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Results: 26-33/33
Authors:
Li, L
Han, BK
Fu, Q
Hicks, RF
Citation: L. Li et al., Example of a compound semiconductor surface that mimics silicon: The InP(001)-(2x1) reconstruction, PHYS REV L, 82(9), 1999, pp. 1879-1882
Authors:
Yoon, HK
Kim, SS
Kim, IO
Na, DG
Byun, HS
Shin, HJ
Han, BK
Citation: Hk. Yoon et al., MRI of primary meningeal tumours in children, NEURORADIOL, 41(7), 1999, pp. 512-516
Authors:
Hicks, RF
Qi, H
Fu, Q
Han, BK
Li, L
Citation: Rf. Hicks et al., Hydrogen adsorption on GaAs (001) reconstructions, J CHEM PHYS, 110(21), 1999, pp. 10498-10508
Authors:
Begarney, MJ
Li, L
Han, BK
Law, DC
Li, CH
Yoon, H
Goorsky, MS
Hicks, RF
Citation: Mj. Begarney et al., Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy, J APPL PHYS, 86(1), 1999, pp. 318-324
Authors:
Gan, S
Li, L
Begarney, MJ
Law, D
Han, BK
Hicks, RF
Citation: S. Gan et al., Step structure of arsenic-terminated vicinal Ge (100), J APPL PHYS, 85(3), 1999, pp. 2004-2006
Authors:
Li, L
Han, BK
Law, D
Li, CH
Fu, Q
Hicks, RF
Citation: L. Li et al., A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy, APPL PHYS L, 75(5), 1999, pp. 683-685
Authors:
Li, L
Han, BK
Law, D
Begarney, M
Hicks, RF
Citation: L. Li et al., Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 28-33
Authors:
Li, L
Han, BK
Hicks, RF
Citation: L. Li et al., Surface phases of GaAs and InAs (001) found in the metalorganic vapor-phase epitaxy environment, APPL PHYS L, 73(9), 1998, pp. 1239-1241