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Results: 1-8 |
Results: 8

Authors: VISPUTE RD TALYANSKY V SHARMA RP CHOOPUN S DOWNES M VENKATESAN T LI YX SALAMANCARIBA LG ILIADIS AA JONES KA MCGARRITY J
Citation: Rd. Vispute et al., ADVANCES IN PULSED-LASER DEPOSITION OF NITRIDES AND THEIR INTEGRATIONWITH OXIDES, Applied surface science, 129, 1998, pp. 431-439

Authors: TALYANSKY V VISPUTE RD RAMESH R SHARMA RP VENKATESAN T LI YX SALAMANCARIBA LG WOOD MC LAREAU RT JONES KA ILIADIS AA
Citation: V. Talyansky et al., FABRICATION AND CHARACTERIZATION OF EPITAXIAL ALN TIN BILAYERS ON SAPPHIRE/, Thin solid films, 323(1-2), 1998, pp. 37-41

Authors: VISPUTE RD TALYANSKY V CHOOPUN S SHARMA RP VENKATESAN T HE M TANG X HALPERN JB SPENCER MG LI YX SALAMANCARIBA LG ILIADIS AA JONES KA
Citation: Rd. Vispute et al., HETEROEPITAXY OF ZNO ON GAN AND ITS IMPLICATIONS FOR FABRICATION OF HYBRID OPTOELECTRONIC DEVICES, Applied physics letters, 73(3), 1998, pp. 348-350

Authors: VISPUTE RD TALYANSKY V SHARMA RP CHOOPUN S DOWNES M VENKATESAN T JONES KA ILIADIS AA KHAN MA YANG JW
Citation: Rd. Vispute et al., GROWTH OF EPITAXIAL GAN FILMS BY PULSED-LASER DEPOSITION, Applied physics letters, 71(1), 1997, pp. 102-104

Authors: VISPUTE RD TALYANSKY V TRAJANOVIC Z CHOOPUN S DOWNES M SHARMA RP VENKATESAN T WOODS MC LAREAU RT JONES KA ILIADIS AA
Citation: Rd. Vispute et al., HIGH-QUALITY CRYSTALLINE ZNO BUFFER LAYERS ON SAPPHIRE(001) BY PULSED-LASER DEPOSITION FOR III-V NITRIDES, Applied physics letters, 70(20), 1997, pp. 2735-2737

Authors: TABATABAEI SA ILIADIS AA WOOD CEC
Citation: Sa. Tabatabaei et al., DIFFERENTIAL PHOTO-VOLTAGE SPECTROSCOPY FOR CHARACTERIZING EPITAXIAL MULTILAYERED AND QUANTUM-WELL STRUCTURES, Journal of electronic materials, 24(2), 1995, pp. 87-92

Authors: ZAHURAK JK ILIADIS AA RISHTON SA MASSELINK WT
Citation: Jk. Zahurak et al., TRANSISTOR PERFORMANCE AND ELECTRON-TRANSPORT PROPERTIES OF HIGH-PERFORMANCE INAS QUANTUM-WELL FETS, IEEE electron device letters, 15(12), 1994, pp. 489-492

Authors: ZAHURAK JK ILIADIS AA RISHTON SA MASSELINK WT
Citation: Jk. Zahurak et al., ELECTRON-TRANSPORT IN INGAAS ALINAS HETEROSTRUCTURES AND ITS IMPACT ON TRANSISTOR PERFORMANCE/, Journal of applied physics, 76(11), 1994, pp. 7642-7644
Risultati: 1-8 |