Authors: Harafuji, K

Citation: K. Harafuji, Transport of gas-phase species stored in stagnant volumes under a GaN metalorganic vapor phase epitaxy horizontal reactor, JPN J A P 1, 40(11), 2001, pp. 6263-6283

Authors: Harafuji, K Hasegawa, Y Ishibashi, A Tsujimura, A Kidoguchi, I Ban, Y Ohnaka, K

Citation: K. Harafuji et al., Complex flow and gas-phase reactions in a horizontal reactor for GaN metalorganic vapor phase epitaxy, JPN J A P 1, 39(11), 2000, pp. 6180-6190

Authors: Tsujimura, A Ishibashi, A Hasegawa, Y Kamiyama, S Kidoguchi, I Otsuka, N Miyanaga, R Sugahara, G Suzuki, M Kume, M Harafuji, K Ban, Y

Citation: A. Tsujimura et al., Room-temperature CW operation of GaInN multiple quantum well laser diodes with optimized indium content, PHYS ST S-A, 176(1), 1999, pp. 53-57

Authors: Harafuji, K Ohkuni, M Kubota, M Nakagawa, H Misaka, A

Citation: K. Harafuji et al., Simulation approach for achieving layout independent polysilicon gate etching, IEEE DEVICE, 46(6), 1999, pp. 1105-1112

Authors: Tsujimura, A Hasegawa, Y Ishibashi, A Kamiyama, S Kidoguchi, I Miyanaga, R Suzuki, M Kume, M Harafuji, K Ban, Y

Citation: A. Tsujimura et al., Room-temperature continuous-wave operation of GaInN multiquantum well laser diodes with low indium content, ELECTR LETT, 35(12), 1999, pp. 998-999