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Results: 26-39/39
Authors:
NONAKA T
MORI Y
NAGAI N
NAKAGAWA Y
SAEDA M
TAKAHAGI T
ISHITANI A
Citation: T. Nonaka et al., ORGANIC SUPERLATTICE FILM BY ALTERNATE DEPOSITION OF SINGLE MOLECULARLAYERS, Thin solid films, 239(2), 1994, pp. 214-219
Authors:
NONAKA T
DATE T
TOMITA S
NAGAI N
NISHIMURA M
MURATA Y
ISHITANI A
Citation: T. Nonaka et al., PHTHALOCYANINES ULTRATHIN ALTERNATING LAYER FILM ON SILICON, PREPAREDBY MOLECULAR-BEAM DEPOSITION, Thin solid films, 237(1-2), 1994, pp. 87-90
Authors:
KITANO Y
ISHITANI A
INOUE T
ASHIDA T
Citation: Y. Kitano et al., MODEL COMPOUNDS FOR HIGH-MODULUS AROMATIC POLYETHER-ESTERS - X-RAY STRUCTURES AND ENERGY CALCULATIONS OF DIMETHYL 1,2-BIS(PHENOXY)ETHANE-4,4'-DICARBOXYLATE AND ITS CHLORINATED DERIVATIVES, Polymer, 35(24), 1994, pp. 5179-5184
Authors:
FUJII T
ISHITANI A
GERAGHTY DE
Citation: T. Fujii et al., A SOLUBLE FORM OF THE HLA-G ANTIGEN IS ENCODED BY A MESSENGER-RIBONUCLEIC-ACID CONTAINING INTRON 4, The Journal of immunology, 153(12), 1994, pp. 5516-5524
Authors:
TAKAHAGI T
ISHITANI A
WAKAO S
Citation: T. Takahagi et al., CHEMICAL-STRUCTURE AND REACTIVITY OF A SILICON SINGLE-CRYSTAL SURFACEFLUORINATED BY XENON FLUORIDE, Journal of applied physics, 76(5), 1994, pp. 3140-3143
Authors:
NAGANO S
TSUKIJI M
ANDO K
HASEGAWA E
ISHITANI A
Citation: S. Nagano et al., MECHANISM OF LEAKAGE CURRENT THROUGH THE NANOSCALE SIO2 LAYER, Journal of applied physics, 75(7), 1994, pp. 3530-3535
Authors:
YAMAGUCHI H
LESAICHERRE PY
SAKUMA T
MIYASAKA Y
ISHITANI A
YOSHIDA M
Citation: H. Yamaguchi et al., STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF SRTIO3 THIN-FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 32(9B), 1993, pp. 4069-4073
Authors:
NAKAMURA M
TAKAHAGI T
ISHITANI A
Citation: M. Nakamura et al., FLUORINE TERMINATION OF SILICON SURFACE BY F2 AND SUCCEEDING REACTIONWITH WATER, JPN J A P 1, 32(6B), 1993, pp. 3125-3130
Authors:
SHIRAMIZU Y
MORITA M
ISHITANI A
Citation: Y. Shiramizu et al., COPPER ADSORPTION BEHAVIOR ON SILICON SUBSTRATES, IEICE transactions on electronics, E76C(4), 1993, pp. 635-640
Authors:
ISHITANI A
LESAICHERRE PY
KAMIYAMA S
ANDO K
WATANABE H
Citation: A. Ishitani et al., TRENDS IN CAPACITOR DIELECTRICS FOR DRAMS, IEICE transactions on electronics, E76C(11), 1993, pp. 1564-1581
Authors:
SASANUMA Y
ABE A
SASANUMA T
KITANO Y
ISHITANI A
Citation: Y. Sasanuma et al., SMALL-ANGLE X-RAY-SCATTERING OF DISTORTED LAMELLAR STRUCTURES, Journal of polymer science. Part B, Polymer physics, 31(9), 1993, pp. 1179-1186
Authors:
YOKOZAWA A
OHTA N
MOCHIZUKI Y
ISHITANI A
TAKADA T
Citation: A. Yokozawa et al., THEORETICAL-STUDIES ON THE DIELECTRIC-BREAKDOWN OF THE SIO2 THIN-FILMS, Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy, 39(1), 1993, pp. 81-84
Authors:
KAMIYAMA S
LESAICHERRE PY
SUZUKI H
SAKAI A
NISHIYAMA I
ISHITANI A
Citation: S. Kamiyama et al., ULTRATHIN TANTALUM OXIDE CAPACITOR DIELECTRIC LAYERS FABRICATED USINGRAPID THERMAL NITRIDATION PRIOR TO LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 140(6), 1993, pp. 1617-1625
Authors:
YOSHIKAWA M
MORI Y
MAEGAWA M
KATAGIRI G
ISHIDA H
ISHITANI A
Citation: M. Yoshikawa et al., RAMAN-SCATTERING FROM DIAMOND PARTICLES, Applied physics letters, 62(24), 1993, pp. 3114-3116