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Results: 1-25 | 26-50 | 51-62
Results: 1-25/62

Authors: Hess, K Haggag, A McMahon, W Cheng, K Lee, J Lyding, J
Citation: K. Hess et al., The physics of determining chip reliability, IEEE CIRC D, 17(3), 2001, pp. 33-38

Authors: Kunschner, LJ Kuttesch, J Hess, K Yung, WKA
Citation: Lj. Kunschner et al., Survival and recurrence factors in adult medulloblastoma: The M.D. Anderson Cancer Center experience from 1978 to 1998, NEURO-ONCOL, 3(3), 2001, pp. 167-173

Authors: Cheng, KG Lee, JJ Chen, Z Shah, SA Hess, K Leburton, JP Lyding, JW
Citation: Kg. Cheng et al., Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices, J VAC SCI B, 19(4), 2001, pp. 1119-1123

Authors: Cheng, KG Hess, K Lyding, JW
Citation: Kg. Cheng et al., Deuterium passivation of interface traps in MOS devices, IEEE ELEC D, 22(9), 2001, pp. 441-443

Authors: Cheng, K Hess, K Lyding, JW
Citation: K. Cheng et al., A new technique to quantify deuterium passivation of interface traps in MOS devices, IEEE ELEC D, 22(5), 2001, pp. 203-205

Authors: Jung, HH Hergersberg, M Kneifel, S Alkadhi, H Schiess, R Weigell-Weber, M Daniels, G Kollias, S Hess, K
Citation: Hh. Jung et al., McLeod syndrome: A novel mutation, predominant psychiatric manifestations,and distinct striatal imaging findings, ANN NEUROL, 49(3), 2001, pp. 384-392

Authors: Cheng, KG Lee, J Chen, Z Shah, S Hess, K Lyding, JW Kim, YK Kim, YW Suh, KP
Citation: Kg. Cheng et al., Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices, MICROEL ENG, 56(3-4), 2001, pp. 353-358

Authors: Blattler, T Siegel, AM Jochum, W Aguzzi, A Hess, K
Citation: T. Blattler et al., Primary cerebral amyloidoma, NEUROLOGY, 56(6), 2001, pp. 777-777

Authors: Buttner, U Chofflon, M Hess, K Kappos, L Kesselring, J Ludin, HP Schluep, M Vaney, C Baumhackl, U Berger, T Deisenhammer, F Freimuller, M Hartung, HP Kollegger, H Kristoferitsch, W Lassmann, H Markut, H Vass, K Altenkirch, H Boese, J Gass, A Gehlen, W Goebels, N Haas, J Haferkamp, G Heidenreich, F Heitmann, R Hemmer, B Hohlfeld, R Janzen, RWC Jugelt, E Kolmel, W Konig, N Kowitzsch, K Manegold, U Melms, A Mertin, J Petereit, HF Pette, M Pohlau, D Poser, S Sailer, M Schmidt, S Schock, G Schulz, M Seidel, D Stangel, M Stark, E Stoll, G Weinrich, W Wietholter, H Zettl, UK Zipp, F Zschenderlein, R Bayas, A Chan, A Flachenecker, P Gold, R Grauer, O Jung, S Kallmann, B Leussink, V Maurer, M Rieckmann, P Toyka, KV Weilbach, FX
Citation: U. Buttner et al., Escalating immunomodulatory therapy of multiple sclerosis - 1. Supplement, NERVENARZT, 72(2), 2001, pp. 150-157

Authors: Hess, K Philipp, W
Citation: K. Hess et W. Philipp, A possible loophole in the theorem of Bell, P NAS US, 98(25), 2001, pp. 14224-14227

Authors: Hess, K Philipp, W
Citation: K. Hess et W. Philipp, Bell's theorem and the problem of decidability between the views of Einstein and Bohr, P NAS US, 98(25), 2001, pp. 14228-14233

Authors: Dupont, N Hess, K
Citation: N. Dupont et K. Hess, Hochschild cohomology is topological, J PURE APPL, 165(1), 2001, pp. 1-6

Authors: Lacroix, M Abi-Said, D Fourney, DR Gokaslan, ZL Shi, WM DeMonte, F Lang, FF McCutcheon, IE Hassenbusch, SJ Holland, E Hess, K Michael, C Miller, D Sawaya, R
Citation: M. Lacroix et al., A multivariate analysis of 416 patients with glioblastoma multiforme: prognosis, extent of resection, and survival, J NEUROSURG, 95(2), 2001, pp. 190-198

Authors: Cheng, KG Hess, K Lyding, JW
Citation: Kg. Cheng et al., Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces, J APPL PHYS, 90(12), 2001, pp. 6536-6538

Authors: Stadele, M Tuttle, BR Hess, K
Citation: M. Stadele et al., Tunneling through ultrathin SiO2 gate oxides from microscopic models, J APPL PHYS, 89(1), 2001, pp. 348-363

Authors: Chen, Z Chen, KG Lee, JJ Lyding, JW Hess, K Chetlur, S
Citation: Z. Chen et al., Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study, IEEE DEVICE, 48(4), 2001, pp. 813-815

Authors: Quay, R Hess, K Reuter, R Schlechtweg, M Grave, T Palankovski, V Selberherr, S
Citation: R. Quay et al., Nonlinear electronic transport and device performance of HEMTs, IEEE DEVICE, 48(2), 2001, pp. 210-217

Authors: Blum, MW Siegel, AM Meier, R Hess, K
Citation: Mw. Blum et al., Neuroleptic malignant-like syndrome and acute hepatitis during tolcapone and clozapine medication, EUR NEUROL, 46(3), 2001, pp. 158-160

Authors: Kozuch, P Hoff, PM Hess, K Adams, J Newman, RA Lee, F Pazdur, R
Citation: P. Kozuch et al., Phase I bioequivalency study of MitoExtra and mitomycin C in patients withsolid tumors, CANCER, 91(4), 2001, pp. 815-821

Authors: Cheng, K Leburton, JP Hess, K Lyding, JW
Citation: K. Cheng et al., On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors, APPL PHYS L, 79(6), 2001, pp. 863-865

Authors: Cheng, KG Lee, JJ Hess, K Lyding, JW
Citation: Kg. Cheng et al., Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect, APPL PHYS L, 78(13), 2001, pp. 1882-1884

Authors: Benderdour, M Van Bui, T Hess, K Dicko, A Belleville, F Dousset, B
Citation: M. Benderdour et al., Effects of boron derivatives on extracellular matrix formation, J TR ELEM M, 14(3), 2000, pp. 168-173

Authors: Alif, N Hess, K Straczek, J Sebbar, S Belahsen, Y Mouane, N Abkari, A Nabet, P Gelot, MA
Citation: N. Alif et al., Mucopolysaccharidosis type I in Morocco: clinicals features and genetic profile, ARCH PED, 7(6), 2000, pp. 597-604

Authors: Stadele, M Fischer, B Tuttle, BR Hess, K
Citation: M. Stadele et al., Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides: predictions from microscopic models, SUPERLATT M, 28(5-6), 2000, pp. 517-524

Authors: Stadele, M Tuttle, BR Hess, K Register, LF
Citation: M. Stadele et al., Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides, SUPERLATT M, 27(5-6), 2000, pp. 405-409
Risultati: 1-25 | 26-50 | 51-62