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Results:
1-23
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Results: 23
Authors:
Domeika, M
Butylkina, R
Hallen, A
Spukaite, T
Juceviciute, V
Morkunaite, D
Jakutiene, R
Paliuniene, V
Barakauskiene, J
Goberis, M
Citation: M. Domeika et al., Prevalence of Chlamydia trachomatis infections in women attending six women's healthcare units in Kaunas, Lithuania, SEX TRANS I, 77(6), 2001, pp. 459-460
Authors:
Blank, TV
Gol'dberg, YA
Kalinina, EV
Konstantinov, OV
Konstantinov, AO
Hallen, A
Citation: Tv. Blank et al., Temperature dependence of the quantum efficiency of 4H-SiC-Based Schottky photodiodes, TECH PHYS L, 27(9), 2001, pp. 776-778
Authors:
Kalinina, E
Kossov, V
Shchukarev, A
Bratus, V
Pensl, G
Rendakova, S
Dmitriev, V
Hallen, A
Citation: E. Kalinina et al., Material quality improvements for high voltage 4H-SiC diodes, MAT SCI E B, 80(1-3), 2001, pp. 337-341
Authors:
Leveque, P
Pellegrino, P
Hallen, A
Svensson, BG
Privitera, V
Citation: P. Leveque et al., Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon, NUCL INST B, 174(3), 2001, pp. 297-303
Authors:
Janson, MS
Hallen, A
Linnarsson, MK
Svensson, BG
Citation: Ms. Janson et al., Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide - art. no. 195202, PHYS REV B, 6419(19), 2001, pp. 5202
Authors:
Pellegrino, P
Leveque, P
Lalita, J
Hallen, A
Jagadish, C
Svensson, BG
Citation: P. Pellegrino et al., Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon - art. no. 195211, PHYS REV B, 6419(19), 2001, pp. 5211
Authors:
Kalinina, E
Kholujanov, G
Zubrilov, A
Solov'ev, V
Davydov, D
Tregubova, A
Sheglov, M
Kovarskii, A
Yagovkina, M
Violina, G
Pensl, G
Hallen, A
Konstantinov, A
Karlsson, S
Rendakova, S
Dmitriev, V
Citation: E. Kalinina et al., Structural, electrical, and optical properties of low-doped 4H-SiC chemical vapor deposited epitaxial layers, J APPL PHYS, 90(10), 2001, pp. 5402-5409
Authors:
Aberg, D
Hallen, A
Pellegrino, P
Svensson, BG
Citation: D. Aberg et al., Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers, APPL PHYS L, 78(19), 2001, pp. 2908-2910
Authors:
Storasta, L
Carlsson, FHC
Sridhara, SG
Bergman, JP
Henry, A
Egilsson, T
Hallen, A
Janzen, E
Citation: L. Storasta et al., Pseudodonor nature of the D-I defect in 4H-SiC, APPL PHYS L, 78(1), 2001, pp. 46-48
Authors:
Hjelm, E
Hallen, A
Domeika, M
Citation: E. Hjelm et al., Cervical, urine and vaginal specimens for detection of Chlamydia trachomatis by ligase chain reaction in women: A comparison, ACT DER-VEN, 81(4), 2001, pp. 285-288
Authors:
Kuznetsov, AY
Leveque, P
Hallen, A
Svensson, BG
Larsen, AN
Citation: Ay. Kuznetsov et al., Self-interstitial migration during ion irradiation of boron delta-doped silicon, MAT SC S PR, 3(4), 2000, pp. 279-283
Authors:
Domeika, M
Hallen, A
Drulyte, O
Citation: M. Domeika et al., Genital Chlamydia trachomatis infections in Lithuanian women invited for screening via newspaper advertisement: a pilot study, SEX TRANS I, 76(3), 2000, pp. 216-216
Authors:
Janson, MS
Hallen, A
Linnarsson, MK
Svensson, BG
Nordell, N
Karlsson, S
Citation: Ms. Janson et al., Electric-field-assisted migration and accumulation of hydrogen in silicon carbide, PHYS REV B, 61(11), 2000, pp. 7195-7198
Authors:
Kalinina, E
Kholujanov, G
Solov'ev, V
Strel'chuk, A
Zubrilov, A
Kossov, V
Yafaev, R
Kovarski, AP
Hallen, A
Konstantinov, A
Karlsson, S
Adas, C
Rendakova, S
Dmitriev, V
Citation: E. Kalinina et al., High-dose Al-implanted 4H-SiC p(+)-n-n(+) junctions, APPL PHYS L, 77(19), 2000, pp. 3051-3053
Authors:
Janson, MS
Linnarsson, MK
Hallen, A
Svensson, BG
Nordell, N
Bleichner, H
Citation: Ms. Janson et al., Transient enhanced diffusion of implanted boron in 4H-silicon carbide, APPL PHYS L, 76(11), 2000, pp. 1434-1436
Authors:
Hallen, A
Henry, A
Pellegrino, E
Svensson, BG
Aberg, D
Citation: A. Hallen et al., Ion implantation induced defects in epitaxial 4H-SiC, MAT SCI E B, 61-2, 1999, pp. 378-381
Authors:
Aberg, D
Hallen, A
Svensson, BG
Citation: D. Aberg et al., Low-dose ion implanted epitaxial 4H-SiC investigated by deep level transient spectroscopy, PHYSICA B, 274, 1999, pp. 672-676
Authors:
Kuznetsov, AY
Janson, M
Hallen, A
Svensson, BG
Larsen, AN
Citation: Ay. Kuznetsov et al., Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500-850degrees C, NUCL INST B, 148(1-4), 1999, pp. 279-283
Authors:
Pellegrino, P
Keskitalo, N
Hallen, A
Svensson, BG
Citation: P. Pellegrino et al., Reverse annealing effects in heavy ion implanted silicon, NUCL INST B, 148(1-4), 1999, pp. 306-310
Authors:
Keskitalo, N
Hallen, A
Pellegrino, P
Svensson, BG
Citation: N. Keskitalo et al., Anomalous field dependence of deep level emission in proton irradiated silicon, NUCL INST B, 147(1-4), 1999, pp. 427-431
Authors:
Hallen, A
Keskitalo, N
Josyula, L
Svensson, BG
Citation: A. Hallen et al., Migration energy for the silicon self-interstitial, J APPL PHYS, 86(1), 1999, pp. 214-216
Authors:
Fatima, S
Jagadish, C
Lalita, J
Svensson, BG
Hallen, A
Citation: S. Fatima et al., Hydrogen interaction with implantation induced point defects in p-type silicon, J APPL PHYS, 85(5), 1999, pp. 2562-2567
Authors:
Morvan, E
Godignon, P
Vellvehi, M
Hallen, A
Linnarsson, M
Kuznetsov, AY
Citation: E. Morvan et al., Channeling implantations of Al+ into 6H silicon carbide, APPL PHYS L, 74(26), 1999, pp. 3990-3992
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