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Results: 1-25/57
Authors:
Lee, W
Shin, J
Yang, H
Hwang, H
Citation: W. Lee et al., Extracting the oxide capacitance using inductance-capacitance-resistance meter measurement on metal-oxide-semiconductor capacitors, JPN J A P 1, 40(9A), 2001, pp. 5308-5309
Authors:
Lee, TW
Seong, GY
Kim, YD
Hwang, H
Yoon, S
Yoon, E
Citation: Tw. Lee et al., Possibility of two-step As-desorption from (001) InP using surface photoabsorption, JPN J A P 2, 40(9AB), 2001, pp. L980-L982
Effects of N2O plasma surface treatment on the electrical and ohmic contact properties of n-type GaN
Authors:
Kim, H
Park, NM
Jang, JS
Park, SJ
Hwang, H
Citation: H. Kim et al., Effects of N2O plasma surface treatment on the electrical and ohmic contact properties of n-type GaN, EL SOLID ST, 4(11), 2001, pp. G104-G106
Authors:
Hwang, H
Lin, YS
Mai, CC
Citation: H. Hwang et al., On the optimal production and location of a labor-managed firm, ANN REG SCI, 35(2), 2001, pp. 217-226
Authors:
Jang, HS
Hwang, H
Jun, KP
Citation: Hs. Jang et al., Modeling and analysis of two-location algorithm with implicit registrationin CDMA personal communication network, COM IND ENG, 41(1), 2001, pp. 95-108
Authors:
Lockwood, DM
Hwang, H
Rossky, PJ
Citation: Dm. Lockwood et al., Electronic decoherence in condensed phases, CHEM PHYS, 268(1-3), 2001, pp. 285-293
Authors:
Hwang, H
Fisher, SW
Landrum, PF
Citation: H. Hwang et al., Identifying body residues of HCBP associated with 10-d mortality and partial life cycle effects in the midge, Chironomus riparius, AQUAT TOX, 52(3-4), 2001, pp. 251-267
Authors:
Kim, H
Kim, DJ
Park, SJ
Hwang, H
Citation: H. Kim et al., Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes, J APPL PHYS, 89(2), 2001, pp. 1506-1508
Authors:
Sun, JU
Hwang, H
Citation: Ju. Sun et H. Hwang, Scheduling problem in a two-machine flow line with the N-step prior-job-dependent set-up times, INT J SYST, 32(3), 2001, pp. 375-385
Authors:
Ko, CS
Kim, T
Hwang, H
Citation: Cs. Ko et al., External partner selection using tabu search heuristics in distributed manufacturing, INT J PROD, 39(17), 2001, pp. 3959-3974
Authors:
Kim, H
Park, SJ
Hwang, H
Citation: H. Kim et al., Effects of current spreading on the performance of GaN-based light-emitting diodes, IEEE DEVICE, 48(6), 2001, pp. 1065-1069
Authors:
Bodin, P
Smith, K
Horton, S
Hwang, H
Citation: P. Bodin et al., Microtremor observations of deep sediment resonance in metropolitan Memphis, Tennessee, ENG GEOL, 62(1-3), 2001, pp. 159-168
Authors:
Jeon, S
Choi, CJ
Seong, TY
Hwang, H
Citation: S. Jeon et al., Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2, APPL PHYS L, 79(2), 2001, pp. 245-247
Authors:
Lee, H
Jeon, S
Hwang, H
Citation: H. Lee et al., Electrical characteristics of a Dy-doped HfO2 gate dielectric, APPL PHYS L, 79(16), 2001, pp. 2615-2617
Authors:
Huh, C
Kim, SW
Kim, HS
Kim, HM
Hwang, H
Park, SJ
Citation: C. Huh et al., Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes, APPL PHYS L, 78(12), 2001, pp. 1766-1768
Authors:
Kwon, H
Yeo, I
Hwang, H
Citation: H. Kwon et al., Electrical characteristics of ultra-thin oxynitride gate dielectric prepared by reoxidation of thermal nitride in D2O, JPN J A P 2, 39(4A), 2000, pp. L273-L274
Authors:
Jung, H
Im, K
Yang, D
Hwang, H
Citation: H. Jung et al., Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5, IEEE ELEC D, 21(12), 2000, pp. 563-565
Authors:
Abe, K
Abe, K
Abe, T
Adam, I
Akagi, T
Akimoto, H
Allen, NJ
Ash, WW
Aston, D
Baird, KG
Baltay, C
Band, HR
Barakat, MB
Bardon, O
Barklow, TL
Bashindzhagyan, GL
Bauer, JM
Bellodi, G
Benvenuti, AC
Bilei, GM
Bisello, D
Blaylock, G
Bogart, JR
Bower, GR
Brau, JE
Breidenbach, M
Bugg, WM
Burke, D
Burnett, TH
Burrows, PN
Byrne, RM
Calcaterra, A
Calloway, D
Camanzi, B
Carpinelli, M
Cassell, R
Castaldi, R
Castro, A
Cavalli-Sforza, M
Chou, A
Church, E
Cohn, HO
Coller, JA
Convery, MR
Cook, V
Cowan, RF
Coyne, DG
Crawford, G
Damerell, CJS
Danielson, MN
Daoudi, M
de Groot, N
Dell'Orso, R
Dervan, PJ
de Sangro, R
Dima, M
Dong, DN
Doser, M
Dubois, R
Eisenstein, BI
Erofeeva, I
Eschenburg, V
Etzion, E
Fahey, S
Falciai, D
Fan, C
Fernandez, JP
Fero, MJ
Flood, K
Frey, R
Gifford, J
Gillman, T
Gladding, G
Gonzalez, S
Goodman, ER
Hart, EL
Harton, JL
Hasuko, K
Hedges, SJ
Hertzbach, SS
Hildreth, MD
Huber, J
Huffer, ME
Hughes, EW
Huynh, X
Hwang, H
Iwasaki, M
Jackson, DJ
Jacques, P
Jaros, JA
Jiang, ZY
Johnson, AS
Johnson, JR
Johnson, RA
Junk, T
Kajikawa, R
Kalelkar, M
Kamyshkov, Y
Kang, HJ
Karliner, I
Kawahara, H
Kim, YD
King, ME
King, R
Kofler, RR
Krishna, NM
Kroeger, RS
Langston, M
Lath, A
Leith, DWG
Lia, V
Lin, C
Liu, MX
Liu, X
Loreti, M
Lu, A
Lynch, HL
Ma, J
Mahjouri, M
Mancinelli, G
Manly, S
Mantovani, G
Markiewicz, TW
Maruyama, T
Masuda, H
Mazzucato, E
McKemey, AK
Meadows, BT
Menegatti, C
Messner, R
Mockett, PM
Moffeit, KC
Moore, TB
Morii, M
Muller, D
Murzin, V
Nagamine, T
Narita, S
Nauenberg, U
Neal, H
Nussbaum, M
Oishi, N
Onoprienko, D
Osborne, LS
Panvini, RS
Park, CH
Pavel, TJ
Peruzzi, I
Piccolo, M
Piemontese, L
Pitts, KT
Plano, RJ
Prepost, R
Prescott, CY
Punkar, GD
Quigley, J
Ratcliff, BN
Reeves, TW
Reidy, J
Reinertsen, PL
Rensing, PE
Rochester, LS
Rowson, PC
Russell, JJ
Saxton, OH
Schalk, T
Schindler, RH
Schumm, BA
Schwiening, J
Sen, S
Serbo, VV
Shaevitz, MH
Shank, JT
Shapiro, G
Sherden, DJ
Shmakov, KD
Simopoulos, C
Sinev, NB
Smith, SR
Smy, MB
Snyder, JA
Staengle, H
Stahl, A
Stamer, P
Steiner, H
Steiner, R
Strauss, MG
Su, D
Suekane, F
Sugiyama, A
Suzuki, S
Swartz, M
Szumilo, A
Takahashi, T
Taylor, FE
Thom, J
Torrence, E
Toumbas, NK
Usher, T
Vannini, C
Va'vra, J
Vella, E
Venuti, JP
Verdier, R
Verdini, PG
Wagner, DL
Wagner, SR
Waite, AP
Walston, S
Watts, SJ
Weidemann, AW
Weiss, ER
Whitaker, JS
White, SL
Wickens, FJ
Williams, B
Williams, DC
Williams, SH
Willocq, S
Wilson, RJ
Wisniewski, WJ
Wittlin, JL
Woods, M
Word, GB
Wright, TR
Wyss, J
Yamamoto, RK
Yamartino, JM
Yang, X
Yashima, J
Yellin, SJ
Young, CC
Yuta, H
Zapalac, G
Zdarko, RW
Zhou, J
Citation: K. Abe et al., Search for charmless hadronic decays of B mesons with the SLAC SLD detector - art. no. 071101, PHYS REV D, 6207(7), 2000, pp. 1101
Authors:
Jeon, S
Jang, H
Kim, H
Noh, D
Hwang, H
Citation: S. Jeon et al., Electrical characteristics of AlOxNy prepared by oxidation of sub-10-nm-thick AlN films for MOS gate dielectric applications, J KOR PHYS, 37(6), 2000, pp. 886-888
Authors:
Baek, SK
Choi, CJ
Seong, TY
Hwang, H
Moon, DW
Kim, HK
Citation: Sk. Baek et al., Ultrashallow P+/N junction formation by plasma ion implantation, J KOR PHYS, 37(6), 2000, pp. 912-914
Authors:
Yoon, S
Moon, Y
Lee, TW
Hwang, H
Yoon, E
Kim, YD
Lee, UH
Lee, D
Kim, HS
Lee, JY
Citation: S. Yoon et al., Effects of growth interruption on the evolution of InAs/InP self-assembledquantum dots, J ELEC MAT, 29(5), 2000, pp. 535-541
Authors:
Choung, J
Hwang, H
Choi, J
Rim, M
Citation: J. Choung et al., Transition of latecomer firms from technology users to technology generators: Korean semiconductor firms, WORLD DEV, 28(5), 2000, pp. 969-982
Authors:
Hwang, H
Wang, L
Yuan, Z
Citation: H. Hwang et al., Comparison of liquefaction potential of loess in Lanzhou, China, and Memphis, USA, SOIL DYN EA, 20(5-8), 2000, pp. 389-395
Authors:
Kim, YD
Lee, MS
Lee, TW
Hwang, H
Yoon, S
Moon, Y
Yoon, E
Citation: Yd. Kim et al., In situ analysis of surface photoabsorption spectra during InP ALE in metal organic chemical vapor deposition, MICROEL ENG, 51-2, 2000, pp. 43-50
Authors:
Lee, W
Hwang, H
Citation: W. Lee et H. Hwang, Hot carrier reliability characteristics of a bend-gate MOSFET, SOL ST ELEC, 44(6), 2000, pp. 1117-1119