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Results: 1-11 |
Results: 11

Authors: LELAY G ARISTOV VY BOSTROM O LAYET JM ASENSIO MC AVILA J HUTTEL Y CRICENTI A
Citation: G. Lelay et al., SURFACE-CHARGE DENSITY WAVES AT SN GE(111), Applied surface science, 123, 1998, pp. 440-444

Authors: HUTTEL Y AVILA J ASENSIO MC BENCOK P RICHTER C ILAKOVAC V HECKMANN O HRICOVINI K
Citation: Y. Huttel et al., AUGER-ELECTRON DIFFRACTION STUDY OF V FE(100) INTERFACE FORMATION/, Surface science, 404(1-3), 1998, pp. 609-613

Authors: ROSSO M HUTTEL Y CHASSAING E SAPOVAL B GUTFRAIND R
Citation: M. Rosso et al., VISUALIZATION OF THE ACTIVE ZONE OF AN IRREGULAR ELECTRODE BY OPTICAL-ABSORPTION, Journal of the Electrochemical Society, 144(5), 1997, pp. 1713-1717

Authors: HUTTEL Y SOUKIASSIAN P MANGAT PS HURYCH Z
Citation: Y. Huttel et al., ANTIMONY ON METAL AND SEMICONDUCTOR SURFACES - INTERFACE FORMATION AND PASSIVATION, Surface science, 352, 1996, pp. 845-849

Authors: HUTTEL Y SOUKIASSIAN P MANGAT PS HURYCH Z
Citation: Y. Huttel et al., INITIAL STEPS OF ALKALI-METAL-PROMOTED OXIDATION OF THE AL(111) SURFACE, Surface review and letters, 2(5), 1995, pp. 549-556

Authors: MANGAT PS HUTTEL Y SCHIRM KM HURYCH Z SOUKIASSIAN P
Citation: Ps. Mangat et al., PHOTOEMISSION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE (PEXAFS) - A NEW APPROACH TO PROBE SURFACE AND INTERFACE ATOMIC GEOMETRY, Journal de physique. IV, 4(C9), 1994, pp. 461-466

Authors: MANGAT PS SOUKIASSIAN P HUTTEL Y HURYCH Z
Citation: Ps. Mangat et al., STRUCTURAL-PROPERTIES OF THE NA SI(111)2X1 SURFACE STUDIED BY PHOTOEMISSION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2694-2698

Authors: MANGAT PS SOUKIASSIAN P HUTTEL Y GRUZZA B PORTE A
Citation: Ps. Mangat et al., SB-INDUCED INTERATOMIC BOND DISTANCE STABILIZATION ON INP(100) SURFACE, Applied physics letters, 64(7), 1994, pp. 863-865

Authors: SOUKIASSIAN P MANGAT PS HUTTEL Y HURYCH Z GRUZZA B PORTE A
Citation: P. Soukiassian et al., SB-INDUCED SURFACE STABILIZATION OF INP(100) WAFER BEYOND 500-DEGREES-C, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1603-1608

Authors: MANGAT PS SOUKIASSIAN P HUTTEL Y HURYCH Z GRUZZA B PORTE A
Citation: Ps. Mangat et al., LOW-ENERGY AR-INDUCED MODIFICATION OF SURFACE ATOMIC BOND LENGTHS ON INP(100) WAFER( ION BOMBARDMENT), Applied physics letters, 63(14), 1993, pp. 1957-1959

Authors: HUTTEL Y BOURDIE E SOUKIASSIAN P MANGAT PS HURYCH Z
Citation: Y. Huttel et al., AL2O3+X AL INTERFACE FORMATION BY PROMOTED OXIDATION USING AN ALKALI-METAL AND REMOVAL OF THE CATALYST/, Applied physics letters, 62(19), 1993, pp. 2437-2439
Risultati: 1-11 |