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Results: 1-12 |
Results: 12
ON THE PROPERTIES OF IMPURITY BANDS GENERATED IN P-TYPE HOMOEPITAXIALDIAMOND
Authors: INUSHIMA T OGASAWARA A SHIRAISHI T OHYA S KARASAWA S SHIOMI H
Citation: T. Inushima et al., ON THE PROPERTIES OF IMPURITY BANDS GENERATED IN P-TYPE HOMOEPITAXIALDIAMOND, DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 874-878
PHASE STRATIFICATION OF SBSBR IN FERROELECTRIC PHASE
Authors: INUSHIMA T
Citation: T. Inushima, PHASE STRATIFICATION OF SBSBR IN FERROELECTRIC PHASE, Journal of the Korean Physical Society, 32, 1998, pp. 70-72
A NOVEL LOW-TEMPERATURE PLASMA GENERATOR WITH ALUMINA-COATED ELECTRODE FOR OPEN-AIR MATERIAL PROCESSING
Authors: KOIDE M HORIUCHI T INUSHIMA T LEE BJ TOBAYAMA M KOINUMA H
Citation: M. Koide et al., A NOVEL LOW-TEMPERATURE PLASMA GENERATOR WITH ALUMINA-COATED ELECTRODE FOR OPEN-AIR MATERIAL PROCESSING, Thin solid films, 316(1-2), 1998, pp. 65-67
CRYSTAL-GROWTH OF GAN AT RESONANCE POINT OF NITROGEN-ECR PLASMA
Authors: INUSHIMA T ODA T ASHINO T MATSUSHITA T SHIRAISHI T YASAKA S OHOYA S
Citation: T. Inushima et al., CRYSTAL-GROWTH OF GAN AT RESONANCE POINT OF NITROGEN-ECR PLASMA, Journal of crystal growth, 190, 1998, pp. 354-358
LATTICE STABILITY STUDY OF NITRIDE SEMICONDUCTORS BY THE USE OF MOLECULAR-DYNAMICS CALCULATION
Authors: MATSUMURA S INUSHIMA T SHIRAISHI T
Citation: S. Matsumura et al., LATTICE STABILITY STUDY OF NITRIDE SEMICONDUCTORS BY THE USE OF MOLECULAR-DYNAMICS CALCULATION, Journal of crystal growth, 190, 1998, pp. 696-700
OPTICAL AND ELECTRICAL INVESTIGATION OF BORON-DOPED HOMOEPITAXIAL DIAMOND
Authors: OGASAWARA A INUSHIMA T SHIRAISHI T OHYA S KARASAWA S SHIOMI H
Citation: A. Ogasawara et al., OPTICAL AND ELECTRICAL INVESTIGATION OF BORON-DOPED HOMOEPITAXIAL DIAMOND, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 835-838
CAPACITANCE-VOLTAGE MEASUREMENTS ON METAL-SIO2-BORON-DOPED HOMOEPITAXIAL DIAMOND
Authors: INUSHIMA T NAKAMA T SHIRAISHI T MITSUHASHI M WATANABE T
Citation: T. Inushima et al., CAPACITANCE-VOLTAGE MEASUREMENTS ON METAL-SIO2-BORON-DOPED HOMOEPITAXIAL DIAMOND, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 852-855
STRUCTURE AND ELECTRIC PROPERTIES OF TIO2 FILMS PREPARED BY COLD-PLASMA TORCH UNDER ATMOSPHERIC-PRESSURE
Authors: HA H MOON BK HORIUCHI T INUSHIMA T ISHIWARA H KOINUMA H
Citation: H. Ha et al., STRUCTURE AND ELECTRIC PROPERTIES OF TIO2 FILMS PREPARED BY COLD-PLASMA TORCH UNDER ATMOSPHERIC-PRESSURE, Materials science & engineering. B, Solid-state materials for advanced technology, 41(1), 1996, pp. 143-147
SOFT MODE OBSERVATION IN PARAELECTRIC SBSBR
Authors: INUSHIMA T
Citation: T. Inushima, SOFT MODE OBSERVATION IN PARAELECTRIC SBSBR, Physica. B, Condensed matter, 220, 1996, pp. 614-616
PHASE-TRANSFORMATION IN AMORPHOUS-SILICON UNDER EXCIMER-LASER ANNEALING STUDIES BY RAMAN-SPECTROSCOPY AND MOBILITY MEASUREMENTS
Authors: INUSHIMA T KUSUMOTO N KUBO N ZHANG HY YAMAZAKI S
Citation: T. Inushima et al., PHASE-TRANSFORMATION IN AMORPHOUS-SILICON UNDER EXCIMER-LASER ANNEALING STUDIES BY RAMAN-SPECTROSCOPY AND MOBILITY MEASUREMENTS, Journal of applied physics, 79(12), 1996, pp. 9064-9073
CHARACTERISTICS OF POLYCRYSTALLINE-SI THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER ANNEALING METHOD
Authors: KUBO N KUSUMOTO N INUSHIMA T YAMAZAKI S
Citation: N. Kubo et al., CHARACTERISTICS OF POLYCRYSTALLINE-SI THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER ANNEALING METHOD, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1876-1879
ENHANCEMENT OF PHOTOSENSITIVITY BY ULTRAVIOLET-IRRADIATION AND PHOTOCONDUCTIVITY SPECTRA OF DIAMOND THIN-FILMS
Authors: VAITKUS R INUSHIMA T YAMAZAKI S
Citation: R. Vaitkus et al., ENHANCEMENT OF PHOTOSENSITIVITY BY ULTRAVIOLET-IRRADIATION AND PHOTOCONDUCTIVITY SPECTRA OF DIAMOND THIN-FILMS, Applied physics letters, 62(19), 1993, pp. 2384-2386
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