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Results: 1-15 |
Results: 15
Defect analysis of n-type silicon strained layers
Authors: Simoen, E Loo, R Roussel, P Caymax, M Bender, H Claeys, C Herzog, HJ Blondeel, A Clauws, P
Citation: E. Simoen et al., Defect analysis of n-type silicon strained layers, MAT SC S PR, 4(1-3), 2001, pp. 225-227
Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures afterhydrogen or helium ion implantation for virtual substrate fabrication
Authors: Hollander, B Lenk, S Mantl, S Trinkaus, H Kirch, D Luysberg, M Hackbarth, T Herzog, HJ Fichtner, PFP
Citation: B. Hollander et al., Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures afterhydrogen or helium ion implantation for virtual substrate fabrication, NUCL INST B, 175, 2001, pp. 357-367
SiGe-based FETs: buffer issues and device results
Authors: Herzog, HJ Hackbarth, T Hock, G Zeuner, M Konig, U
Citation: Hj. Herzog et al., SiGe-based FETs: buffer issues and device results, THIN SOL FI, 380(1-2), 2000, pp. 36-41
SiGe/Si hetero-field-effect-transistor with PN-junction gate
Authors: Seiler, U Hachbarth, T Herzog, HJ
Citation: U. Seiler et al., SiGe/Si hetero-field-effect-transistor with PN-junction gate, THIN SOL FI, 380(1-2), 2000, pp. 204-206
Alternatives to thick MBE-grown relaxed SiGe buffers
Authors: Hackbarth, T Herzog, HJ Zeuner, M Hock, G Fitzgerald, BA Bulsara, M Rosenblad, C von Kanel, H
Citation: T. Hackbarth et al., Alternatives to thick MBE-grown relaxed SiGe buffers, THIN SOL FI, 369(1-2), 2000, pp. 148-151
Relaxed SiGe buffers with thicknesses below 0.1 mu m
Authors: Bauer, M Lyutovich, K Oehme, M Kasper, E Herzog, HJ Ernst, F
Citation: M. Bauer et al., Relaxed SiGe buffers with thicknesses below 0.1 mu m, THIN SOL FI, 369(1-2), 2000, pp. 152-156
Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates forSiGe n-channel HMOSFETs
Authors: Wohl, G Dudek, V Graf, M Kibbel, H Herzog, HJ Klose, M
Citation: G. Wohl et al., Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates forSiGe n-channel HMOSFETs, THIN SOL FI, 369(1-2), 2000, pp. 175-181
0.1 mu m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz f(max)
Authors: Hock, G Hackbarth, T Kab, N Herzog, HJ Enciso, M Aniel, F Crozat, P Adde, R Kohn, E Konig, U
Citation: G. Hock et al., 0.1 mu m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz f(max), ELECTR LETT, 36(16), 2000, pp. 1428-1429
High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition
Authors: Hock, G Kohn, E Rosenblad, C von Kanel, H Herzog, HJ Konig, U
Citation: G. Hock et al., High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition, APPL PHYS L, 76(26), 2000, pp. 3920-3922
Strain relaxation mechanism for hydrogen-implanted Si1-xGex/Si(100) heterostructures
Authors: Trinkaus, H Hollander, B Rongen, S Mantl, S Herzog, HJ Kuchenbecker, J Hackbarth, T
Citation: H. Trinkaus et al., Strain relaxation mechanism for hydrogen-implanted Si1-xGex/Si(100) heterostructures, APPL PHYS L, 76(24), 2000, pp. 3552-3554
Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation
Authors: Hollander, B Mantl, S Liedtke, R Mesters, S Herzog, HJ Kibbel, H Hackbarth, T
Citation: B. Hollander et al., Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation, NUCL INST B, 148(1-4), 1999, pp. 200-210
Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogenimplantation
Authors: Mantl, S Hollander, B Liedtke, R Mesters, S Herzog, HJ Kibbel, H Hackbarth, T
Citation: S. Mantl et al., Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogenimplantation, NUCL INST B, 147(1-4), 1999, pp. 29-34
Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors
Authors: Hackbarth, T Hoeck, G Herzog, HJ Zeuner, M
Citation: T. Hackbarth et al., Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors, J CRYST GR, 202, 1999, pp. 734-738
Assessment of transport parameters for the design of high speed Si/SiGe HBTs with compositionally graded base
Authors: Weller, J Jorke, H Strohm, K Luy, JF Kibbel, H Herzog, HJ Sauer, R
Citation: J. Weller et al., Assessment of transport parameters for the design of high speed Si/SiGe HBTs with compositionally graded base, THIN SOL FI, 336(1-2), 1998, pp. 137-140
Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications
Authors: Hock, G Gluck, M Hackbarth, T Herzog, HJ Kohn, E
Citation: G. Hock et al., Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications, THIN SOL FI, 336(1-2), 1998, pp. 141-144
Risultati: 1-15 |