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Results: 1-12 |
Results: 12
Breakdown characteristics of ultrathin gate oxides (< 4 nm) in metal-oxide-semiconductor structure subjected to substrate injection
Authors: Huang, CH Hwu, JG
Citation: Ch. Huang et Jg. Hwu, Breakdown characteristics of ultrathin gate oxides (< 4 nm) in metal-oxide-semiconductor structure subjected to substrate injection, J VAC SCI B, 19(5), 2001, pp. 1894-1897
Improvement in oxide thickness uniformity by repeated spike oxidation
Authors: Hong, CC Lee, CY Hsieh, YL Liu, CC Fong, IK Hwu, JG
Citation: Cc. Hong et al., Improvement in oxide thickness uniformity by repeated spike oxidation, IEEE SEMIC, 14(3), 2001, pp. 227-230
An on-chip temperature sensor by utilizing a MOS tunneling diode
Authors: Shih, YH Hwu, JG
Citation: Yh. Shih et Jg. Hwu, An on-chip temperature sensor by utilizing a MOS tunneling diode, IEEE ELEC D, 22(6), 2001, pp. 299-301
Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal
Authors: Chen, YC Lee, CY Hwu, JG
Citation: Yc. Chen et al., Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal, SOL ST ELEC, 45(9), 2001, pp. 1531-1536
Stress effect on the kinetics of silicon thermal oxidation
Authors: Yen, JY Hwu, JG
Citation: Jy. Yen et Jg. Hwu, Stress effect on the kinetics of silicon thermal oxidation, J APPL PHYS, 89(5), 2001, pp. 3027-3032
Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (similar to 2 nm) after high-field stress
Authors: Huang, CH Hwu, JG
Citation: Ch. Huang et Jg. Hwu, Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (similar to 2 nm) after high-field stress, J APPL PHYS, 89(10), 2001, pp. 5497-5501
Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress
Authors: Hong, CC Hwu, JG
Citation: Cc. Hong et Jg. Hwu, Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress, APPL PHYS L, 79(23), 2001, pp. 3797-3799
Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing
Authors: Huang, CH Hwu, JG
Citation: Ch. Huang et Jg. Hwu, Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing, SOL ST ELEC, 44(8), 2000, pp. 1405-1410
Enhancement of silicon oxidation rate due to tensile mechanical stress
Authors: Yen, JY Hwu, JG
Citation: Jy. Yen et Jg. Hwu, Enhancement of silicon oxidation rate due to tensile mechanical stress, APPL PHYS L, 76(14), 2000, pp. 1834-1835
The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides
Authors: Lee, KC Chang, HY Chang, H Hwu, JG Wung, TS
Citation: Kc. Lee et al., The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides, IEEE SEMIC, 12(3), 1999, pp. 340-344
Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA)
Authors: Shih, YH Hwu, JG
Citation: Yh. Shih et Jg. Hwu, Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA), IEEE ELEC D, 20(11), 1999, pp. 545-547
Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation
Authors: Yeh, KL Jeng, MJ Hwu, JG
Citation: Kl. Yeh et al., Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation, SOL ST ELEC, 43(3), 1999, pp. 671-676
Risultati: 1-12 |