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Results:
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Results: 10
Authors:
Lu, YH
Dimitrov, D
Liu, JR
Hsieh, TE
Shieh, HPD
Citation: Yh. Lu et al., Mask films for thermally induced superresolution readout in rewritable phase-change optical disks, JPN J A P 1, 40(3B), 2001, pp. 1647-1648
Authors:
Shieh, HPD
Tsai, SY
Peng, YH
Hsieh, TE
Citation: Hpd. Shieh et al., Optical disk mastering using optical superresolution technique, JPN J A P 1, 40(3B), 2001, pp. 1671-1675
Authors:
Jeng, JH
Hsieh, TE
Citation: Jh. Jeng et Te. Hsieh, Application of A1/PI composite bumps to COG bonding process, IEEE T COMP, 24(2), 2001, pp. 271-278
Search of optimum bias voltage for oxide patterning on Si using scanning tunneling microscopy in air
Authors:
Tseng, KS
Hsieh, TE
Lo, SC
Lin, HF
Citation: Ks. Tseng et al., Search of optimum bias voltage for oxide patterning on Si using scanning tunneling microscopy in air, J VAC SCI B, 18(2), 2000, pp. 639-643
Authors:
Tyan, HL
Wei, KH
Hsieh, TE
Citation: Hl. Tyan et al., Mechanical properties of clay-polyimide (BTDA-ODA) nanocomposites via ODA-modified organoclay, J POL SC PP, 38(22), 2000, pp. 2873-2878
Authors:
Chen, HW
Hsieh, TE
Liu, JR
Shieh, HPD
Citation: Hw. Chen et al., Initialization characteristics and their effects on the erasability of phase change optical disks using transmission electron microscopy, JPN J A P 1, 38(3B), 1999, pp. 1691-1697
Authors:
Jwo, SL
Whang, WT
Hsieh, TE
Pan, FM
Liaw, WC
Citation: Sl. Jwo et al., Effects of morphology and surface characteristics of poly(imide siloxane)sand deep UV/O-3 surface treatment on the interfacial adhesion of poly(imide siloxane)/alloy-42 leadframe joints, J POLYM R, 6(3), 1999, pp. 175-189
Authors:
Chen, PS
Hsieh, TE
Chu, CH
Citation: Ps. Chen et al., Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantation, THIN SOL FI, 353(1-2), 1999, pp. 274-282
Authors:
Chen, PS
Hsieh, TE
Hwang, YC
Chu, CH
Citation: Ps. Chen et al., Defects in Ge+-preamorphized silicon, J APPL PHYS, 86(10), 1999, pp. 5399-5406
Authors:
Chen, PS
Hsieh, TE
Chu, CH
Citation: Ps. Chen et al., Removal of end-of-range defects in Ge+-pre-amorphized Si by carbon ion implantation, J APPL PHYS, 85(6), 1999, pp. 3114-3119
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1-10
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