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Results: 1-9 |
Results: 9

Authors: KLEINSORGE B ILIE A CHHOWALLA M FUKAREK W MILNE WI ROBERTSON J
Citation: B. Kleinsorge et al., ELECTRICAL AND OPTICAL-PROPERTIES OF BORONATED TETRAHEDRALLY BONDED AMORPHOUS-CARBON (TA-C-B), DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 472-476

Authors: ILIE A EQUER B
Citation: A. Ilie et B. Equer, FIELD-ENHANCED GENERATION IN HYDROGENATED AMORPHOUS-SILICON, Physical review. B, Condensed matter, 57(24), 1998, pp. 15349-15359

Authors: ILIE A CONWAY NMJ KLEINSORGE B ROBERTSON J MILNE WI
Citation: A. Ilie et al., PHOTOCONDUCTIVITY AND ELECTRONIC TRANSPORT IN TETRAHEDRAL AMORPHOUS-CARBON AND HYDROGENATED TETRAHEDRAL AMORPHOUS-CARBON, Journal of applied physics, 84(10), 1998, pp. 5575-5582

Authors: CONWAY NMJ ILIE A ROBERTSON J MILNE WI TAGLIAFERRO A
Citation: Nmj. Conway et al., REDUCTION IN DEFECT DENSITY BY ANNEALING IN HYDROGENATED TETRAHEDRAL AMORPHOUS-CARBON, Applied physics letters, 73(17), 1998, pp. 2456-2458

Authors: ILIE A EQUER B POCHET T
Citation: A. Ilie et al., LEAKAGE CURRENT STUDIES OF THICK A-SI-H DETECTORS UNDER HIGH-ELECTRIC-FIELD CONDITIONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 18-22

Authors: POCHET T ILIE A BRAMBILLA A EQUER B
Citation: T. Pochet et al., SENSITIVITY MEASUREMENTS OF THICK AMORPHOUS-SILICON P-I-N NUCLEAR-DETECTORS, IEEE transactions on nuclear science, 43(3), 1996, pp. 1452-1457

Authors: TOKUNAGA Y NISHITAI R ISHIKAWA Y ILIE A KAGANOI J KANAJI K NAKAYAMA N MATUMURA S OHSUMI K
Citation: Y. Tokunaga et al., ABDOMINAL ABNORMALITIES DETECTED BY ULTRASONOGRAPHY IN SCREENING OF MEDICAL CHECK-UP, Gastroenterology, 110(4), 1996, pp. 44-44

Authors: EQUER B ILIE A
Citation: B. Equer et A. Ilie, HIGH-ELECTRIC-FIELD FORMING OF A-SI-H P-I-N-DIODES, Journal of non-crystalline solids, 190(1-2), 1995, pp. 67-73

Authors: POCHET T ILIE A FOULON F EQUER B
Citation: T. Pochet et al., CHARACTERIZATION OF A NEW A-SI H DETECTORS FABRICATED FROM AMORPHOUS-SILICON DEPOSITED AT HIGH-RATE BY HELIUM ENHANCED PECVD, IEEE transactions on nuclear science, 41(4), 1994, pp. 1014-1018
Risultati: 1-9 |