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Results:
1-7
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Results: 7
Authors:
Mateos, J
Gonzalez, T
Pardo, D
Hoel, V
Cappy, A
Citation: J. Mateos et al., Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs, MICROEL REL, 41(1), 2001, pp. 73-77
Authors:
Hoel, V
Guhel, Y
Boudart, B
Gaquiere, C
De Jaeger, JC
Lahreche, H
Gibart, P
Citation: V. Hoel et al., Static measurements of GaN MESFETs on (111) Si substrates, ELECTR LETT, 37(17), 2001, pp. 1095-1096
Authors:
Bollaert, S
Cordier, Y
Zaknoune, M
Happy, H
Hoel, V
Lepilliet, S
Theron, D
Cappy, A
Citation: S. Bollaert et al., The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter, SOL ST ELEC, 44(6), 2000, pp. 1021-1027
Authors:
Mateos, J
Gonzalez, T
Pardo, D
Hoel, V
Cappy, A
Citation: J. Mateos et al., Monte Carlo simulator for the design optimization of low-noise HEMTs, IEEE DEVICE, 47(10), 2000, pp. 1950-1956
Authors:
Mateos, J
Gonzalez, T
Pardo, D
Hoel, V
Happy, H
Cappy, A
Citation: J. Mateos et al., Improved Monte Carlo algorithm for the simulation of delta-doped AlInAs/GaInAs HEMT's, IEEE DEVICE, 47(1), 2000, pp. 250-253
Authors:
Bollaert, S
Cordier, Y
Hoel, V
Zaknoune, M
Happy, H
Lepilliet, S
Cappy, A
Citation: S. Bollaert et al., Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate, IEEE ELEC D, 20(3), 1999, pp. 123-125
Authors:
Mateos, J
Gonzalez, T
Pardo, D
Hoel, V
Cappy, A
Citation: J. Mateos et al., Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis, SEMIC SCI T, 14(9), 1999, pp. 864-870
Risultati:
1-7
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