Authors: IBRAGIMOVA MI BARYSHEV NS PETUKHOV VY KHAIBULLIN IB

Citation: Mi. Ibragimova et al., EFFECT OF SUCCESSIVE IMPLANTATION OF AG-XTE CRYSTALS((CU+) AND XE+ IONS ON THE RECOMBINATION PROPERTIES OF CDXHG1), Semiconductors, 31(7), 1997, pp. 666-668

Authors: IBRAGIMOVA MI BARYSHEV NS PETUKHOV VY KHAIBULLIN IB

Citation: Mi. Ibragimova et al., PECULIARITIES OF CARRIER RECOMBINATION IN CDXHG1-XTE IMPLANTED CONSECUTIVELY WITH AG+ (CU+) AND XE+ IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 471-474

Authors: IBRAGIMOVA MI BARYSHEV NS ZHIKHAREV VA KHAIBULLIN IB

Citation: Mi. Ibragimova et al., RECOMBINATION PROPERTIES OF IMPLANTED GROUP-I, GROUP-III, AND GROUP-VIII IONS AND THERMALLY ANNEALED CDXHG1-XTE CRYSTALS, Semiconductors, 29(10), 1995, pp. 917-920

Authors: IBRAGIMOVA MI FAIZRAKHMANOV IA KHAIBULLIN IB SAINOV NA

Citation: Mi. Ibragimova et al., TRANSFORMATION OF THE CRYSTAL-STRUCTURE OF CDXHG1-XTE DUE TO ION-IMPLANTATION, Semiconductors, 27(8), 1993, pp. 706-709

Authors: IBRAGIMOVA MI PETUKHOV VY KHAIBULLIN IB

Citation: Mi. Ibragimova et al., RADIATION SWELLING AND SPUTTERING OF CDXHG1-XTE AS A RESULT OF LARGE-DOSE ION-IMPLANTATION, Semiconductors, 27(4), 1993, pp. 311-314