Authors:
VISPUTE RD
TALYANSKY V
SHARMA RP
CHOOPUN S
DOWNES M
VENKATESAN T
LI YX
SALAMANCARIBA LG
ILIADIS AA
JONES KA
MCGARRITY J
Citation: Rd. Vispute et al., ADVANCES IN PULSED-LASER DEPOSITION OF NITRIDES AND THEIR INTEGRATIONWITH OXIDES, Applied surface science, 129, 1998, pp. 431-439
Authors:
TALYANSKY V
VISPUTE RD
RAMESH R
SHARMA RP
VENKATESAN T
LI YX
SALAMANCARIBA LG
WOOD MC
LAREAU RT
JONES KA
ILIADIS AA
Citation: V. Talyansky et al., FABRICATION AND CHARACTERIZATION OF EPITAXIAL ALN TIN BILAYERS ON SAPPHIRE/, Thin solid films, 323(1-2), 1998, pp. 37-41
Authors:
VISPUTE RD
TALYANSKY V
CHOOPUN S
SHARMA RP
VENKATESAN T
HE M
TANG X
HALPERN JB
SPENCER MG
LI YX
SALAMANCARIBA LG
ILIADIS AA
JONES KA
Citation: Rd. Vispute et al., HETEROEPITAXY OF ZNO ON GAN AND ITS IMPLICATIONS FOR FABRICATION OF HYBRID OPTOELECTRONIC DEVICES, Applied physics letters, 73(3), 1998, pp. 348-350
Authors:
VISPUTE RD
TALYANSKY V
TRAJANOVIC Z
CHOOPUN S
DOWNES M
SHARMA RP
VENKATESAN T
WOODS MC
LAREAU RT
JONES KA
ILIADIS AA
Citation: Rd. Vispute et al., HIGH-QUALITY CRYSTALLINE ZNO BUFFER LAYERS ON SAPPHIRE(001) BY PULSED-LASER DEPOSITION FOR III-V NITRIDES, Applied physics letters, 70(20), 1997, pp. 2735-2737
Citation: Sa. Tabatabaei et al., DIFFERENTIAL PHOTO-VOLTAGE SPECTROSCOPY FOR CHARACTERIZING EPITAXIAL MULTILAYERED AND QUANTUM-WELL STRUCTURES, Journal of electronic materials, 24(2), 1995, pp. 87-92
Authors:
ZAHURAK JK
ILIADIS AA
RISHTON SA
MASSELINK WT
Citation: Jk. Zahurak et al., TRANSISTOR PERFORMANCE AND ELECTRON-TRANSPORT PROPERTIES OF HIGH-PERFORMANCE INAS QUANTUM-WELL FETS, IEEE electron device letters, 15(12), 1994, pp. 489-492
Authors:
ZAHURAK JK
ILIADIS AA
RISHTON SA
MASSELINK WT
Citation: Jk. Zahurak et al., ELECTRON-TRANSPORT IN INGAAS ALINAS HETEROSTRUCTURES AND ITS IMPACT ON TRANSISTOR PERFORMANCE/, Journal of applied physics, 76(11), 1994, pp. 7642-7644