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Results: 1-8 |
Results: 8

Authors: WATANABE D INOKAWA H HASHIMOTO K SUZUKI N KANO M SHIGEMOTO R HIRANO T TOYAMA K KANEKO S YOKOI M MORIYOSHI K SUZUKI M KOBAYASHI K NAGATSU T KREITMAN RJ PASTAN I NAKANISHI S
Citation: D. Watanabe et al., ABLATION OF CEREBELLAR GOLGI CELLS DISRUPTS SYNAPTIC INTEGRATION INVOLVING GABA INHIBITION AND NMDA RECEPTOR ACTIVATION IN MOTOR COORDINATION, Cell (Cambridge), 95(1), 1998, pp. 17-27

Authors: AKASE E INOKAWA H TOYAMA K
Citation: E. Akase et al., NEURONAL RESPONSIVENESS TO 3-DIMENSIONAL MOTION IN CAT POSTEROMEDIAL LATERAL SUPRASYLVIAN CORTEX, Experimental Brain Research, 122(2), 1998, pp. 214-226

Authors: DOUSEKI T SHIGEMATSU S YAMADA J HARADA M INOKAWA H TSUCHIYA T
Citation: T. Douseki et al., A 0.5-V MTCMOS SIMOX LOGIC GATE, IEEE journal of solid-state circuits, 32(10), 1997, pp. 1604-1609

Authors: YASUDA S OHTOMO Y INO M KADO Y INOKAWA H TSUCHIYA T
Citation: S. Yasuda et al., A 4 1 MUX CIRCUIT USING 1/4 MICRON CMOS/SIMOX FOR HIGH-SPEED AND LOW-POWER APPLICATIONS/, JPN J A P 1, 35(2B), 1996, pp. 902-905

Authors: KUROTANI T HIGASHI S INOKAWA H TOYAMA K
Citation: T. Kurotani et al., PROTEIN AND RNA SYNTHESIS-DEPENDENT AND SYNTHESIS-INDEPENDENT LTPS INDEVELOPING RAT VISUAL-CORTEX, NeuroReport, 8(1), 1996, pp. 35-39

Authors: AWAYA N INOKAWA H YAMAMOTO E OKAZAKI Y MIYAKE M ARITA Y KOBAYASHI T
Citation: N. Awaya et al., EVALUATION OF A COPPER METALLIZATION PROCESS AND THE ELECTRICAL CHARACTERISTICS OF COPPER-INTERCONNECTED QUARTER-MICRON CMOS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1206-1212

Authors: KOBAYASHI T NAKAYAMA S MIYAKE M OKAZAKI Y INOKAWA H
Citation: T. Kobayashi et al., NITROGEN IN-SITU DOPED POLY BUFFER LOGOS - SIMPLE AND SCALABLE ISOLATION TECHNOLOGY FOR DEEP-SUBMICRON SILICON DEVICES, I.E.E.E. transactions on electron devices, 43(2), 1996, pp. 311-317

Authors: OKAZAKI Y KOBAYASHI T INOKAWA H NAKAYAMA S MIYAKE M MORIMOTO T YAMAMOTO Y
Citation: Y. Okazaki et al., SUB-1 4-MU-M DUAL-GATE CMOS TECHNOLOGY USING IN-SITU DOPED POLYSILICON FOR NMOS AND PMOS GATES/, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1583-1590
Risultati: 1-8 |