HACK J
MENNIGER J
Citation: Mh. Ludwig et al., POSITION-DEPENDENT AND TEMPERATURE-DEPENDENT OPTICAL-PROPERTIES OF SPARK-PROCESSED SILICON, Applied physics letters, 67(17), 1995, pp. 2542-2544
Authors:
LUDWIG MH
HUMMEL RE
CHANG SS
Citation: Mh. Ludwig et al., BRIGHT VISIBLE PHOTOLUMINESCENCE OF SPARK-PROCESSED GE, GAAS, AND SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 3023-3026
Authors:
HUMMEL RE
Citation: Re. Hummel, ELECTROMIGRATION AND RELATED FAILURE MECHANISMS IN INTEGRATED-CIRCUITINTERCONNECTS, International materials reviews, 39(3), 1994, pp. 97-111
Authors:
HUMMEL RE
Citation: Re. Hummel, ELECTROMIGRATION AND RELATED FAILURE MECHANISMS IN INTEGRATED-CIRCUITINTERCONNECTS, International materials reviews, 39(3), 1994, pp. 97-111
Authors:
HUMMEL RE
FENG SW
HAGMANN DR
Citation: Re. Hummel et al., ON THE INITIAL ANNEALING STAGE OF AS+ IMPLANTED SILICON, Zeitschrift fur Metallkunde, 84(5), 1993, pp. 320-323
Authors:
HUMMEL RE
MORRONE A
LUDWIG M
CHANG SS
Citation: Re. Hummel et al., ON THE ORIGIN OF PHOTOLUMINESCENCE IN SPARK-ERODED (POROUS) SILICON, Applied physics letters, 63(20), 1993, pp. 2771-2773
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