AAAAAA

   
Results: 1-15 |
Results: 15
Characterization of Ge delta-doped Si(111) with RBS channelling
Authors: Yuhara, J Morita, K Falta, J Muller, BH Horn-von Hoegen, M
Citation: J. Yuhara et al., Characterization of Ge delta-doped Si(111) with RBS channelling, SURF INT AN, 31(8), 2001, pp. 754-760
Au induced reconstructions on Si(111)
Authors: Seifert, C Hild, R Horn-von Hoegen, M Zhachuk, RA Olshanetsky, BZ
Citation: C. Seifert et al., Au induced reconstructions on Si(111), SURF SCI, 488(1-2), 2001, pp. 233-238
Local Au coverage as driving force for Au induced faceting of vicinal Si(001): a LEEM and XPEEM study
Authors: Heringdorf, FJMZ Hild, R Zahl, P Schmidt, T Ressel, B Heun, S Bauer, E Horn-von Hoegen, M
Citation: Fjmz. Heringdorf et al., Local Au coverage as driving force for Au induced faceting of vicinal Si(001): a LEEM and XPEEM study, SURF SCI, 480(3), 2001, pp. 103-108
Spatial variation of Au coverage as the driving force for nanoscopic pattern formation
Authors: Heringdorf, FJMZ Schmidt, T Heun, S Hild, R Zahl, P Ressel, B Bauer, E Horn-von Hoegen, M
Citation: Fjmz. Heringdorf et al., Spatial variation of Au coverage as the driving force for nanoscopic pattern formation, PHYS REV L, 86(22), 2001, pp. 5088-5091
Thermal activation of dislocation array formation
Authors: Janzen, A Dumkow, I Horn-von Hoegen, M
Citation: A. Janzen et al., Thermal activation of dislocation array formation, APPL PHYS L, 79(15), 2001, pp. 2387-2389
Au induced regular ordered striped domain wall structure of a (5 x 3) reconstruction on Si(001) studied by STM and SPA-LEED
Authors: Hild, R Heringdorf, FJMZ Zahl, P Horn-von Hoegen, M
Citation: R. Hild et al., Au induced regular ordered striped domain wall structure of a (5 x 3) reconstruction on Si(001) studied by STM and SPA-LEED, SURF SCI, 454, 2000, pp. 851-855
Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction - Part II
Authors: Horn-von Hoegen, M
Citation: M. Horn-von Hoegen, Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction - Part II, Z KRISTALL, 214(11), 1999, pp. 684-721
Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction - Part I (vol 214, pg 591, 1999)
Authors: Horn-von Hoegen, M
Citation: M. Horn-von Hoegen, Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction - Part I (vol 214, pg 591, 1999), Z KRISTALL, 214(11), 1999, pp. 765-765
Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction - Part I
Authors: Horn-von Hoegen, M
Citation: M. Horn-von Hoegen, Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction - Part I, Z KRISTALL, 214(10), 1999, pp. 591-629
Bi surfactant mediated epitaxy of Ge on Si(111)
Authors: Horn-von Hoegen, M Heringdorf, FJMZ Kammler, M Schaeffer, C Reinking, D Hofmann, KR
Citation: M. Horn-von Hoegen et al., Bi surfactant mediated epitaxy of Ge on Si(111), THIN SOL FI, 344, 1999, pp. 579-582
Au-induced giant faceting of vicinal Si(001)
Authors: Horn-von Hoegen, M Heringdorf, FJMZ Hild, R Zahl, P Schmidt, T Bauer, E
Citation: M. Horn-von Hoegen et al., Au-induced giant faceting of vicinal Si(001), SURF SCI, 435, 1999, pp. 475-480
Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates
Authors: Reinking, D Kammler, R Hoffmann, N Horn-von Hoegen, M Hofmann, KR
Citation: D. Reinking et al., Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates, ELECTR LETT, 35(6), 1999, pp. 503-504
Surface morphology changes due to adsorbates and due to electron bombardment
Authors: Henzler, M Thielking, D Horn-von Hoegen, M Zielasek, V
Citation: M. Henzler et al., Surface morphology changes due to adsorbates and due to electron bombardment, PHYSICA A, 261(1-2), 1998, pp. 1-12
Adsorption induced giant faceting of vicinal Si(001)
Authors: Horn-von Hoegen, M Heringdorf, FJMZ Kahler, D Schmidt, T Bauer, E
Citation: M. Horn-von Hoegen et al., Adsorption induced giant faceting of vicinal Si(001), THIN SOL FI, 336(1-2), 1998, pp. 16-21
Surfactant-mediated epitaxy of Ge on Si: progress in growth and electricalcharacterization
Authors: Kammler, M Reinking, D Hofmann, KR Horn-von Hoegen, M
Citation: M. Kammler et al., Surfactant-mediated epitaxy of Ge on Si: progress in growth and electricalcharacterization, THIN SOL FI, 336(1-2), 1998, pp. 29-33
Risultati: 1-15 |