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Results:
1-7
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Results: 7
Authors:
Heo, D
Sutono, A
Chen, E
Suh, Y
Laskar, J
Citation: D. Heo et al., A 1.9-GHz DECT CMOS power amplifier with fully integrated multilayer LTCC passives, IEEE MICR W, 11(6), 2001, pp. 249-251
Authors:
Chen, E
Heo, D
Laskar, J
Bien, D
Citation: E. Chen et al., 0.24-mu m CMOS technology and BSIM RF modeling for Bluetooth power applications, MICROWAVE J, 44(2), 2001, pp. 142
Authors:
Sutono, A
Heo, D
Chen, YJE
Laskar, J
Citation: A. Sutono et al., High-Q LTCC-based passive library for wireless system-on-package (SOP) module development, IEEE MICR T, 49(10), 2001, pp. 1715-1724
Authors:
Farahmand, M
Brennan, KF
Gebara, E
Heo, D
Suh, Y
Laskar, J
Citation: M. Farahmand et al., Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs, IEEE DEVICE, 48(9), 2001, pp. 1844-1849
Authors:
Lin, CH
Hwu, RJ
Sadwick, LP
Heo, D
Citation: Ch. Lin et al., Molecular beam epitaxy growth of TmP/GaAs and transistor action in GaP/TmP/GaAs heterostructures, IEEE DEVICE, 48(10), 2001, pp. 2205-2209
Authors:
Yoo, S
Murti, MR
Heo, D
Laskar, J
Citation: S. Yoo et al., A C-band low power high dynamic range GaAs MESFET low noise amplifier, MICROWAVE J, 43(2), 2000, pp. 90
Authors:
Heo, D
Gebara, E
Chen, UJE
Yoo, SY
Hamai, M
Suh, Y
Laskar, J
Citation: D. Heo et al., An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling, IEEE MICR T, 48(12), 2000, pp. 2361-2369
Risultati:
1-7
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