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Results: 1-25 | 26-34 |
Results: 26-34/34
AMORPHOUS-SILICON DOUBLE-INJECTION DEVICE WITH GATE-CONTROLLABLE N-TYPE NEGATIVE-RESISTANCE
Authors: CHEN KH FANG YK LIU CR HWANG JD LIN YK KUO LC
Citation: Kh. Chen et al., AMORPHOUS-SILICON DOUBLE-INJECTION DEVICE WITH GATE-CONTROLLABLE N-TYPE NEGATIVE-RESISTANCE, JPN J A P 1, 33(9A), 1994, pp. 4869-4873
A NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH A CONTROLLABLE GATE
Authors: LIU CR FANG YK CHEN KH HWANG JD
Citation: Cr. Liu et al., A NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH A CONTROLLABLE GATE, JPN J A P 2, 33(4A), 1994, pp. 120000497-120000499
FAR-INFRARED INVESTIGATION OF THE GENERALIZED LYDDANE-SACHS-TELLER RELATION USING LITHIUM BORATE GLASSES
Authors: KIM YJ LEE SH HWANG JD NOH TW YUN SI
Citation: Yj. Kim et al., FAR-INFRARED INVESTIGATION OF THE GENERALIZED LYDDANE-SACHS-TELLER RELATION USING LITHIUM BORATE GLASSES, Journal of the Korean Physical Society, 27(4), 1994, pp. 430-435
OBSERVATION OF VERY HIGH PEAK-TO-VALLEY CURRENT RATIO (GREATER-THAN-OR-EQUAL-TO-9.4) IN AMORPHOUS-SILICON SILICON-CARBIDE DOUBLE-BARRIER STRUCTURE WITH BARRIER ENHANCEMENT LAYER
Authors: FANG YK CHEN KH LIU CR HWANG JD WU KS LIOU WR
Citation: Yk. Fang et al., OBSERVATION OF VERY HIGH PEAK-TO-VALLEY CURRENT RATIO (GREATER-THAN-OR-EQUAL-TO-9.4) IN AMORPHOUS-SILICON SILICON-CARBIDE DOUBLE-BARRIER STRUCTURE WITH BARRIER ENHANCEMENT LAYER, IEEE journal of quantum electronics, 30(10), 1994, pp. 2293-2296
DETERMINATION OF HEXAVALENT CHROMIUM IN ENVIRONMENTAL FLY-ASH SAMPLESBY AN INDUCTIVELY-COUPLED PLASMA-ATOMIC EMISSION SPECTROMETER WITH AMMONIUM ION COMPLEXATION
Authors: HWANG JD WANG WJ
Citation: Jd. Hwang et Wj. Wang, DETERMINATION OF HEXAVALENT CHROMIUM IN ENVIRONMENTAL FLY-ASH SAMPLESBY AN INDUCTIVELY-COUPLED PLASMA-ATOMIC EMISSION SPECTROMETER WITH AMMONIUM ION COMPLEXATION, Applied spectroscopy, 48(9), 1994, pp. 1111-1117
HIGH-CURRENT DENSITY IN AMORPHOUS-SILICON SILICONCARBIDE DOUBLE-BARRIER RESONANT-TUNNELING DEVICE ON ALUMINUM-SILICON SUBSTRATE
Authors: CHEN KH FANG YK LIU CR HWANG JD WU KS
Citation: Kh. Chen et al., HIGH-CURRENT DENSITY IN AMORPHOUS-SILICON SILICONCARBIDE DOUBLE-BARRIER RESONANT-TUNNELING DEVICE ON ALUMINUM-SILICON SUBSTRATE, JPN J A P 2, 32(6A), 1993, pp. 761-763
A NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH DOUBLE SWITCHING CHARACTERISTICS FOR MULTIPLE-VALUED LOGIC APPLICATIONS
Authors: LIU CR FANG YK HWANG JD CHEN KH
Citation: Cr. Liu et al., A NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH DOUBLE SWITCHING CHARACTERISTICS FOR MULTIPLE-VALUED LOGIC APPLICATIONS, IEEE electron device letters, 14(8), 1993, pp. 391-393
A SILICON DOUBLE SWITCHING INVERSION-CONTROLLED SWITCH FOR MULTIPLE-VALUED LOGIC APPLICATIONS
Authors: FANG YK LIU CR CHEN KH HWANG JD
Citation: Yk. Fang et al., A SILICON DOUBLE SWITCHING INVERSION-CONTROLLED SWITCH FOR MULTIPLE-VALUED LOGIC APPLICATIONS, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 918-922
NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH BIDIRECTIONALS-SHAPED NEGATIVE DIFFERENTIAL CHARACTERISTICS
Authors: LIU CR FANG YK CHEN KH HWANG JD KUO LC
Citation: Cr. Liu et al., NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH BIDIRECTIONALS-SHAPED NEGATIVE DIFFERENTIAL CHARACTERISTICS, Applied physics letters, 63(2), 1993, pp. 177-179
Risultati: 1-25 | 26-34 |