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Results: 1-16 |
Results: 16
X-ray emission studies of the valence band of nanodiamonds annealed at different temperatures
Authors: Okotrub, AV Bulusheva, LG Kuznetsov, VL Butenko, YV Chuvilin, AL Heggie, MI
Citation: Av. Okotrub et al., X-ray emission studies of the valence band of nanodiamonds annealed at different temperatures, J PHYS CH A, 105(42), 2001, pp. 9781-9787
Graphitization at diamond dislocation cores
Authors: Ewels, CP Wilson, NT Heggie, MI Jones, R Briddon, PR
Citation: Cp. Ewels et al., Graphitization at diamond dislocation cores, J PHYS-COND, 13(40), 2001, pp. 8965-8972
p-type surface doping of diamond: a first-principles study
Authors: Goss, JP Hourahine, B Jones, R Heggie, MI Briddon, PR
Citation: Jp. Goss et al., p-type surface doping of diamond: a first-principles study, J PHYS-COND, 13(40), 2001, pp. 8973-8978
First principles studies of H in diamond
Authors: Goss, JP Jones, R Heggie, MI Ewels, CP Briddon, PR Oberg, S
Citation: Jp. Goss et al., First principles studies of H in diamond, PHYS ST S-A, 186(2), 2001, pp. 263-268
Aromaticity of [60]fullerene derivatives (C60Xn, X = H, F; n=18, 36) constrained to have planar hexagonal rings
Authors: Jenkins, S Heggie, MI Taylor, R
Citation: S. Jenkins et al., Aromaticity of [60]fullerene derivatives (C60Xn, X = H, F; n=18, 36) constrained to have planar hexagonal rings, J CHEM S P2, (12), 2000, pp. 2415-2419
Structural and electronic properties of line defects in GaN
Authors: Elsner, J Blumenau, AT Frauenheim, T Jones, R Heggie, MI
Citation: J. Elsner et al., Structural and electronic properties of line defects in GaN, MRS I J N S, 5, 2000, pp. NIL_413-NIL_423
Dislocations in hexagonal and cubic GaN
Authors: Blumenau, AT Elsner, J Jones, R Heggie, MI Oberg, S Frauenheim, T Briddon, PR
Citation: At. Blumenau et al., Dislocations in hexagonal and cubic GaN, J PHYS-COND, 12(49), 2000, pp. 10223-10233
Theory of dislocations in diamond and silicon and their interaction with hydrogen
Authors: Heggie, MI Jenkins, S Ewels, CP Jemmer, P Jones, R Briddon, PR
Citation: Mi. Heggie et al., Theory of dislocations in diamond and silicon and their interaction with hydrogen, J PHYS-COND, 12(49), 2000, pp. 10263-10270
Quantitative analysis of bonding in 90 degrees partial dislocation in diamond
Authors: Jenkins, S Heggie, MI
Citation: S. Jenkins et Mi. Heggie, Quantitative analysis of bonding in 90 degrees partial dislocation in diamond, J PHYS-COND, 12(49), 2000, pp. 10325-10333
Modelling carbon for industry: Radiolytic oxidation
Authors: Leary, P Ewels, CP Heggie, MI Jones, R Briddon, PR
Citation: P. Leary et al., Modelling carbon for industry: Radiolytic oxidation, PHYS ST S-B, 217(1), 2000, pp. 429-447
Hydrogen interaction with dislocations in Si
Authors: Ewels, CP Leoni, S Heggie, MI Jemmer, P Hernandez, E Jones, R Briddon, PR
Citation: Cp. Ewels et al., Hydrogen interaction with dislocations in Si, PHYS REV L, 84(4), 2000, pp. 690-693
The formation of nanopipes caused by donor impurities in GaN: a theoretical study for the case of oxygen
Authors: Gutierrez, R Haugk, M Frauenheim, T Elsner, J Jones, R Heggie, MI Oberg, S Briddon, PR
Citation: R. Gutierrez et al., The formation of nanopipes caused by donor impurities in GaN: a theoretical study for the case of oxygen, PHIL MAG L, 79(3), 1999, pp. 147-152
Interaction of oxygen with threading dislocations in GaN
Authors: Jones, R Elsner, J Haugk, M Gutierrez, R Frauenheim, T Heggie, MI Oberg, S Briddon, PR
Citation: R. Jones et al., Interaction of oxygen with threading dislocations in GaN, PHYS ST S-A, 171(1), 1999, pp. 167-173
Domain boundaries on {11(2)over-bar-0} planes in GaN: A theoretical study
Authors: Elsner, J Kaukonen, M Heggie, MI Haugk, M Frauenheim, T Jones, R
Citation: J. Elsner et al., Domain boundaries on {11(2)over-bar-0} planes in GaN: A theoretical study, PHYS REV B, 58(23), 1998, pp. 15347-15350
Deep acceptors trapped at threading-edge dislocations in GaN
Authors: Elsner, J Jones, R Heggie, MI Sitch, PK Haugk, M Frauenheim, T Oberg, S Briddon, PR
Citation: J. Elsner et al., Deep acceptors trapped at threading-edge dislocations in GaN, PHYS REV B, 58(19), 1998, pp. 12571-12574
Effect of oxygen on the growth of (10(1)over-bar0) GaN surfaces: The formation of nanopipes
Authors: Elsner, J Jones, R Haugk, M Gutierrez, R Frauenheim, T Heggie, MI Oberg, S Briddon, PR
Citation: J. Elsner et al., Effect of oxygen on the growth of (10(1)over-bar0) GaN surfaces: The formation of nanopipes, APPL PHYS L, 73(24), 1998, pp. 3530-3532
Risultati: 1-16 |