Authors: Hahnert, I Knauer, A Schneider, R Rechenberg, I Klein, A Neumann, W

Citation: I. Hahnert et al., {110} and {111} ordering in MOVPE-grown (Ga,In)P on (001) GaAs substrates at low temperature, CRYST RES T, 35(6-7), 2000, pp. 831-837

Authors: Schneider, R Kirmse, H Hahnert, I Neumann, W

Citation: R. Schneider et al., High-resolution analytical transmission electron microscopy of semiconductor quantum structures, FRESEN J AN, 365(1-3), 1999, pp. 217-220

Authors: Walther, C Herrmann, B Hahnert, I Neumann, W Masselink, WT

Citation: C. Walther et al., Electrical transport in superlattices containing InAs quantum dots in GaAsand InP, SUPERLATT M, 25(1-2), 1999, pp. 53-56

Authors: Lacayo, G Hahnert, I Klimm, D Reiche, P Neumann, W

Citation: G. Lacayo et al., Transmission electron microscope study of secondary phases in Cr3+: LiCaAlF6 single crystals, CRYST RES T, 34(9), 1999, pp. 1221-1227

Authors: Kappelt, M Turck, V Bimberg, D Kirmse, H Hahnert, I Neumann, W

Citation: M. Kappelt et al., InGaAs and InAsP V-groove quantum wires using arsenic/phosphorus exchange preparation, J CRYST GR, 195(1-4), 1998, pp. 552-557