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Results: 1-8 |
Results: 8

Authors: TODA T UEDA Y IBARAKI A
Citation: T. Toda et al., FABRICATION PROCEDURES AND CHARACTERISTICS OF 6H-SIC AU-GATE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FOR USE AT HIGH-TEMPERATURES, JPN J A P 1, 37(4A), 1998, pp. 1817-1818

Authors: UDA H NISHIKAWA M MURAI S SAWAI T IBARAKI A
Citation: H. Uda et al., IMPROVED CLUSTER MATCHING AND DESIGN TECHNIQUES CONSIDERING EVEN-AND ODD-MODE OSCILLATIONS FOR POWER-AMPLIFIERS, Microwave and optical technology letters, 17(2), 1998, pp. 73-76

Authors: SAHOTA TS MANVILLE JF PEET FG IBARAKI A WHITE E
Citation: Ts. Sahota et al., WEEVIL PHYSIOLOGY CONTROLS THE FEEDING RATES OF PISSODES STROBI ON PICEA-SITCHENSIS, Canadian Entomologist, 130(3), 1998, pp. 305-314

Authors: SAHOTA TS LEAL I WHITE E MANVILLE JF IBARAKI A HOLLMANN J
Citation: Ts. Sahota et al., ACETONE AFFECTS FLIGHT BEHAVIOR AND EXPRESSION OF THE VITELLOGENIN GENE OF PISSODES STROBI, Canadian Entomologist, 130(3), 1998, pp. 383-384

Authors: MATSUSHITA S INOUE D MATSUMURA K SAWAI T TANIGUCHI K IBARAKI A
Citation: S. Matsushita et al., QUANTIFICATION OF ELECTRICAL DEACTIVATION BY TRIPLY NEGATIVE CHARGED GA VACANCIES IN HIGHLY DOPED THIN GAAS-LAYERS, JPN J A P 1, 36(3B), 1997, pp. 1698-1702

Authors: HIROYAMA R UETANI T BESSHO Y SHONO M SAWADA M IBARAKI A
Citation: R. Hiroyama et al., HIGH-POWER 630 NM BAND LASER-DIODES WITH STRAIN-COMPENSATED SINGLE-QUANTUM-WELL ACTIVE LAYER, Electronics Letters, 33(12), 1997, pp. 1084-1086

Authors: OZAWA Y IKUNO T AMANO S IDA T IBARAKI A KIMURA K TORIUMI K
Citation: Y. Ozawa et al., ELECTROCRYSTALLIZATION, CRYSTAL-STRUCTURE, AND SOLID-STATE PROPERTIESOF HALOGEN-BRIDGED ONE-DIMENSIONAL COMPOUND, ([NI(EN)(2)BR](CLO4)(2))(INFINITY) HAVING AN ELONGATED NI-CENTER-DOT-CENTER-DOT-CENTER-DOT-NI DISTANCE, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 278, 1996, pp. 189-197

Authors: BESSHO Y UETANI T HIROYAMA R KOMEDA K SHONO M IBARAKI A YODOSHI K NIINA T
Citation: Y. Bessho et al., SELF-PULSATING 630NM BAND STRAIN-COMPENSATED MQW ALGAINP LASER-DIODES, Electronics Letters, 32(7), 1996, pp. 667-668
Risultati: 1-8 |