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Results: 1-16 |
Results: 16
Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission
Authors: Harmand, JC Ungaro, G Ramos, J Rao, EVK Saint-Girons, G Teissier, R Le Roux, G Largeau, L Patriarche, G
Citation: Jc. Harmand et al., Investigations on GaAsSbN/GaAs quantum wells for 1.3-1.55 mu m emission, J CRYST GR, 227, 2001, pp. 553-557
Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs
Authors: Teissier, R Sicault, D Harmand, JC Ungaro, G Le Roux, G Largeau, L
Citation: R. Teissier et al., Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs, J APPL PHYS, 89(10), 2001, pp. 5473-5477
Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers
Authors: Mangeney, J Choumane, H Patriarche, G Leroux, G Aubin, G Harmand, JC Oudar, JL Bernas, H
Citation: J. Mangeney et al., Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers, APPL PHYS L, 79(17), 2001, pp. 2722-2724
Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP
Authors: Dias, IFL Duarte, JL Laureto, E Gelamo, RV Menezes, EA Harmand, JC
Citation: Ifl. Dias et al., Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs-distributed Bragg mirrors on InP, SUPERLATT M, 28(1), 2000, pp. 29-33
GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth
Authors: Patriarche, G Meriadec, C LeRoux, G Deparis, C Sagnes, I Harmand, JC Glas, F
Citation: G. Patriarche et al., GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth, APPL SURF S, 164, 2000, pp. 15-21
All-optical discrimination at 1.5 mu m using ultrafast saturable absorber vertical cavity device
Authors: Mangeney, J Aubin, G Oudar, JL Harmand, JC Patriarche, G Choumane, H Stelmakh, N Lourtioz, JM
Citation: J. Mangeney et al., All-optical discrimination at 1.5 mu m using ultrafast saturable absorber vertical cavity device, ELECTR LETT, 36(17), 2000, pp. 1486-1488
Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
Authors: Harmand, JC Ungaro, G Largeau, L Le Roux, G
Citation: Jc. Harmand et al., Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN, APPL PHYS L, 77(16), 2000, pp. 2482-2484
Ultrafast saturable absorption at 1.55 mu m in heavy-ion-irradiated quantum-well vertical cavity
Authors: Mangeney, J Oudar, JL Harmand, JC Meriadec, C Patriarche, G Aubin, G Stelmakh, N Lourtioz, JM
Citation: J. Mangeney et al., Ultrafast saturable absorption at 1.55 mu m in heavy-ion-irradiated quantum-well vertical cavity, APPL PHYS L, 76(11), 2000, pp. 1371-1373
The quantum confined Pockels effect in InGaAs-based multi-quantum wells
Authors: Krebs, O Voisin, P Rondi, D Gentner, JL Goldstein, L Harmand, JC
Citation: O. Krebs et al., The quantum confined Pockels effect in InGaAs-based multi-quantum wells, J PHYS IV, 9(P2), 1999, pp. 37-46
Recent results on superlattice transport and optoelectronics applications
Authors: Palmier, JF Minot, C Harmand, JC Sibille, A Tanguy, D Penard, E
Citation: Jf. Palmier et al., Recent results on superlattice transport and optoelectronics applications, SUPERLATT M, 25(1-2), 1999, pp. 13-19
Shubnikov-de Haas - Like oscillations in the vertical transport of semiconductor superlattices
Authors: Aristone, F Portal, JC Palmier, JF Harmand, JC
Citation: F. Aristone et al., Shubnikov-de Haas - Like oscillations in the vertical transport of semiconductor superlattices, BRAZ J PHYS, 29(2), 1999, pp. 375-379
Room temperature continuous wave operation under optical pumping of a 1.48mu m vertical cavity laser based on AlGaAsSb mirror
Authors: Harmand, JC Ungaro, G Sagnes, I Debray, JP Sermage, B Rivera, T Meriadec, C Oudar, JL Raj, R Olivier-martin, F Kazmierski, C Madani, R
Citation: Jc. Harmand et al., Room temperature continuous wave operation under optical pumping of a 1.48mu m vertical cavity laser based on AlGaAsSb mirror, J CRYST GR, 202, 1999, pp. 837-840
Investigation of optical properties of interfaces between heavily doped Al-0.48 In0.52As : Si and InP (Fe) substrates by photoreflectance analysis
Authors: Laureto, E Dias, IFL Duarte, JL Di Mauro, E Iwamoto, H Freitas, MTP Lourenco, SA Toginho, DO Harmand, JC
Citation: E. Laureto et al., Investigation of optical properties of interfaces between heavily doped Al-0.48 In0.52As : Si and InP (Fe) substrates by photoreflectance analysis, J APPL PHYS, 85(8), 1999, pp. 4184-4188
GaAsSbN: a new low-bandgap material for GaAs substrates
Authors: Ungaro, G Le Roux, G Teissier, R Harmand, JC
Citation: G. Ungaro et al., GaAsSbN: a new low-bandgap material for GaAs substrates, ELECTR LETT, 35(15), 1999, pp. 1246-1248
Quasi-CW room temperature operation of 1.52 mu m InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion
Authors: Syrbu, AV Iakovlev, VP Berseth, CA Dehaese, O Rudra, A Kapon, E Stark, C Boucart, J Gaborit, F Jacquet, J Sagnes, I Harmand, JC Raj, R
Citation: Av. Syrbu et al., Quasi-CW room temperature operation of 1.52 mu m InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion, JPN J A P 1, 37(11), 1998, pp. 6016-6017
Generation of the second harmonic in a doubly resonant AlAs/GaAlAs vertical microcavity
Authors: Simonneau, C Harmand, JC Vidakovic, P Levenson, JA
Citation: C. Simonneau et al., Generation of the second harmonic in a doubly resonant AlAs/GaAlAs vertical microcavity, ANN PHYSIQ, 23, 1998, pp. 221-222
Risultati: 1-16 |